Výsledky vyhledávání - "Souza, Joel Pereira de"

Amorphization/recrystallization of buried amorphous silicon layer induced by oxygen ion implantation

Autor: Souza, Joel Pereira de, Cima, Carlos Alberto, Fichtner, Paulo Fernando Papaleo, Boudinov, Henri Ivanov

Publikováno v: Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS

In this paper we discuss the structural modifications observed in a buried amorphous Si (α-Si) layer containing high oxygen concentration level (up to ~ 3 at.%) after being implanted at elevated temperature with 16O+ ions. For implants conducted at

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Electrical isolation of p-type GaAs layers by ion irradiation

Autor: Boudinov, Henri Ivanov, Coelho, Artur Vicente Pfeifer, Souza, Joel Pereira de

Publikováno v: Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS

The electrical isolation of p-type GaAs layers doped with acceptor impurities incorporated in the Ga sublattice (Mg) or As sublattice (C) was studied using proton bombardment. It was found that practically the same proton dose is required to reach co

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Electrical activation of carbon in GaAs : implantation temperature effects

Autor: Danilov, Iuri, Souza, Joel Pereira de, Murel, A.V., Pudenzi, Marcio Alberto Araujo

Publikováno v: Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS

Carbon was implanted into GaAs at the energy of 1 MeV with doses between 131013 and 2 31015 cm22 at temperatures of 80 K, nominal room temperature (RT), and 300 °C. A markedly higher electrical activation was obtained in the samples implanted at 80

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Mechanical strain and damage in Si implanted with O and N ions at elevated temperatures : evidence of ion beam induced annealing

Autor: Souza, Joel Pereira de, Suprun-Belevich, Yu., Boudinov, Henri Ivanov, Cima, Carlos Alberto

Publikováno v: Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS

The accumulation of damage and the development of mechanical strain in crystalline Si (c-Si) by O and N ion implantation to doses up to 431017 cm-² at elevated temperatures have been studied using Rutherford backscattering spectrometry and high reso

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Physical Review B

Autor: Araújo, Carlos Moysés, Almeida, J. Souza de, Pepe, Iuri Muniz, Silva, A. Ferreira da, Sernelius, Bo E., Souza, Joel Pereira de, Boudinov, Henri Ivanov

Publikováno v: Repositório Institucional da UFBA
Universidade Federal da Bahia (UFBA)
instacron:UFBA

p. 882-887 Submitted by Santiago Fabio (fabio.ssantiago@hotmail.com) on 2013-07-23T17:27:23Z No. of bitstreams: 1 444444444444.pdf: 69589 bytes, checksum: 086d08f571e3946a20dcd2717dd6c716 (MD5) Approved for entry into archive by Rodrigo Meirelles(rod

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http://www.repositorio.ufba.br/ri/handle/ri/13249

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Damage accumulation in Si crystal during ion implantation at elevated temperatures : evidence of chemical effects

Autor: Souza, Joel Pereira de, Suprun-Belevich, Yu., Boudinov, Henri Ivanov, Cima, Carlos Alberto

Publikováno v: Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS

Damage in Si induced by irradiation with various light/medium mass ions at elevated temperatures and high doses (>=3x1016 cm-²) was studied using Rutherford backscattering spectroscopy, cross-section transmission electron microscopy, and high resolu

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Impurity resistivity of the double-donor system Si:P,Bi

Autor: Silva, Antonio Ferreira da, Sernelius, Bo E., Souza, Joel Pereira de, Boudinov, Henri Ivanov, Zheng, Hairong, Sarachik, M.P.

Publikováno v: Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS

The electrical resistivity of the shallow double-donor system Si:P,Bi, prepared by ion implantation, was investigated in the temperature range from 1.7 to 300 K. Good agreement was obtained between the measured resistivities and resistivities calcula

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Electrical isolation of a silicon [Delta]-doped layer in GaAs by ion irradiation

Autor: Danilov, Iuri, Souza, Joel Pereira de, Boudinov, Henri Ivanov, Murel, A.V., Shashkin, V.I.

Publikováno v: Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS

The electrical isolation of a n-type d -doped layer embedded into undoped GaAs was studied using proton or helium ion bombardment. The threshold dose for isolation Dth of the d -doped layer was found to be '2 times higher than that predicted for thic

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Electrical isolation of n-type GaAs layers by proton bombardment : effects of the irration temperature

Autor: Souza, Joel Pereira de, Danilov, Iuri, Boudinov, Henri Ivanov

Publikováno v: Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS

The electrical isolation in n-type GaAs layers produced by proton irradiation at temperatures from 2100 to 300°C was investigated. The threshold dose for the isolation (Dth) was found almost identical for irradiation at temperatures from - 100 to 22

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Transport properties of silicon implanted with bismuth

Autor: Abramof, Eduardo G., Silva, Antonio Ferreira da, Sernelius, Bo E., Souza, Joel Pereira de, Boudinov, Henri Ivanov

Publikováno v: Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS

The Hall effect and resistivity of Si:Bi with donor concentration varying from 3.0X1017 to 1.4X1020 cm-3 were measured from room temperature down to 13 K. The samples were prepared by Bi1 implantation in Van der Pauw structures delineated in Si chips

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