Optical Properties of Vanadium in 4H Silicon Carbide for Quantum Technology

Autor: Spindlberger, L., Csóré, A., Thiering, G., Putz, S., Karhu, R., Hassan, J. Ul, Son, N. T., Fromherz, T., Gali, A., Trupke, M.

Publikováno v: Phys. Rev. Applied 12, 014015 (2019)

We study the optical properties of tetravalent vanadium impurities in 4H silicon carbide (4H SiC). Emission from two crystalline sites is observed at wavelengths of 1.28 \mum and 1.33 \mum, with optical lifetimes of 163 ns and 43 ns. Group theory and

Externí odkaz: http://arxiv.org/abs/1901.05371

Photoluminescence enhancement by deterministically site-controlled, vertically stacked SiGe quantum dots.

Autor: Schuster J; Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Straße 69, 4040, Linz, Austria. jeffrey.schuster@jku.at., Aberl J; Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Straße 69, 4040, Linz, Austria., Vukušić L; Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Straße 69, 4040, Linz, Austria., Spindlberger L; Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Straße 69, 4040, Linz, Austria., Groiss H; Christian Doppler Laboratory for Nanoscale Phase Transformations, Center for Surface and Nanoanalytics, Johannes Kepler University Linz, Altenberger Straße 69, 4040, Linz, Austria., Fromherz T; Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Straße 69, 4040, Linz, Austria., Brehm M; Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Straße 69, 4040, Linz, Austria., Schäffler F; Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenberger Straße 69, 4040, Linz, Austria.

Publikováno v: Scientific reports [Sci Rep] 2021 Oct 18; Vol. 11 (1), pp. 20597. Date of Electronic Publication: 2021 Oct 18.

Enhanced Telecom Emission from Single Group-IV Quantum Dots by Precise CMOS-Compatible Positioning in Photonic Crystal Cavities.

Autor: Schatzl M; Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz , Altenbergerstraße 69, 4040 Linz, Austria., Hackl F; Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz , Altenbergerstraße 69, 4040 Linz, Austria., Glaser M; Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz , Altenbergerstraße 69, 4040 Linz, Austria., Rauter P; Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz , Altenbergerstraße 69, 4040 Linz, Austria., Brehm M; Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz , Altenbergerstraße 69, 4040 Linz, Austria., Spindlberger L; Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz , Altenbergerstraße 69, 4040 Linz, Austria., Simbula A; Dipartimento di Fisica, Università degli Studi di Pavia , Via A. Bassi 6, 27100 Pavia, Italy., Galli M; Dipartimento di Fisica, Università degli Studi di Pavia , Via A. Bassi 6, 27100 Pavia, Italy., Fromherz T; Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz , Altenbergerstraße 69, 4040 Linz, Austria., Schäffler F; Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz , Altenbergerstraße 69, 4040 Linz, Austria.

Publikováno v: ACS photonics [ACS Photonics] 2017 Mar 15; Vol. 4 (3), pp. 665-673. Date of Electronic Publication: 2017 Feb 13.

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Site-controlled growth of In(Ga)As/GaAs quantum dots on patterned substrate.

Autor: Zhao, Xiaoyang, Liu, Wen, Bao, Yidi, Chen, Xiaoling, Ji, Chunxue, Yang, Guiqiang, Wei, Bo, Yang, Fuhua, Wang, Xiaodong

Publikováno v: Nanotechnology; 2/3/2025, Vol. 36 Issue 5, p1-17, 17p