Výsledky vyhledávání - "Sprinkle, Michael"

Dissertation/ Thesis

Epitaxial graphene on silicon carbide: low-vacuum growth, characterization, and device fabrication

Autor: Sprinkle, Michael W.

In the past several years, epitaxial graphene on silicon carbide has been transformed from an academic curiosity of social scientists to a leading candidate material to replace silicon in post-CMOS electronics. This has come with rapid development of

Externí odkaz: http://hdl.handle.net/1853/34735

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Carrier dynamics in epitaxial graphene close to the Dirac point

Autor: Winnerl, Stephan, Orlita, Milan, Plochocka, Paulina, Kossacki, Piotr, Potemski, Marek, Winzer, Torben, Malic, Ermin, Knorr, Andreas, Sprinkle, Michael, Berger, Claire, de Heer, Walter A., Schneider, Harald, Helm, Manfred

Publikováno v: Phys. Rev. Lett. 107, 237401 (2011)

We study the carrier dynamics in epitaxially grown graphene in the range of photon energies from 10 - 250 meV. The experiments complemented by microscopic modeling reveal that the carrier relaxation is significantly slowed down as the photon energy i

Externí odkaz: http://arxiv.org/abs/1105.2518

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Epitaxial graphene

Autor: de Heer, Walt A., Berger, Claire, Wu, Xiaosong, First, Phillip N., Conrad, Edward H., Li, Xuebin, Li, Tianbo, Sprinkle, Michael, Hass, Joanna, Sadowski, Marcin L., Potemski, Marek, Martinez, Gerard

Publikováno v: Solid State Comm. 143, 92 (2007)

Graphene multilayers are grown epitaxially on single crystal silicon carbide. This system is composed of several graphene layers of which the first layer is electron doped due to the built-in electric field and the other layers are essentially undope

Externí odkaz: http://arxiv.org/abs/0704.0285

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