Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Sorin Dinculescu"'
Autor:
Driss Kenfaui, Zarel Valdez-Nava, Lionel Laudebat, Marie-Laure Locatelli, Céline Combettes, Vincent Bley, Sorin Dinculescu, Christophe Tenailleau, Pascal Dufour, Sophie Guillemet-Fritsch
Publikováno v:
Science and Technology of Advanced Materials, Vol 23, Iss 1, Pp 735-751 (2022)
A wide band gap semiconductor power module can operate at higher voltages as compared with its traditional silicon counterpart. However, its insulating system undergoes stronger electric fields at the triple point between the ceramic substrate, the m
Externí odkaz:
https://doaj.org/article/dac2ff76caa24450b15e6bc5a3b880f1
Publikováno v:
2022 IEEE Electrical Insulation Conference (EIC).
Autor:
Thomas Hahner, Patrick Rybski, Severine Le Roy, Clara Lagomarsini, Sorin Dinculescu, Gilbert Teyssedre
Publikováno v:
2021 IEEE International Conference on the Properties and Applications of Dielectric Materials (ICPADM)
2021 IEEE International Conference on the Properties and Applications of Dielectric Materials (ICPADM), Jul 2021, Johor Bahru, Malaysia. pp.294-297, ⟨10.1109/ICPADM49635.2021.9494003⟩
2021 IEEE International Conference on the Properties and Applications of Dielectric Materials (ICPADM), Jul 2021, Johor Bahru, Malaysia. pp.294-297, ⟨10.1109/ICPADM49635.2021.9494003⟩
International audience; The perspective of increasing on board power on aircrafts leads to reconsider cable technologies, among which insulation processing. In this work, the thermal stability of three materials, Polyimide, Polytetrafluoroethylene an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d82735b6ae9a7e6dd99b14d14e02c065
https://hal.archives-ouvertes.fr/hal-03326448
https://hal.archives-ouvertes.fr/hal-03326448
Autor:
Kemas M Tofani, Ngapuli I. Sinisuka, Kremena Makasheva, Jean-Pascal Cambronne, Sorin Dinculescu
Publikováno v:
2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC)
2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC), Oct 2018, Portland, United States. pp.1-4, ⟨10.1109/NMDC.2018.8605855⟩
2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC), Oct 2018, Portland, United States. pp.1-4, ⟨10.1109/NMDC.2018.8605855⟩
International audience; Better understanding of the electrical behavior of miniaturized electrical devices is largely supported by the need to reduce losses and to prevent operational failure caused by electrical breakdown or electrical discharge. In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ae2adc38509ef054e963114345825c0d
https://hal.archives-ouvertes.fr/hal-02324370
https://hal.archives-ouvertes.fr/hal-02324370
Publikováno v:
Scopus-Elsevier
In order to take the full advantage of the high-temperature SiC and GaN operating power devices, package materials able to withstand high-temperature storage and large thermal cycles are required. However, a survey of the commercially available silic
Temperature measurement method for dielectric layer characterization in a high voltage vacuum prober
Publikováno v:
2017 International Symposium on Electrical Insulating Materials (ISEIM).
During the dielectric characterization of an insulating material the temperature of the sample is of great importance for understanding the underlying behaviors. In the specific context of a vacuum prober some difficulties may arise when direct measu
Publikováno v:
Scopus-Elsevier
In aeronautics, the concept of the “more electrical aircraft” emerged during the recent years thanks to the evolution of power electronics, the increase of power density, which has considerably spread the use of power converters for Adjustable Sp
Autor:
Sombel Diaham, Sorin Dinculescu, M. Bechara, Cong-Duc Pham, Pierre Bidan, Rabih Khazaka, Marie-Laure Locatelli
Publikováno v:
IEEE Transactions on Power Electronics. 29:2281-2288
High-temperature power electronics represent an increasing demand. Higher power density or severe ambient temperature applications become the trend, while silicon carbide components with 250-300 °C Tjmax are emerging. Among materials used in high-vo
Autor:
Jean-Pascal Cambronne, G. T. Anuraga, Sorin Dinculescu, Ngapuli I. Sinisuka, Kremena Makasheva
Publikováno v:
2016 IEEE Nanotechnology Materials and Devices Conference (NMDC)
2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Oct 2016, Toulouse, France. pp.1-2, ⟨10.1109/NMDC.2016.7777102⟩
2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Oct 2016, Toulouse, France. pp.1-2, ⟨10.1109/NMDC.2016.7777102⟩
International audience; Knowledge on the breakdown voltage behavior in microgap distances at different pressures, from few tens of Pa up to atmospheric pressure, is extremely useful for designing electric power subsystem components in aircraft applic
Autor:
Sombel Diaham, Marie-Laure Locatelli, Samir Zelmat, Thierry Lebey, Sorin Dinculescu, M. Decup
Publikováno v:
IEEE Transactions on Dielectrics and Electrical Insulation. 17:18-27
Changes in the dielectric breakdown field of polyimide (PI) films have been studied from 25 to 400°C under dc ramps. Both the area (from 0.0707 to 19.635 mm2) and thickness (from 1.4 to 6.7 ?m) dependences of the dielectric breakdown field have been