Zobrazeno 1 - 10
of 35
pro vyhledávání: '"Sou-Chi Chang"'
Autor:
José P. B. Silva, Ruben Alcala, Uygar E. Avci, Nick Barrett, Laura Bégon-Lours, Mattias Borg, Seungyong Byun, Sou-Chi Chang, Sang-Wook Cheong, Duk-Hyun Choe, Jean Coignus, Veeresh Deshpande, Athanasios Dimoulas, Catherine Dubourdieu, Ignasi Fina, Hiroshi Funakubo, Laurent Grenouillet, Alexei Gruverman, Jinseong Heo, Michael Hoffmann, H. Alex Hsain, Fei-Ting Huang, Cheol Seong Hwang, Jorge Íñiguez, Jacob L. Jones, Ilya V. Karpov, Alfred Kersch, Taegyu Kwon, Suzanne Lancaster, Maximilian Lederer, Younghwan Lee, Patrick D. Lomenzo, Lane W. Martin, Simon Martin, Shinji Migita, Thomas Mikolajick, Beatriz Noheda, Min Hyuk Park, Karin M. Rabe, Sayeef Salahuddin, Florencio Sánchez, Konrad Seidel, Takao Shimizu, Takahisa Shiraishi, Stefan Slesazeck, Akira Toriumi, Hiroshi Uchida, Bertrand Vilquin, Xianghan Xu, Kun Hee Ye, Uwe Schroeder
Publikováno v:
APL Materials, Vol 11, Iss 8, Pp 089201-089201-70 (2023)
Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to the forefront of ultralow-power electronic systems. Maximizing the potential application in memory devices or supercapacitors
Externí odkaz:
https://doaj.org/article/bdc8e7ac6d8a4918bcd408390bfda1b5
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 4, Iss 2, Pp 44-49 (2018)
In this paper, the transient behavior of a ferroelectric (FE)-metal–oxide–semiconductor (MOS) capacitor is theoretically investigated with a series resistor. It is shown that compared with a conventional high-k dielectric MOS capacitor, a signifi
Externí odkaz:
https://doaj.org/article/ce0d708d79e34e6ba1b34dd7ed4926f3
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 3, Pp 56-64 (2017)
Physical phenomena, underlying operation of negative capacitance field-effect transistors (NCFETs), are treated within a unified simulation framework. The framework incorporates the Landau mean-field treatment of free energy of a ferroelectric (FE) a
Externí odkaz:
https://doaj.org/article/6e0942d88ac84718b236e575a64e7ea7
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 2, Pp 1-9 (2016)
A new digital device scheme based on the magnetoelectric coupling and automotion of the magnetic domain wall is proposed. A single device is composed of a ferromagnetic wire and two ferroelectric capacitors served as the input and the output. It is s
Externí odkaz:
https://doaj.org/article/e6dcf91e7dfb48d69a96b458bc06f65a
Publikováno v:
IEEE Transactions on Electron Devices. :1-7
Autor:
Sou-Chi Chang, Kisung Chae, Mihaela I. Popovici, Chia-Ching Lin, Saima Siddiqui, I-Cheng Tung, Jasper Bizindavyi, Bernal Granados Alpizar, Nazila Haratipour, Matthew Metz, Jack Kavalieros, Gouri S. Kar, Andrew Kummel, Kyeongjae Cho, Uygar E. Avci
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Autor:
Nazila Haratipour, Sou-Chi Chang, Shriram Shivaraman, Christopher Neumann, Yu-Ching Liao, Bernal G Alpizar, I-Cheng Tung, Hai Li, Vachan Kumar, Brian Doyle, Sarah Atanasov, Jason Peck, Nafees Kabir, Gary Allen, Thomas Hoff, Adedapo Oni, Sourav Dutta, Tristan Tronic, Anandi Roy, Fatih Hamzaoglu, Robert Bristol, Matthew Metz, Ian Young, Jack Kavalieros, Uygar Avci
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Autor:
Sou-Chi Chang, Uygar E Avci
Publikováno v:
2022 IEEE Silicon Nanoelectronics Workshop (SNW).
Autor:
Sou-Chi Chang, Uygar E. Avci, Dongqi Zheng, Nazila Haratipour, Junkang Li, Mengwei Si, Zhuocheng Zhang, Peide D. Ye
Publikováno v:
ACS Nano. 15:5689-5695
A ferroelectric semiconductor junction is a promising two-terminal ferroelectric device for nonvolatile memory and neuromorphic computing applications. In this work, we propose and report the experimental demonstration of asymmetric metal/α-In2Se3/S
Autor:
Sourav Dutta, Yu-Ching Liao, Sou-Chi Chang, Ian A. Young, Azad Naeemi, Dmitri E. Nikonov, Sasikanth Manipatruni
Publikováno v:
IEEE Transactions on Magnetics. 56:1-9
The switching dynamics of a single-domain BiFeO3 nanoscale nanoisland is investigated by studying the dynamics of polarization and Neel vector. We use the Landau–Khalatnikov (LK) equation to describe the evolution of the ferroelectric polarization,