Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Sourav Bhakta"'
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-14 (2024)
Abstract This study discusses the nonlinear optical properties of as-grown and annealed NiO thin films using the Z-scan technique utilizing the femtosecond laser pulses at a repetition rate of 100 kHz of wavelength 1030 nm with a pulse duration of 37
Externí odkaz:
https://doaj.org/article/fd8b76674b76426f848f52cca9b9c5f8
Autor:
Sourav Bhakta, Balaram Kundu
Publikováno v:
Energies, Vol 17, Iss 5, p 1016 (2024)
With the progress of modern times, automobile technology has become integral to human society. At the same time, the need for energy has also grown. In parallel, the total amount of waste energy that is liberated from different parts of the automobil
Externí odkaz:
https://doaj.org/article/7f9e067a14944f06be2c8b1dad226e22
Publikováno v:
Journal of Electronic Materials. 52:1937-1947
Autor:
Mrinal K. Sikdar, Avanendra Singh, Sourav Bhakta, Madhusmita Sahoo, S. N. Jha, D. K. Shukla, D. Kanjilal, Pratap K. Sahoo
Publikováno v:
Physical Chemistry Chemical Physics. 24:18255-18264
Intrinsic defects created by chemically inert gas (Xe) ion implantation in vertically grown ZnO nanorods are studied by optical and X-ray absorption spectroscopy (XAS). The surface defects produced due to dynamic sputtering by ion beams control the f
Autor:
Sourav Bhakta, Pratap K. Sahoo
Publikováno v:
Applied Physics A. 128
We present a detailed investigation on thickness-dependent third-order (\c{hi}^(3)) nonlinear optical properties of RF-sputtered WSe2 thin-films using ultrashort pulses centered at different excitation wavelengths. The single-beam Z-scan based invest
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cf9b495b1de73daf79f1876cd823a1fc
http://arxiv.org/abs/2204.10995
http://arxiv.org/abs/2204.10995
Autor:
Sourav Bhakta, Pratap Kumar Sahoo
Publikováno v:
SSRN Electronic Journal.
Publikováno v:
Journal of Applied Physics. 132:243101
We present an experimental investigation on third-order nonlinear optical properties of RF-sputtered WSe[Formula: see text] thin films using a single-beam [Formula: see text]-scan technique around the optical communication window in a near-infrared s
Publikováno v:
Materials Letters. 308:131153
Ion beam induced epitaxial crystallization of Si/SiO2 heterostructure has attracted significant interest in device fabrication because of its low-temperature processing. In this report, we have used 200 keV Kr+ ions to amorphize the Si/SiO2 layer at
Publikováno v:
International Journal of Medical and Biomedical Studies. 3
Background: Acute febrile encephalopathy is a common clinical syndrome across the globe with the principal cause and manifestations differing according to the demographics. In developing nations like India primary central nervous system infections is