Zobrazeno 1 - 10
of 127
pro vyhledávání: '"Sordan, Roman"'
Autor:
Ribero-Figueroa, Xiomara, Pacheco-Sanchez, Anibal, Mansouri, Aida, Kumar, Pankaj, Habibpour, Omid, Zirath, Herbert, Sordan, Roman, Pasadas, Francisco, Jiménez, David, Torres-Torres, Reydezel
Publikováno v:
IEEE Transactions on Electron Devices, Sep. 2023
Graphene field-effect transistors exhibit negligible transconductance under two scenarios: for any gate-to-source voltage when the drain-to-source voltage is set to zero, and for an arbitrary drain-to-source voltage provided that the gate-to-source v
Externí odkaz:
http://arxiv.org/abs/2309.08282
Autor:
Session, Deric, Mehrabad, Mahmoud Jalali, Paithankar, Nikil, Grass, Tobias, Eckhardt, Christian J., Cao, Bin, Forero, Daniel Gustavo Suárez, Li, Kevin, Alam, Mohammad S., Watanabe, Kenji, Taniguchi, Takashi, Solomon, Glenn S., Schine, Nathan, Sau, Jay, Sordan, Roman, Hafezi, Mohammad
A fundamental requirement for quantum technologies is the ability to coherently control the interaction between electrons and photons. However, in many scenarios involving the interaction between light and matter, the exchange of linear or angular mo
Externí odkaz:
http://arxiv.org/abs/2306.03417
Autor:
Cao, Bin, Grass, Tobias, Gazzano, Olivier, Patel, Kishan Ashokbhai, Hu, Jiuning, Müller, Markus, Huber, Tobias, Anzi, Luca, Watanabe, Kenji, Taniguchi, Takashi, Newell, David, Gullans, Michael, Sordan, Roman, Hafezi, Mohammad, Solomon, Glenn
Publikováno v:
ACS Nano 2022
Photocurrent (PC) measurements can reveal the relaxation dynamics of photo-excited hot carriers beyond the linear response of conventional transport experiments, a regime important for carrier multiplication. In graphene subject to a magnetic field,
Externí odkaz:
http://arxiv.org/abs/2110.01079
Autor:
Carey, Tian, Arbab, Adrees, Anzi, Luca, Bristow, Helen, Hui, Fei, Bohm, Sivasambu, Wyatt-Moon, Gwenhivir, Flewitt, Andrew, Wadsworth, Andrew, Gasparini, Nicola, Kim, Jong Min, Lanza, Mario, McCulloch, Iain, Sordan, Roman, Torrisi, Felice
Air-stable semiconducting inks suitable for complementary logic are key to create low-power printed integrated circuits (ICs). High-performance printable electronic inks with two-dimensional materials have the potential to enable the next generation
Externí odkaz:
http://arxiv.org/abs/2011.12359
Autor:
Polyzos, Ioannis, Bianchi, Massimiliano, Rizzi, Laura, Koukaras, Emmanuel, Parthenios, John, Papagelis, Konstantinos, Sordan, Roman, Galiotis, Costas
Publikováno v:
Nanoscale, 2015, 7, 13033-13042
2D crystals, such as graphene, exhibit the higher strength and stiffness of any other known man-made or natural material. So far, this assertion has been primarily based on modelling predictions and on bending experiments in combination with pertinen
Externí odkaz:
http://arxiv.org/abs/1607.05528
Autor:
Plačkić, Aleksandra, Neubert, Tilmann J., Patel, Kishan, Kuhl, Michel, Watanabe, Kenji, Taniguchi, Takashi, Zurutuza, Amaia, Sordan, Roman, Balasubramanian, Kannan
Publikováno v:
Small; 5/23/2024, Vol. 20 Issue 21, p1-9, 9p
Akademický článek
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Autor:
Carrion, Enrique A., Serov, Andrey Y., Islam, Sharnali, Behnam, Ashkan, Malik, Akshay, Xiong, Feng, Bianchi, Massimiliano, Sordan, Roman, Pop, Eric
We measure top-gated graphene field effect transistors (GFETs) with nanosecond-range pulsed gate and drain voltages. Due to high-k dielectric or graphene imperfections, the drain current decreases ~10% over time scales of ~10 us, consistent with char
Externí odkaz:
http://arxiv.org/abs/1404.0020
Autor:
Kapaklis, Vassilios, Grammatikopoulos, Spyridon, Sordan, Roman, Miranda, Alessio, Traversi, Floriano, von Känel, Hans, Trachylis, Dimitrios, Poulopoulos, Panagiotis, Politis, Constantin
Publikováno v:
J. Nanosc. & Nanotech. 10, 6056 (2010)
The orientation of the lamellae formed by the phase separation of symmetric diblock copolymer thin films is strongly affected by the wetting properties of the polymer blocks with respect to the substrate. On bare silicon wafers the lamellae of polyst
Externí odkaz:
http://arxiv.org/abs/1004.0813
Publikováno v:
Appl. Phys. Lett. 94, 223312 (2009)
The operation of a digital logic inverter consisting of one p- and one n-type graphene transistor integrated on the same sheet of monolayer graphene is demonstrated. The type of one of the transistors was inverted by moving its Dirac point to lower g
Externí odkaz:
http://arxiv.org/abs/0904.2745