Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Spencer A. Wells"'
Autor:
Mark C. Hersam, Spencer A. Wells, D. Bruce Buchholz, Yihui He, Lintao Peng, Tobin J. Marks, John B Ketterson, Li Zeng, Saiful Islam, Matthew Grayson, Michael J. Bedzyk, Mercouri G. Kanatzidis, Vinod K. Sangwan
Publikováno v:
Journal of the American Chemical Society. 143:6221-6228
Chalcogenide-based phase change memory (PCM) is a key enabling technology for optical data storage and electrical nonvolatile memory. Here, we report a new phase change chalcogenide consisting of a...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7b6118b7210677eeba5ccea5d19faca
https://doi.org/10.1021/jacs.1c01484
https://doi.org/10.1021/jacs.1c01484
Autor:
Jan Luxa, Joohoon Kang, Mark C. Hersam, Zdeněk Sofer, James P. Male, J. Tyler Gish, David Lam, Spencer A. Wells, G. Jeffrey Snyder, Vinod K. Sangwan
Publikováno v:
Nano Research. 14:1961-1966
Emerging layered semiconductors present multiple advantages for optoelectronic technologies including high carrier mobilities, strong light-matter interactions, and tunable optical absorption and emission. Here, metal-semiconductor-metal avalanche ph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6236f2decb801c915b2778f3466e7fc5
https://doi.org/10.1007/s12274-020-3059-3
https://doi.org/10.1007/s12274-020-3059-3
Autor:
Spencer A. Wells, Guihua Zhou, Jingbo Chang, Shun Mao, Ren Ren, Xiaoyu Sui, Junhong Chen, Xiaoru Guo, Haihui Pu, Mark C. Hersam, Keying Shi, Yantao Chen
Publikováno v:
Molecular Systems Design & Engineering. 4:491-502
Two-dimensional (2D) crystalline nanomaterial based field-effect transistor (FET) water sensors are attracting increased attention due to their low cost, portability, rapid response, and high sensitivity to aqueous contaminants. However, a generic mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::310e9bc3060247c58d5cff37b2c3bb83
https://doi.org/10.1039/c8me00056e
https://doi.org/10.1039/c8me00056e
Amorphous to Crystal Phase Change Memory Effect with Two-Fold Bandgap Difference in Semiconducting K
Autor:
Saiful M, Islam, Vinod K, Sangwan, D, Bruce Buchholz, Spencer A, Wells, Lintao, Peng, Li, Zeng, Yihui, He, Mark C, Hersam, John B, Ketterson, Tobin J, Marks, Michael J, Bedzyk, Matthew, Grayson, Mercouri G, Kanatzidis
Publikováno v:
Journal of the American Chemical Society. 143(16)
Chalcogenide-based phase change memory (PCM) is a key enabling technology for optical data storage and electrical nonvolatile memory. Here, we report a new phase change chalcogenide consisting of a 3D network of ionic (K···Se) and covalent bonds (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::7d11bc3ebf8d9892bb84b38efe8d6d7d
https://pubmed.ncbi.nlm.nih.gov/33856803
https://pubmed.ncbi.nlm.nih.gov/33856803
Autor:
Chulin Wang, Lintao Peng, Spencer A Wells, Jeffrey D Cain, Yi-Kai Huang, Lawrence A Rhoads, Vinayak P Dravid, Mark C Hersam, Matthew A Grayson
Publikováno v:
2D Materials. 9:031002
A scaling law is demonstrated in the conductivity of gated two-dimensional (2D) materials with tunable concentrations of ionized impurity scatterers. Experimental data is shown to collapse onto a single 2D conductivity scaling (2DCS) curve when the m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb653d5c453d89a994b1a66e7a55c7ce
https://doi.org/10.1088/2053-1583/ac72b0
https://doi.org/10.1088/2053-1583/ac72b0
Autor:
Matthew S. Rahn, Pierre Darancet, Chengmei Zhong, Zdeněk Sofer, Lincoln J. Lauhon, Emily A. Weiss, Mark C. Hersam, Antonio Facchetti, Alex Henning, Vinod K. Sangwan, Jan Luxa, Qunfei Zhou, Shaowei Li, Xiaolong Liu, Spencer A. Wells, Hong Youl Park, Tobin J. Marks
Publikováno v:
ACS nano. 14(3)
Layered indium selenide (InSe) is an emerging two-dimensional semiconductor that has shown significant promise for high-performance transistors and photodetectors. The range of optoelectronic applications for InSe can potentially be broadened by form
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d6916beff475d7273bdaa013955135ef
https://pubmed.ncbi.nlm.nih.gov/32078300
https://pubmed.ncbi.nlm.nih.gov/32078300
Autor:
J. Tyler Gish, Vinod K. Sangwan, Spencer A. Wells, Alex Henning, Mark C. Hersam, Lincoln J. Lauhon
Publikováno v:
Nano Letters. 18:7876-7882
With exceptional charge carrier mobilities and a direct bandgap at most thicknesses, indium selenide (InSe) is an emerging layered semiconductor that has generated significant interest for electronic and optoelectronic applications. However, exfoliat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::29a36febf871c6eb3c041269d5793c14
https://doi.org/10.1021/acs.nanolett.8b03689
https://doi.org/10.1021/acs.nanolett.8b03689
Autor:
Moon Sung Kang, Junmo Kang, Yongsuk Choi, Jeong Ho Cho, Spencer A. Wells, Mark C. Hersam, Deep Jariwala, Tobin J. Marks
Publikováno v:
Chemistry of Materials. 29:4008-4013
Capacitive coupling between an overlying ion gel electrolyte and an underlying oxide thin film is utilized to substantially suppress the operating voltage of field-effect transistors (FETs) based on two-dimensional (2D) transition metal dichalcogenid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0edfc2a1572e6947fef126e48b4da5b7
https://doi.org/10.1021/acs.chemmater.7b00573
https://doi.org/10.1021/acs.chemmater.7b00573
Publikováno v:
Quantum Sensing and Nano Electronics and Photonics XVI.
In two-dimensional (2D) materials, such as black phosphorus, the hysteresis attributed to surface and interfacial disorder can severely limit applications in electronics. In this work, we characterize the hysteresis in Al2O3-encapsulated black phosph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e90bf3cd99c22e6bd4f380bce1c55e67
https://doi.org/10.1117/12.2514105
https://doi.org/10.1117/12.2514105
Publikováno v:
ACS Nano. 10:3900-3917
Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDCs) and black phosphorus (BP) have beneficial electronic, optical, and physical properties at the few-layer limit. As atomically thin materials, 2D TMDCs and BP are highly sensi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2219d7155c4c3ae33a7d68d6b63320db
https://doi.org/10.1021/acsnano.6b01091
https://doi.org/10.1021/acsnano.6b01091