Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Souza, Joel Pereira de"'
Amorphization/recrystallization of buried amorphous silicon layer induced by oxygen ion implantation
Autor:
Souza, Joel Pereira de, Cima, Carlos Alberto, Fichtner, Paulo Fernando Papaleo, Boudinov, Henri Ivanov
Publikováno v:
Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
In this paper we discuss the structural modifications observed in a buried amorphous Si (α-Si) layer containing high oxygen concentration level (up to ~ 3 at.%) after being implanted at elevated temperature with 16O+ ions. For implants conducted at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3056::8bd2ed1d468418935141c30a3987cef6
Publikováno v:
Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
The electrical isolation of p-type GaAs layers doped with acceptor impurities incorporated in the Ga sublattice (Mg) or As sublattice (C) was studied using proton bombardment. It was found that practically the same proton dose is required to reach co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3056::1af09c691e77f4c57e3c10b38030fa35
Publikováno v:
Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
Carbon was implanted into GaAs at the energy of 1 MeV with doses between 131013 and 2 31015 cm22 at temperatures of 80 K, nominal room temperature (RT), and 300 °C. A markedly higher electrical activation was obtained in the samples implanted at 80
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3056::bbed1884c705793679694e1a7991c81b
Publikováno v:
Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
The accumulation of damage and the development of mechanical strain in crystalline Si (c-Si) by O and N ion implantation to doses up to 431017 cm-² at elevated temperatures have been studied using Rutherford backscattering spectrometry and high reso
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3056::879e47ce06416d6bde088db0af667d1a
Autor:
Araújo, Carlos Moysés, Almeida, J. Souza de, Pepe, Iuri Muniz, Silva, A. Ferreira da, Sernelius, Bo E., Souza, Joel Pereira de, Boudinov, Henri Ivanov
Publikováno v:
Repositório Institucional da UFBA
Universidade Federal da Bahia (UFBA)
instacron:UFBA
Universidade Federal da Bahia (UFBA)
instacron:UFBA
p. 882-887 Submitted by Santiago Fabio (fabio.ssantiago@hotmail.com) on 2013-07-23T17:27:23Z No. of bitstreams: 1 444444444444.pdf: 69589 bytes, checksum: 086d08f571e3946a20dcd2717dd6c716 (MD5) Approved for entry into archive by Rodrigo Meirelles(rod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3056::52f8e32e1cf7fd13ae283cb1f626bc47
http://www.repositorio.ufba.br/ri/handle/ri/13249
http://www.repositorio.ufba.br/ri/handle/ri/13249
Publikováno v:
Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
Damage in Si induced by irradiation with various light/medium mass ions at elevated temperatures and high doses (>=3x1016 cm-²) was studied using Rutherford backscattering spectroscopy, cross-section transmission electron microscopy, and high resolu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3056::9a4c643c0b2f6531723cf00cf1f7e62e
Autor:
Silva, Antonio Ferreira da, Sernelius, Bo E., Souza, Joel Pereira de, Boudinov, Henri Ivanov, Zheng, Hairong, Sarachik, M.P.
Publikováno v:
Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
The electrical resistivity of the shallow double-donor system Si:P,Bi, prepared by ion implantation, was investigated in the temperature range from 1.7 to 300 K. Good agreement was obtained between the measured resistivities and resistivities calcula
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3056::bb3b7d288e6a6930fdcc47d648d9826c
Publikováno v:
Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
The electrical isolation of a n-type d -doped layer embedded into undoped GaAs was studied using proton or helium ion bombardment. The threshold dose for isolation Dth of the d -doped layer was found to be '2 times higher than that predicted for thic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3056::cf50b618907077c2afdbfc068713f228
Publikováno v:
Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
The electrical isolation in n-type GaAs layers produced by proton irradiation at temperatures from 2100 to 300°C was investigated. The threshold dose for the isolation (Dth) was found almost identical for irradiation at temperatures from - 100 to 22
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3056::d5b8a03bd00f273d9a103537aa33e770
Autor:
Abramof, Eduardo G., Silva, Antonio Ferreira da, Sernelius, Bo E., Souza, Joel Pereira de, Boudinov, Henri Ivanov
Publikováno v:
Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
The Hall effect and resistivity of Si:Bi with donor concentration varying from 3.0X1017 to 1.4X1020 cm-3 were measured from room temperature down to 13 K. The samples were prepared by Bi1 implantation in Van der Pauw structures delineated in Si chips
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3056::fc791e92fe8aee6ec6fa97fd1eee2a70