Reducing the Source Resistance by Increasing the Gate Effect on Substrate for Future Terahertz HEMT Device

Autor: Soufiane Derrouiche

Publikováno v: Advances in Electrical and Electronic Engineering, Vol 19, Iss 4, Pp 341-349 (2021)

In this paper, we present the dependence of source resistance sensibility on the gate bias effect in a High Electron Mobility Transistor (HEMT) using the Drift-Diffus (D-D) model with the SILVACO Technology Computer-Aided Design (TCAD) tool. The obta

Externí odkaz: https://doaj.org/article/c6d14d0b2f834f3b84e8b6d87a6d23ae

Analytical and Physical Investigation on Source Resistance in InxGa1−xAs Quantum-Well High-Electron-Mobility Transistors

Autor: Ji-Hoon Yoo, In-Geun Lee, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Jae-Hak Lee, Dae-Hyun Kim

Publikováno v: Micromachines, Vol 14, Iss 2, p 439 (2023)

We present a fully analytical model and physical investigation on the source resistance (RS) in InxGa1−xAs quantum-well high-electron mobility transistors based on a three-layer TLM system. The RS model in this work was derived by solving the coupl

Externí odkaz: https://doaj.org/article/7b6ebff0d2ac43638d46c042c3112e56

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Definition of residual operation resource of starter batteries by way of impedance research at different service terms

Autor: Alexej Klimov, Volodymir Prichina, Den Potapov, Igor Bazilevskij, Helen Makogon, Ivanov Vladimir F, Serghij Piskun, Denys Vasylenko, Zobnin Aleksej P

Publikováno v: Сучасні інформаційні системи, Vol 3, Iss 3 (2019)
Сучасні інформаційні системи; Том 3 № 3 (2019): Сучасні інформаційні системи; 126-132
Advanced Information Systems; Vol. 3 No. 3 (2019): Advanced Information Systems; 126-132
Современные информационные системы-Sučasnì ìnformacìjnì sistemi; Том 3 № 3 (2019): Современные информационные системы; 126-132

The subject matter of the article is the physicochemical processes occurring in a battery under different conditions and operating times. The goal of the study is to develop, a methodology for estimating the residual life-span of the batteries to mak

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e8ad43420789239e68474e2f0ebd50db
http://repository.kpi.kharkov.ua/handle/KhPI-Press/43003

Translational and interdisciplinary insights into presbyacusis: A multidimensional disease

Autor: Richard A. Schmiedt, Mark A. Eckert, Morag A. Lewis, Hainan Lang, Kenneth I. Vaden, Kelly C. Harris, Karen P. Steel, Judy R. Dubno, Bradley A. Schulte

Publikováno v: Hearing Research

Highlights • Presbyacusis presents with metabolic, neural, and/or sensory phenotypes. • Reduced endocochlear potential is likely to be a key contributor to presbyacusis. • Genetic factors contribute to presbyacusis, including single-gene varian

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bcad0a887fddd6c2a7e24dc3c4080758
https://doi.org/10.1016/j.heares.2020.108109