Zobrazeno 1 - 10
of 71
pro vyhledávání: '"Sorina Lazanu"'
Autor:
Sorina Iftimie, H. Stroescu, Toma Stoica, Magdalena Lidia Ciurea, Mariuca Gartner, C. Palade, A. Slav, Mariana Braic, Valentin S. Teodorescu, Nicolae Catalin Zoita, Dan Buca, I. Dascalescu, Sorina Lazanu, Ana-Maria Lepadatu
Publikováno v:
ACS Applied Materials & Interfaces. 12:56161-56171
The development of short-wave infrared (SWIR) photonics based on GeSn alloys is of high technological interest for many application fields, such as the Internet of things or pollution monitoring. The manufacture of crystalline GeSn is a major challen
Autor:
Stefan Antohe, Magdalena Lidia Ciurea, Valentin S. Teodorescu, Mariana Braic, Sorina Iftimie, Ionel Stavarache, Sorina Lazanu, C. Palade, Constantin Logofatu, A. Slav, I. Dascalescu, Toma Stoica, Ana M. Lepadatu, Dan Buca, Florin Comanescu
Publikováno v:
ACS Applied Nano Materials. 2:3626-3635
Detection in short-wave infrared (SWIR) has become a very stringent technology requirement for developing fields like hyperspectral imaging or climate changes. In a market dominated by III–V materi...
Autor:
Adrian, Slav, Ioana, Dascalescu, Ana-Maria, Lepadatu, Catalin, Palade, Nicolae C, Zoita, Hermine, Stroescu, Sorina, Iftimie, Sorina, Lazanu, Mariuca, Gartner, Dan, Buca, Valentin S, Teodorescu, Magdalena L, Ciurea, Mariana, Braic, Toma, Stoica
Publikováno v:
ACS applied materialsinterfaces. 12(50)
The development of short-wave infrared (SWIR) photonics based on GeSn alloys is of high technological interest for many application fields, such as the Internet of things or pollution monitoring. The manufacture of crystalline GeSn is a major challen
The nature of dark matter is still an open problem. The simplest assumption is that gravity is the only force coupled certainly to dark matter and thus the micro black holes could be a viable candidate. We investigated the possibility of direct detec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::017e675f6c8c2ffe76e7f7788d4012f7
http://arxiv.org/abs/2006.09974
http://arxiv.org/abs/2006.09974
Autor:
Ana-Maria Lepadatu, Sorina Lazanu, V. S. Teodorescu, Toma Stoica, C. Palade, Magdalena Lidia Ciurea, A. Slav
Publikováno v:
Applied Surface Science. 428:698-702
Trilayer memory capacitors with Ge nanocrystals (NCs) floating gate in HfO 2 were obtained by magnetron sputtering deposition on p-type Si substrate followed by rapid thermal annealing at relatively low temperature of 600 °C. The frequency dispersio
Autor:
I. Lalau, A. Slav, Sorina Lazanu, O. Cojocaru, T. Stoica, C. Palade, I. Dascalescu, Ana-Maria Lepadatu, Magdalena Lidia Ciurea
Publikováno v:
2019 International Semiconductor Conference (CAS).
The VIS-SWIR photosensing properties of Ge and GeSi NCs embedded in TiO2 films are investigated. For this, we deposit GeTiO2 and GeSiTiO2 films, respectively by magnetron sputtering and then we perform rapid thermal annealing (RTA) for Ge NCs and GeS
Publikováno v:
Journal of Physics and Chemistry of Solids. 93:27-32
The strain in Si containing group-V impurities is a topical subject of study due to its potential applications in quantum computing. In this paper we study 209Bi implanted Si concerning the correlation between the strain produced by stopped Bi ions a
Autor:
Valentin S. Teodorescu, Ana-Maria Lepadatu, Magdalena Lidia Ciurea, C. Palade, Sorina Lazanu, Mariana Braic, Constantin Logofatu, A.V. Maraloiu, A. Kiss, A. Slav
Publikováno v:
Scripta Materialia. 113:135-138
The strong correlation between morphology and charge storage properties of HfO 2 /Ge/HfO 2 /Si trilayer structures was evidenced. The morphology of structures deposited by magnetron sputtering and electron beam evaporation was tailored by rapid therm
Autor:
Magdalena Lidia Ciurea, Valentin S. Teodorescu, C. Palade, A. Slav, O. Cojocaru, M. T. Sultan, Toma Stoica, H. G. Svavarsson, Sorina Lazanu
Publikováno v:
2018 International Semiconductor Conference (CAS).
GeSi NCs / Ti0 2 multilayers with enhanced photocurrent properties were prepared and studied. Multilayers of Ti0 2 /(GeSi/Ti0 2 )x2 /Si-p were deposited by magnetron sputtering and annealed by RTA at 700 °C for GeSi NCs formation. A post-annealing h
Autor:
Magdalena Lidia Ciurea, T. Stoica, Ana-Maria Lepadatu, C. Palade, Ionel Stavarache, I. Dascalescu, Sorina Lazanu, A. Slav, O. Cojocaru
Publikováno v:
2018 International Semiconductor Conference (CAS).
Trilayer MOS capacitors gate HfO 2 / floating gate of Ge nanocrystals in HfO 2 / tunnel HfO 2 / Si substrate were prepared in the aim to be used for the detection of ionizing radiation. Magnetron sputtering and rapid thermal annealing were used for t