Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Spooner, Terry"'
Autor:
Chen, James Hsueh-Chung, Fan, Susan Su-Chen, Standaert, Theodorus E., Spooner, Terry A., Paruchuri, Vamsi
Publikováno v:
AMC 2015 – Advanced Metallization Conference
In this paper, a study of tungsten metallization in advanced BEOL interconnects is presented. A mature 10 nm process is used for comparison between the tungsten and conventional copper metallization. Wafers were processed together till M1 dual-damasc
Autor:
Loquet, Yannick, Mignot, Yann, Waskiewicz, Christopher, Chen, James Hsueh-Chung, Sankarapandian, Muthumanickam, Chen, Shyng-Tsong, Flaitz, Philip, Tomizawa, Hideyuki, Tseng, Chia-Hsun, Beard, Marcy, Morris, Bryan, Kleemeier, Walter, Liniger, E., Spooner, Terry
Publikováno v:
In Microelectronic Engineering July 2013 107:138-144
Akademický článek
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Akademický článek
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Autor:
Lanzillo, Nicholas A., Bhosale, Prasad S., Yang, Chih-Chao, Spooner, Terry, Standaert, Theodorus, Bonilla, Griselda, Restrepo, Oscar D., Cruz-Silva, Eduardo, Youp Kim, Byoung, Child, Craig, Murali, Kota V. R. M.
Publikováno v:
Applied Physics Letters; 4/16/2018, Vol. 112 Issue 16, pN.PAG-N.PAG, 5p
Autor:
John A. Fitzsimmons, Vincent J. McGahay, K. Malone, M. Minami, Siddhartha Panda, Manfred Horstmann, A. Wei, Helmut Bierstedt, H. Nii, A. Waite, A. Sakamoto, Michael A. Gribelyuk, M. Cullinan-Scholl, D. Harmon, A. Hellmich, M. Kiene, Patrick Press, Hartmut Ruelke, H. Zhu, H. Chen, H. Nakayama, Anthony G. Domenicucci, G. Sudo, Henry A. Nye, P. Fisher, Hans-Jürgen Engelmann, H. VanMeer, M. Newport, X. Chen, Tenko Yamashita, Cathryn Christiansen, Hasan M. Nayfeh, Dureseti Chidambarrao, Guido Koerner, Christopher D. Muzzy, S.-F. Huang, Ralf Otterbach, David M. Fried, J. Kluth, Jörg Hohage, M. Trentsch, I. Peidous, Thorsten Kammler, Mukesh Khare, Dominic J. Schepis, K. Rim, Spooner Terry A, K. Miyamoto, P.V. McLaughlin, Michael Raab, T. H. Ivers, Dan Mocuta, D.R. Davies, Jason Gill, Scott Luning, Woo-Hyeong Lee, Gary B. Bronner, Judson R. Holt, Gregory G. Freeman, Matthias Schaller, R. Murphy, J. Pellerin, J. Klais, Kai Frohberg, A. Neu, N. Kepler, R. Bolam, C. Labelle, Anuj Madan, K. Hempel, C. Reichel, Heike Salz, J. Hontschel, T. Sato, J. Cheng, D. Greenlaw, Linda Black, Paul D. Agnello, K. Ida
Publikováno v:
Scopus-Elsevier
A high performance 65 nm SOI CMOS technology is presented. Dual stress liner (DSL), embedded SiGe, and stress memorization techniques are utilized to enhance transistor speed. Advanced-low-K BEOL for this technology features 10 wiring levels with a n
Autor:
T. Iijima, Nicholas C. M. Fuller, Satya V. Nitta, Vincent J. McGahay, Qinghuang Lin, Shom Ponoth, Jason Gill, C. Labelle, S. H. Chen, Derren N. Dunn, Spooner Terry A, Stephan A. Cohen, C. Tyberg, James R. Lloyd, Henry A. Nye, Christopher D. Muzzy
Publikováno v:
2006 International Interconnect Technology Conference.
We have demonstrated porous ultra low-K (ULK)/Cu interconnect integration using via first integration scheme and a direct ULK CMP process. The key features of the damage-resistant porous ULK material were novel material chemistry, a higher carbon con
Autor:
J.C. Patel, Johnny Widodo, Anita Madan, Robert L. Wisnieff, Darryl D. Restaino, Brian Wayne Herbst, Spooner Terry A, Jason Gill, Hosadurga Shobha, C. Labelle, Stephan A. Cohen, Michael Lane, Eva E. Simonyi, Kelly Malone, X.-H. Liu, Y. Shimooka, Christopher D. Muzzy, Griselda Bonilla, P. Minami, Alfred Grill, John A. Fitzsimmons, T. H. Ivers, Steven E. Molis, Eric G. Liniger, Son Nguyen, Vincent J. McGahay, Robert Hannon, Henry A. Nye, T. Lee, Brett H. Engel, M. Kiene, F. Chen, Stephan Grunow, Cathryn Christiansen, M. Cullinan-Scholl, Derren N. Dunn, Timothy M. Shaw, Habib Hichri, Jeremy L. Martin, N. Klymko, P.V. McLaughlin, K. Ida, James J. Demarest, A. Sakamoto
Publikováno v:
2006 International Interconnect Technology Conference.
A low tensile stress SiCOH dielectric with K=2.15 has been developed for implementation in the 2times and 4times fatwire levels for enhanced RC performance in the 65nm technology node. Integration challenges related to mechanical integrity and proces
Autor:
Ian D. Melville, Henry A. Nye, Edward Barth, Paul S. McLaughlin, John A. Fitzsimmons, X. Chen, Vincent J. McGahay, T. H. Ivers, G. A. Biery, D.K. Manger, T.C. Chen, A. McDonald, E.N. Levine, Spooner Terry A, Ronald D. Goldblatt, S.E. Greco, C. DeWan
Publikováno v:
Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407).
The integration of dual damascene copper with fluorosilicate glass (FSC) at the 0.18 /spl mu/m technology node is described. The BEOL structure has been implemented for an advanced CMOS technology, and along with an SOI FEOL is being used for high pe
Autor:
William F. Landers, D.K. Manger, Henry A. Nye, Sampath Purushothaman, Ronald D. Goldblatt, Naftali E. Lustig, Andrew H. Simon, Sandra G. Malhotra, Erdem Kaltalioglu, S Das, M. Stetter, Soon-Cheon Seo, Chenming Hu, J.B. Connolly, Timothy J. Dalton, John A. Fitzsimmons, Charles R. Davis, Birendra N. Agarwala, John E. Heidenreich, Andy Cowley, Daniel C. Edelstein, M.B. Anand, Spooner Terry A, Alina Deutsch, Vincent J. McGahay, H. Rathore, P.A. Emmi, Richard A. Wachnik, Mahadevaiyer Krishnan, P. Jones, Timothy M. Shaw, Stephan A. Cohen, J.G. Ryan, G. A. Biery, Z.G. Chen, Edward Barth, C.G. Faltermeier, J. L. Hedrick, Junjun Liu, C. DeWan, J.P. Hummel, B.E. Kastenmeier, Eric G. Liniger, R. Mih
Publikováno v:
Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407).
The integration of dual damascene copper with low-k dielectric at the 0.13 /spl mu/m technology node is described. Up to five levels of copper wiring at three different metal pitches is provided in a spin-on organic inter metal dielectric (SiLK/sup T