Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Souping Yan"'
Publikováno v:
Philosophical Magazine A. 72:891-903
Boundary sliding behaviour in high-purity Pb-62% Sn containing 5 ppm of impurities has been investigated in tension at T = 422 K by measuring the individual offsets across boundaries. In the investigation, the alloy was tested at various initial stra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::198cc5029b8d4af1e5c689d4e7010e40
https://doi.org/10.1080/01418619508239942
https://doi.org/10.1080/01418619508239942
Publikováno v:
Philosophical Magazine A. 69:1017-1038
A detailed investigation of the superplastic deformation of two grades of the Pb-62 Sn eutectic (where the compositions here and subsequently are in weight per cent) was conducted under identical experimental conditions of grain size (about 8 μm), t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b6eafc505c39a29f78ed93ff73fc700
https://doi.org/10.1080/01418619408242236
https://doi.org/10.1080/01418619408242236
A Transmission X-ray Microscope (TXM) for Non-destructive 3D Imaging of ICs at Sub-100 nm Resolution
Autor:
David Trapp, Suneeta Neogi, Christopher Kelly, Casey Bennet, Frederick William Duewer, Kenneth W. Nill, Souping Yan, Markus Kuhn, David Scott, Peter Coon, Steve Wang, Wenbing Yun, Shashidar Kamath, Alan Lyon
Publikováno v:
International Symposium for Testing and Failure Analysis.
Xradia has developed a laboratory table-top transmission x-ray microscope, TXM 54-80, that uses 5.4 keV x-ray radiation to nondestructively image buried submicron structures in integrated circuits with at better than 80 nm 2D resolution. With an inte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::343206f184a2dda2f0ddd654810acd6a
https://doi.org/10.31399/asm.cp.istfa2002p0227
https://doi.org/10.31399/asm.cp.istfa2002p0227
Autor:
Patrick A. Kearney, Souping Yan, John Richards, Guojing Zhang, Pei-yang Yan, Jenn Chow, Patrick Kofron
Publikováno v:
SPIE Proceedings.
In this paper, the Extreme Ultra Violet (EUV) mask absorber repair using focused ion beam (FIB) is investigated. It is well known that focused ion beam repair for the opaque defect removal can easily cause both damage and gallium staining or contamin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c69f9e0d04446412d13123c0098f03e3
https://doi.org/10.1117/12.332828
https://doi.org/10.1117/12.332828
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