Zobrazeno 1 - 10
of 1 477
pro vyhledávání: '"Speck J."'
Publikováno v:
Appl. Phys. Lett. 91, 161904 (2007)
Real-time analysis of the growth modes during homoepitaxial (0001)GaN growth by plasma-assisted molecular beam epitaxy was performed using reflection high energy electron diffraction. A growth mode map was established as a function of Ga/N flux ratio
Externí odkaz:
http://arxiv.org/abs/2401.17341
Publikováno v:
J. Appl. Phys. 104, 033541 (2008)
Thermal decomposition of wurtzite (0001)-oriented GaN was analyzed: in vacuum, under active N exposure, and during growth by rf-plasma assisted molecular beam epitaxy. The GaN decomposition rate was determined by measurements of the Ga desorption usi
Externí odkaz:
http://arxiv.org/abs/2401.17339
Akademický článek
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Autor:
Hahn, W., Lentali, J. -M., Polovodov, P., Young, N., Nakamura, S., Speck, J. S., Weisbuch, C., Filoche, M., Wu, Y-R., Piccardo, M., Maroun, F., Martinelli, L., Lassailly, Y., Peretti, J.
Publikováno v:
Phys. Rev. B 98, 045305 (2018)
We present direct experimental evidences of Anderson localization induced by the intrinsic alloy compositional disorder of InGaN/GaN quantum wells. Our approach relies on the measurement of the luminescence spectrum under local injection of electrons
Externí odkaz:
http://arxiv.org/abs/1805.09030
Autor:
Borgatti, F., Berger, J. A., Céolin, D., Zhou, J. S., Kas, J. J., Guzzo, M., McConville, C. F., Offi, F., Panaccione, G., Regoutz, A., Payne, D. J., Rueff, J. -P., Bierwagen, O., White, M. E., Speck, J. S., Gatti, M., Egdell, R. G.
Publikováno v:
Phys. Rev. B 97, 155102 (2018)
The longstanding problem of interpretation of satellite structures in core level photoemission spectra of metallic systems with a low density of conduction electrons is addressed using the specific example of Sb-doped SnO$_2$. Comparison of {\it ab i
Externí odkaz:
http://arxiv.org/abs/1710.08829
Publikováno v:
Journal of Applied Physics; 4/14/2023, Vol. 133 Issue 14, p1-10, 10p
Autor:
Koehl, W. F., Wong, M. H., Poblenz, C., Swenson, B., Mishra, U. K., Speck, J. S., Awschalom, D. D.
Electrically generated spin polarization is probed directly in bulk GaN using Kerr rotation spectroscopy. A series of n-type GaN epilayers are grown in the wurtzite phase both by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition
Externí odkaz:
http://arxiv.org/abs/0906.0785
Autor:
Taher, Deeb, Awwadi, Firas F., Speck, J. Matthäus, Korb, Marcus, Schaarschmidt, Dieter, Wagner, Christoph, Amarne, Hazem, Merzweiler, Kurt, van Koten, Gerard, Lang, Heinrich
Publikováno v:
In Journal of Organometallic Chemistry 15 May 2018 863:1-9
Publikováno v:
In Scripta Materialia 15 April 2018 148:75-81
We present evidence of strong Shubnikov-de-Haas magnetoresistance oscillations in a polarization-doped degenerate three-dimensional electron slab in an Al$_{x}$Ga$_{1-x}$N semiconductor system. The degenerate free carriers are generated by a novel te
Externí odkaz:
http://arxiv.org/abs/cond-mat/0209664