Zobrazeno 1 - 10
of 1 543
pro vyhledávání: '"Speck, James"'
Autor:
Korlacki, Rafał, Hilfiker, Matthew, Knudtson, Jenna, Stokey, Megan, Kilic, Ufuk, Mauze, Akhil, Zhang, Yuewei, Speck, James, Darakchieva, Vanya, Schubert, Mathias
The bowing of the energy of the three lowest band-to-band transitions in $\beta$-(Al$_{x}$Ga$_{1-x}$)$_2$O$_3$ alloys was resolved using a combined density functional theory (DFT) and generalized spectroscopic ellipsometry (GSE) approach. The DFT cal
Externí odkaz:
http://arxiv.org/abs/2209.06025
Autor:
von Wenckstern, Holger, Splith, Daniel Thomas, Schmidt, Florian, Grundmann, Marius, Bierwagen, Oliver, Speck, James S.
Publikováno v:
APL Materials 2, 046104 (2014) doi: 10.1063/1.4870536
n-type binary compound semiconductors such as InN, InAs, or In2O3 are especial because the branch-point energy or charge neutrality level lies within the conduction band. Their tendency to form a surface electron accumulation layer prevents the forma
Externí odkaz:
https://ul.qucosa.de/id/qucosa%3A12474
https://ul.qucosa.de/api/qucosa%3A12474/attachment/ATT-0/
https://ul.qucosa.de/api/qucosa%3A12474/attachment/ATT-0/
Autor:
Sauty, Mylène, Alyabyeva, Natalia, Lynsky, Cheyenne, Chow, Yi Chao, Nakamura, Shuji, Speck, James S., Lassailly, Yves, Rowe, Alistair C. H., Weisbuch, Claude, Peretti, Jacques
Publikováno v:
Physica Status Solidi (b) 260, 2200365 (2023)
Scanning tunneling electroluminescence microscopy is performed on a 3-nm-thick InGaN/GaN quantum well with x = 0.23 such that the main light emission occurs in the green. The technique is used to map the local recombination properties at a scale of ~
Externí odkaz:
http://arxiv.org/abs/2208.08298
Autor:
Sauty, Mylène, Lopes, Nicolas M. S., Banon, Jean-Philippe, Lassailly, Yves, Martinelli, Lucio, Alhassan, Abdullah, Nakamura, Shuji, Speck, James S., Weisbuch, Claude, Peretti, Jacques
Near-bandgap photoemission spectroscopy experiments were performed on p-GaN and p-InGaN/GaN photocathodes activated to negative electron affinity. The photoemission quantum yield of the InGaN samples drops by more than one order of magnitude when the
Externí odkaz:
http://arxiv.org/abs/2201.03278
Autor:
Yapparov, Rinat, Tak, Tanay, Ewing, Jacob, Nakamura, Shuji, DenBaars, Steven P., Speck, James S., Marcinkevičius, Saulius
Publikováno v:
Journal of Applied Physics; 8/28/2024, Vol. 136 Issue 8, p1-6, 6p
Publikováno v:
Phys. Rev. Applied, 17, 014033, 2022
For nitride-based blue and green light-emitting diodes (LEDs), the forward voltage $V_\text{for}$ is larger than expected, especially for green LEDs. This is mainly due to the large barriers to vertical carrier transport caused by the total polarizat
Externí odkaz:
http://arxiv.org/abs/2109.08824
Publikováno v:
Phys. Rev. Applied 16, 024054 (2021)
For nitride-based InGaN and AlGaN quantum well (QW) LEDs, the potential fluctuations caused by natural alloy disorders limit the lateral intra-QW carrier diffusion length and current spreading. The diffusion length mainly impacts the overall LED effi
Externí odkaz:
http://arxiv.org/abs/2105.09538
Autor:
Myers, Daniel, Espenlaub, Andrew, Gelzinyte, Kristina, Young, Erin, Martinelli, Lucio, Peretti, Jacques, Weisbuch, Claude, Speck, James
Publikováno v:
Applied Physics Letters, American Institute of Physics, 2020, 116 (9), pp.091102
We report on the direct measurement of hot electrons generated in the active region of blue light-emitting diodes grown by ammonia molecular beam epitaxy by electron emission spectroscopy. The external quantum efficiency of these devices is <1% and d
Externí odkaz:
http://arxiv.org/abs/2012.06227
Autor:
Hendricks, Nolan S., Islam, Ahmad E., Sowers, Elizabeth A., Williams, Jeremiah, Dryden, Daniel M., Liddy, Kyle J., Wang, Weisong, Speck, James S., Green, Andrew J.
Publikováno v:
Journal of Applied Physics; 3/7/2024, Vol. 135 Issue 9, p1-10, 10p