Zobrazeno 1 - 10
of 132
pro vyhledávání: '"Spemann, Daniel"'
Image charge detection is a non-perturbative pre-detection approach for deterministic ion implantation. Using low energy ion bunches as a model system for highly charged single ions, we experimentally studied the error and detection rates of an image
Externí odkaz:
https://ul.qucosa.de/id/qucosa%3A85002
https://ul.qucosa.de/api/qucosa%3A85002/attachment/ATT-0/
https://ul.qucosa.de/api/qucosa%3A85002/attachment/ATT-0/
Autor:
Jakob, Alexander M., Robson, Simon G., Firgau, Hannes R., Mourik, Vincent, Schmitt, Vivien, Holmes, Danielle, Posselt, Matthias, Mayes, Edwin L. H., Spemann, Daniel, Morello, Andrea, Jamieson, David N.
Semiconductor spin qubits combine excellent quantum performance with the prospect of manufacturing quantum devices using industry-standard metal-oxide-semiconductor (MOS) processes. This applies also to ion-implanted donor spins, which further afford
Externí odkaz:
http://arxiv.org/abs/2309.09626
Graphene-Enhanced Single Ion Detectors for Deterministic Near-Surface Dopant Implantation in Diamond
Autor:
Collins, Nicholas F. L., Jakob, Alexander M., Robson, Simon G., Lim, Shao Qi, Räcke, Paul, Johnson, Brett C., Liu, Boqing, Lu, Yuerui, Spemann, Daniel, McCallum, Jeffrey C., Jamieson, David N.
Colour centre ensembles in diamond have been the subject of intensive investigation for many applications including single photon sources for quantum communication, quantum computation with optical inputs and outputs, and magnetic field sensing down
Externí odkaz:
http://arxiv.org/abs/2306.07496
Autor:
John, Roger, Lehnert, Jan, Mensing, Michael, Spemann, Daniel, Pezzagna, Sébastien, Meijer, Jan
Using shallow implantation of ions and molecules with masses centred at 27 atomic mass units(amu) in diamond, a new artificial optical centre with unique properties has been created. The centre shows a linearly polarised fluorescence with a main narr
Externí odkaz:
https://ul.qucosa.de/id/qucosa%3A84932
https://ul.qucosa.de/api/qucosa%3A84932/attachment/ATT-0/
https://ul.qucosa.de/api/qucosa%3A84932/attachment/ATT-0/
Autor:
Stiller, Markus, Barzola-Quiquia, Jose, Esquinazi, Pablo, Spemann, Daniel, Meijer, Jan, Lorenz, Michael, Grundmann, Marius
Publikováno v:
AIP Advances 6, 125009 (2016) doi: 10.1063/1.4971794
The temperature and field dependence of the magnetization of epitaxial, undoped anatase TiO2 thin films on SrTiO3 substrates was investigated. Low-energy ion irradiation was used to modify the surface of the films within a few nanometers, yet with hi
Externí odkaz:
https://ul.qucosa.de/id/qucosa%3A15186
https://ul.qucosa.de/api/qucosa%3A15186/attachment/ATT-0/
https://ul.qucosa.de/api/qucosa%3A15186/attachment/ATT-0/
Autor:
Precker, Christian E., Esquinazi, Pablo D., Champi, Ana, Barzola-Quiquia, José, Zoraghi, Mahsa, Muinos-Landin, Santiago, Setzer, Annette, Böhlmann, Winfried, Spemann, Daniel, Meijer, Jan, Münster, Tom, Bähre, Oliver, Klöss, Gert, Beth, Henning
Publikováno v:
New J. Phys. 18 (2016) 113041 doi:10.1088/1367-2630/18/11/113041
Measuring with high precision the electrical resistance of highly ordered natural graphite samples from a Brazil mine, we have identified a transition at ∼350 K with ∼40 K transition width. The steplike change in temperature of the resistance, it
Externí odkaz:
https://ul.qucosa.de/id/qucosa%3A15182
https://ul.qucosa.de/api/qucosa%3A15182/attachment/ATT-0/
https://ul.qucosa.de/api/qucosa%3A15182/attachment/ATT-0/
We investigated the magnetic properties of hydrogen-plasma-treated ZnO single crystals by using superconducting quantum interferometer device magnetometry. In agreement with the expected hydrogen penetration depth, we found that ferromagnetic behavio
Externí odkaz:
https://ul.qucosa.de/id/qucosa%3A80185
https://ul.qucosa.de/api/qucosa%3A80185/attachment/ATT-0/
https://ul.qucosa.de/api/qucosa%3A80185/attachment/ATT-0/
Autor:
Robson, Simon G., Räcke, Paul, Jakob, Alexander M., Collins, Nicholas, Firgau, Hannes R., Schmitt, Vivien, Mourik, Vincent, Morello, Andrea, Mayes, Edwin, Spemann, Daniel, Jamieson, David N.
The demonstration of universal quantum logic operations near the fault-tolerance threshold establishes ion-implanted near-surface donor atoms as a plausible platform for scalable quantum computing in silicon. The next technological step forward requi
Externí odkaz:
http://arxiv.org/abs/2201.11339
Publikováno v:
Journal of Applied Physics; 6/14/2024, Vol. 135 Issue 22, p1-9, 9p
Autor:
Rohkamm, Erik1 (AUTHOR) erik.rohkamm@iom-leipzig.de, Spemann, Daniel1 (AUTHOR), Scholze, Frank1 (AUTHOR), Frost, Frank1 (AUTHOR)
Publikováno v:
Journal of Applied Physics. 6/14/2024, Vol. 135 Issue 22, p1-9. 9p.