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Surfactant-Mediated Epitaxial Growth of Single-Layer Graphene in an Unconventional Orientation on SiC

Autor: Bocquet, F. C., Lin, Y. -R., Franke, M., Samiseresht, N., Parhizkar, S., Soubatch, S., Lee, T. -L., Kumpf, C., Tautz, F. S.

Publikováno v: Phys. Rev. Lett. 125, 106102 (2020)

We report the use of a surfactant molecule during the epitaxy of graphene on SiC(0001) that leads to the growth in an unconventional orientation, namely $R0^\circ$ rotation with respect to the SiC lattice. It yields a very high-quality single-layer g

Externí odkaz: http://arxiv.org/abs/1809.07958

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Approaching ideal graphene: The structure of hydrogen-intercalated graphene on 6H-SiC(0001)

Autor: Sforzini, J., Nemec, L., Denig, T., Stadtmüller, B., Lee, T. -L., Kumpf, C., Soubatch, S., Starke, U., Rinke, P., Blum, V., Bocquet, F. C., Tautz, F. S.

Publikováno v: Phys. Rev. Lett. 114, 106804 (2015)

We measure the adsorption height of hydrogen-intercalated quasi-free-standing monolayer graphene on the (0001) face of 6H silicon carbide by the normal incidence x-ray standing wave technique. A density functional calculation for the full ($6 \sqrt{3

Externí odkaz: http://arxiv.org/abs/1411.4753

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Quantification of finite-temperature effects on adsorption geometries of $\pi$-conjugated molecules

Autor: Mercurio, G., Maurer, R. J., Liu, W., Hagen, S., Leyssner, F., Tegeder, P., Meyer, J., Tkatchenko, A., Soubatch, S., Reuter, K., Tautz, F. S.

Publikováno v: Phys. Rev. B 88, 035421 (2013)

The adsorption structure of the molecular switch azobenzene on Ag(111) is investigated by a combination of normal incidence x-ray standing waves and dispersion-corrected density functional theory. The inclusion of non-local collective substrate respo

Externí odkaz: http://arxiv.org/abs/1405.3670

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