Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Spyros Gallis"'
Publikováno v:
Advanced Photonics Research, Vol 2, Iss 12, Pp n/a-n/a (2021)
Anisotropic layered GaTe has emerged as a potential material for polarization‐sensitive applications. The optical anisotropy in monoclinic GaTe is triggered by its in‐plane structural anisotropy, as each layer comprises periodic chain‐like stru
Externí odkaz:
https://doaj.org/article/8bf424a0d7364afe89e212524910c1e7
Autor:
Devika Vipin, Nikhil Modi, Tyler Reynolds, Bin Zhang, Natasha Tabassum, Gourav Bhowmik, Vasileios Nikas, Subha Chakraborty, Spyros Gallis, Mengbing Huang
Publikováno v:
AIP Advances, Vol 9, Iss 6, Pp 065018-065018-7 (2019)
While hydrogen passivation has led to enhanced luminescence in many erbium doped materials, its effects on Er oxides/silicates compounds has rarely been demonstrated. Here we report effects of forming gas annealing on the luminescence properties in s
Externí odkaz:
https://doaj.org/article/4917b9bc3eee4f49979fbc0cde2f434d
Publikováno v:
Nanomaterials, Vol 9, Iss 11, p 1510 (2019)
Emerging two-dimensional gallium chalcogenides, such as gallium telluride (GaTe), are considered promising layered semiconductors that can serve as vital building blocks towards the implementation of nanodevices in the fields of nanoelectronics, opto
Externí odkaz:
https://doaj.org/article/4974c552f40f4ed8af701bbf77834c38
Autor:
Natasha Tabassum, Mounika Kotha, Vidya Kaushik, Brian Ford, Sonal Dey, Edward Crawford, Vasileios Nikas, Spyros Gallis
Publikováno v:
Nanomaterials, Vol 8, Iss 11, p 906 (2018)
The field of semiconductor nanowires (NWs) has become one of the most active and mature research areas. However, progress in this field has been limited, due to the difficulty in controlling the density, orientation, and placement of the individual N
Externí odkaz:
https://doaj.org/article/439b39099bcb454eae2978a8ee34116f
Autor:
Edward Crawford, Vidya Kaushik, Spyros Gallis, Vasileios Nikas, Alex Kaloyeros, Mengbing Huang, Natasha Tabassum
Publikováno v:
Nanophotonics, Vol 9, Iss 6, Pp 1425-1437 (2020)
High-precision placement of rare-earth ions in scalable silicon-based nanostructured materials exhibiting high photoluminescence (PL) emission, photostable and polarized emission, and near-radiative-limited excited state lifetimes can serve as critic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5228fe4da9a75ff9cbdb187f26780f5d
https://doi.org/10.1515/nanoph-2019-0535
https://doi.org/10.1515/nanoph-2019-0535
Publikováno v:
Advanced Photonics Research, Vol 2, Iss 12, Pp n/a-n/a (2021)
Anisotropic layered GaTe has emerged as a potential material for polarization‐sensitive applications. The optical anisotropy in monoclinic GaTe is triggered by its in‐plane structural anisotropy, as each layer comprises periodic chain‐like stru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9446f374d382d8ceba9392bb68cb8cc0
https://doaj.org/article/8bf424a0d7364afe89e212524910c1e7
https://doaj.org/article/8bf424a0d7364afe89e212524910c1e7
Autor:
Alex E. Kaloyeros, Spyros Gallis
Publikováno v:
Applied Physics Letters. 120:231104
Semiconductor nanowires show great potential for controlling light–matter interactions. Moreover, their polarization-dependent optical properties, primarily enabled by their dielectric mismatch, are a significant requisite for a plethora of emergin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66cabb7688135a3247602feb9cbf306a
https://doi.org/10.1063/5.0089433
https://doi.org/10.1063/5.0089433
Autor:
Alexei Nazarov, D. V. Kysil, Valentyn Tertykh, Spyros Gallis, M. Adlung, V. S. Lysenko, A.V. Vasin
Publikováno v:
Journal of Luminescence. 190:141-147
Carbon incorporated silica nano-powder (SiO 2 :C) has been fabricated by chemical treatment of a fumed silica with tetramethoxysilane and subsequent annealing at 700 °C in pure nitrogen ambient. Upon thermal treatment SiO 2 :C powder exhibits strong
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad820c172bf671d95bfa17e2c79573ec
https://doi.org/10.1016/j.jlumin.2017.05.045
https://doi.org/10.1016/j.jlumin.2017.05.045
Publikováno v:
Nanomaterials, Vol 9, Iss 11, p 1510 (2019)
Nanomaterials
Volume 9
Issue 11
Nanomaterials
Volume 9
Issue 11
Emerging two-dimensional gallium chalcogenides, such as gallium telluride (GaTe), are considered promising layered semiconductors that can serve as vital building blocks towards the implementation of nanodevices in the fields of nanoelectronics, opto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b2998d6e2bbbedc2840f82210746003b
https://www.mdpi.com/2079-4991/9/11/1510
https://www.mdpi.com/2079-4991/9/11/1510
Publikováno v:
Materials, Vol 10, Iss 4, p 446 (2017)
Materials; Volume 10; Issue 4; Pages: 446
Materials
Materials; Volume 10; Issue 4; Pages: 446
Materials
The following study focuses on the photoluminescence (PL) enhancement of chemically synthesized silicon oxycarbide (SiCxOy) thin films and nanowires through defect engineering via post-deposition passivation treatments. SiCxOy materials were deposite
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::002a07dfaa904c2e9130e65ca79b7025
http://www.mdpi.com/1996-1944/10/4/446
http://www.mdpi.com/1996-1944/10/4/446