Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Sourobh Raychaudhuri"'
Autor:
Dave Biegelsen, Eugene M. Chow, Sourobh Raychaudhuri, Yunda Wang, Bradley B. Rupp, Sergey Butylkov, Lara S. Crawford, Anne Plochowietz, Jeng Ping Lu
Publikováno v:
SID Symposium Digest of Technical Papers. 52:845-848
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c9b35e4091ea4c28a7ac230b93cd003
https://doi.org/10.1002/sdtp.14815
https://doi.org/10.1002/sdtp.14815
Autor:
Ping Mei, Anne Plochowietz, Matthew Shreve, Lara S. Crawford, Qian Wang, Sourobh Raychaudhuri, Yu Wang, Jeng Ping Lu, Bradley B. Rupp, Eugene M. Chow, Jamie Kalb, Sergey Butylkov, Siv Kor, Yunda Wang
Publikováno v:
SID Symposium Digest of Technical Papers. 50:349-352
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3a722eda3ecbeb1986d144fa9199834
https://doi.org/10.1002/sdtp.12928
https://doi.org/10.1002/sdtp.12928
Autor:
Yunda Wang, Sourobh Raychaudhuri, Lara S. Crawford, Jeng Ping Lu, Anne Plochowietz, David K. Biegelsen, Brad Rupp, Eugene Chow
Publikováno v:
Novel Patterning Technologies 2021.
We aim to develop the capability to rapidly sort, place, and orient micro objects into custom positions and transfer them to a final substrate eventually at costs similar to laser printers assembling toner particles onto paper. We are using programma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07a740185ecbee1d2474f685d4202654
https://doi.org/10.1117/12.2583479
https://doi.org/10.1117/12.2583479
Autor:
Yunda Wang, Jamie Kalb, Lara S. Crawford, Sourobh Raychaudhuri, Yu Wang, Bradley B. Rupp, Sergey Butylkov, Eugene M. Chow, Anne Plochowietz, Matthew Shreve, Jeng P. Lu, Qian Wang
Publikováno v:
2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII).
A deterministic micro-assembly and transfer for fine scale heterogeneous integration of micro-objects is described. With addressable electrode arrays, we use programmable directed electrostatic assembly to demonstrate micrometer scale placement and o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9810e59802616d3d119415d9e7c27db
https://doi.org/10.1109/transducers.2019.8808800
https://doi.org/10.1109/transducers.2019.8808800
Autor:
Sourobh Raychaudhuri, Sergey Butylkov, Bradley B. Rupp, JengPing Lu, Qian Wang, Eugene M. Chow, Yunda Wang, Yu Wang, Jamie Kalb, Anne Plochowietz, Matthew Shreve, Ping Mei, Lara S. Crawford
Publikováno v:
2019 IEEE 69th Electronic Components and Technology Conference (ECTC).
A deterministic, directed, parallel electrostatic assembly and transfer process is being developed to arrange chips for electronics applications. Singulated chips 10 um - 200 um in size and initially in solution, are sorted, transported and oriented
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::403160a938b1c87adc43ad0d349bfbc7
https://doi.org/10.1109/ectc.2019.00203
https://doi.org/10.1109/ectc.2019.00203
Autor:
I. Matei, Eugene M. Chow, Lara S. Crawford, Vipin P. Gupta, Patrick Y. Maeda, Bradley B. Rupp, Bert Julie A, Yu Wang, Anne Plochowietz, David K. Biegelsen, Sourobh Raychaudhuri, Rene A. Lujan, Yunda Wang, Jengping Lu, Jamie Kalb, Qian Wang
Publikováno v:
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC).
The micro-CPV concept being developed under the ARPA-E MOSAIC (Micro-scale Optimized Solar-cell Arrays with Integrated Concentration) program uses arrays of micro unit cells (or elements) such that the material usage, weight, and the required structu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::affbf00fb8a767c8938e2cfae21697a3
https://doi.org/10.1109/pvsc.2017.8366060
https://doi.org/10.1109/pvsc.2017.8366060
Autor:
Anne Plochowietz, Jeng P. Lu, Lara S. Crawford, Pat Maeda, Rene A. Lujan, Bert Julie A, Yunda Wang, Eugene M. Chow, David K. Biegelsen, Qian Wang, Jamie Kalb, Yu Wang, Ion Matei, Bradley B. Rupp, Sourobh Raychaudhuri, Daniel Davies, Gregory Burton
Publikováno v:
2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS).
A microassembly system based on electric field manipulation is described. Optical addressing of a photo-transistor array controls the position and orientation of micro-objects using dielectrophoretic and electrophoretic forces. Open-loop control is u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05898c07eb3c946153d7fca738b50ef7
https://doi.org/10.1109/transducers.2017.7994140
https://doi.org/10.1109/transducers.2017.7994140
Autor:
Gregory L. Whiting, Rene A. Lujan, Jeng Ping Lu, Scott M. Paap, Janos Veres, Vipin P. Gupta, Gregory N. Nielson, Eugene M. Chow, Sourobh Raychaudhuri, Patrick Y. Maeda, David K. Biegelsen
Publikováno v:
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC).
The micro-CPV concept uses an array of micro unit cells (or elements) such that the material usage, weight, and the required structural strength can all be scaled down favorably. Unfortunately, one of the essential unfavorable scaling factors is the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4af0ba7b3d92dd6720e11a2979f7c5a
https://doi.org/10.1109/pvsc.2015.7356280
https://doi.org/10.1109/pvsc.2015.7356280
Autor:
A.M. Conway, Sourobh Raychaudhuri, David Keogh, Peter M. Asbeck, James Chingwei Li, Dongjiang Qiao
Publikováno v:
International Journal of High Speed Electronics and Systems. 14:825-830
AlGaN/GaN HBTs with DC current gains in excess of 10 have been demonstrated; however, Makimoto et al have recently obtained a DC current gain value exceeding 2000 for a GaN/InGaN/GaN triple mesa DHBT.1,2,3 The experimental demonstration of a GaN -bas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b82c1e95e38430bcc31072e9311331f9
https://doi.org/10.1142/s0129156404002909
https://doi.org/10.1142/s0129156404002909
Publikováno v:
Nano letters. 11(6)
Silicon nanowire (SiNW) field-effect transistors (FETs) were fabricated from nanowire mats mechanically transferred from a donor growth wafer. Top- and bottom-gate FET structures were fabricated using a doped a-Si:H thin film as the source/drain (s/d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::07a7f3fc717a103f65bc35406327fd8d
https://pubmed.ncbi.nlm.nih.gov/21591655
https://pubmed.ncbi.nlm.nih.gov/21591655