Výsledky vyhledávání - "Splawn, Heather"

Report

Surface chemistry models for GaAs epitaxial growth and hydride cracking using reacting flow simulations

Autor: Hassanaly, Malik, Sitaraman, Hariswaran, Schulte, Kevin L., Ptak, Aaron J., Simon, John, Udwary, Kevin, Leach, Jacob H., Splawn, Heather

Publikováno v: Journal of Applied Physics, Vol. 130, No. 11, pp. 115702, 2021

Hydride Vapor Phase Epitaxy (HVPE) is a promising technology that can aid in the cost reduction of III-V materials and devices manufacturing, particularly high-efficiency solar cells for space and terrestrial applications. However, recent demonstrati

Externí odkaz: http://arxiv.org/abs/2109.11540

Zobrazit plný text záznamu

Report

High Permittivity Dielectric Field-Plated Vertical (001) $\beta$-Ga$_2$O$_3$ Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of $>$ 1 GW/cm$^{2}$

Autor: Roy, Saurav, Bhattacharyya, Arkka, Ranga, Praneeth, Splawn, Heather, Leach, Jacob, Krishnamoorthy, Sriram

This paper presents vertical (001) oriented $\beta$-Ga$_2$O$_3$ field plated (FP) Schottky barrier diode (SBD) with a novel extreme permittivity dielectric field oxide. A thin drift layer of 1.7 $\mu m$ was used to enable a punch-through (PT) field p

Externí odkaz: http://arxiv.org/abs/2105.04413

Zobrazit plný text záznamu