Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Sprinkle, Mike"'
Autor:
Dlubak, Bruno, Martin, Marie-Blandine, Deranlot, Cyrile, Servet, Bernard, Xavier, Stéphane, Mattana, Richard, Sprinkle, Mike, Berger, Claire, De Heer, Walt A., Petroff, Frédéric, Anane, Abdelmadjid, Seneor, Pierre, Fert, Albert
Publikováno v:
B. Dlubak et al. Nature Physics 8 (2012) 557
Spin information processing is a possible new paradigm for post-CMOS (complementary metal-oxide semiconductor) electronics and efficient spin propagation over long distances is fundamental to this vision. However, despite several decades of intense r
Externí odkaz:
http://arxiv.org/abs/1307.1555
Autor:
de Heer, Walt. A., Berger, Claire, Ruan, Ming, Sprinkle, Mike, Li, Xuebin, Hu, Yike, Zhang, Baiqian, Hankinson, John, Conrad, Edward H.
Publikováno v:
PNAS 108 (41) 16900--16905 (2011)
After the pioneering investigations into graphene-based electronics at Georgia Tech (GT), great strides have been made developing epitaxial graphene on silicon carbide (EG) as a new electronic material. EG has not only demonstrated its potential for
Externí odkaz:
http://arxiv.org/abs/1103.3552
Autor:
de Heer, Walt A., Berger, Claire, Wu, Xiaosong, Sprinkle, Mike, Hu, Yike, Ruan, Ming, Stroscio, Joseph A., First, Phillip N., Haddon, Robert, Piot, Benjamin, Faugeras, Clement, Potemski, Marek, Moon, Jeong-Sun
Publikováno v:
J. Phys. D: Appl. Phys. 43, 374007 (2010)
Since its inception in 2001, the science and technology of epitaxial graphene on hexagonal silicon carbide has matured into a major international effort and is poised to become the first carbon electronics platform. A historical perspective is presen
Externí odkaz:
http://arxiv.org/abs/1003.4776
Autor:
Wu, Xiaosong, Hu, Yike, Ruan, Ming, Madiomanana, Nerasoa K, Hankinson, John, Sprinkle, Mike, Berger, Claire, de Heer, Walt A.
Publikováno v:
Appl. Phys. Lett. 95, 223108 (2009)
The quantum Hall effect, with a Berry's phase of $\pi$ is demonstrated here on a single graphene layer grown on the C-face of 4H silicon carbide. The mobility is $\sim$ 20,000 cm$^2$/V$\cdot$s at 4 K and ~15,000 cm$^2$/V$\cdot$s at 300 K despite cont
Externí odkaz:
http://arxiv.org/abs/0909.2903
Autor:
Wu, Xiaosong, Hu, Yike, Ruan, Ming, Madiomanana, Nerasoa K, Hankinson, John, Sprinkle, Mike, Berger, Claire, de Heer, Walt A.
The observation of the anomalous quantum Hall effect in exfoliated graphene flakes triggered an explosion of interest in graphene. It was however not observed in high quality epitaxial graphene multilayers grown on silicon carbide substrates. The qua
Externí odkaz:
http://arxiv.org/abs/0908.4112
Autor:
Li, Xuebin, Wu, Xiaosong, Sprinkle, Mike, Ming, Fan, Ruan, Ming, Hu, Yike, Berger, Claire, de Heer, Walt A.
Publikováno v:
Phys. Status Solidi A 207, No. 2, 286-290 (2010)
Three types of first generation epitaxial graphene field effect transistors (FET) are presented and their relative merits are discussed. Graphene is epitaxially grown on both the carbon and silicon faces of hexagonal silicon carbide and patterned wit
Externí odkaz:
http://arxiv.org/abs/0908.0017
Autor:
Orlita, Milan, Faugeras, Clement, Plochocka, Paulina, Neugebauer, Petr, Martinez, Gerard, Maude, Duncan K., Barra, Anne-Laure, Sprinkle, Mike, Berger, Claire, de Heer, Walter A., Potemski, Marek
Publikováno v:
Phys. Rev. Lett. 101, 267601 (2008)
Multi-layer epitaxial graphene (MEG) is investigated using far infrared (FIR) transmission experiments in the different limits of low magnetic fields and high temperatures. The cyclotron-resonance like absorption is observed at low temperature in mag
Externí odkaz:
http://arxiv.org/abs/0808.3662
Autor:
Kedzierski, Jakub, Hsu, Pei-Lan, Healey, Paul, Wyatt, Peter, Keast, Craig, Sprinkle, Mike, Berger, Claire, de Heer, Walt
Publikováno v:
IEEE /Transactions on Electron Devices 55, 2078 (2008).
This paper describes the behavior of top gated transistors fabricated using carbon, particularly epitaxial graphene on SiC, as the active material. In the past decade research has identified carbon-based electronics as a possible alternative to silic
Externí odkaz:
http://arxiv.org/abs/0801.2744
Publikováno v:
Phys. Rev. Lett. 101, 026801 (2008)
Graphene oxide (GO) flakes have been deposited to bridge the gap between two epitaxial graphene electrodes to produce all-graphene devices. Electrical measurements indicate the presence of Schottky barriers (SB) at the graphene/graphene oxide junctio
Externí odkaz:
http://arxiv.org/abs/0712.0820
Autor:
de Heer, Walt A., Berger, Claire, Ruan, Ming, Sprinkle, Mike, Li, Xuebin, Hu, Yike, Zhang, Baiqian, Hankinson, John, Conrad, Edward
Publikováno v:
Proceedings of the National Academy of Sciences of the United States of America, 2011 Oct 01. 108(41), 16900-16905.
Externí odkaz:
https://www.jstor.org/stable/41321805