Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Sophia Rogalskyj"'
Autor:
Kathleen Dunn, Gert J. Leusink, Amber Palka, Angelique Raley, Dina H. Triyoso, Sophia Rogalskyj, Hunter Frost, Robert D. Clark, Cory Wajda, Nicholas Joy
Publikováno v:
2020 IEEE International Interconnect Technology Conference (IITC).
Metal-insulator-metal (MIM) stacks, though simple in design, are the backbone device for resistive random access memories (ReRAM) and, as such, play a vital role in emerging memory technologies. In this work, we characterize the impact of Ar, Ar/N2,
Autor:
Hisashi Higuchi, Christopher Cole, Dina H. Triyoso, Cory Wajda, Sophia Rogalskyj, Gert J. Leusink, Angelique Raley, Steven Consiglio, Danny Newman, Robert D. Clark, Kandabara Tapily, Takahiro Hakamata
Publikováno v:
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
In this work, we presented the Hf-Zr system as a case study of materials that were evaluated in the past and are now receiving renewed interest due to its potential use in artificial intelligence (AI). A historical overview of Hf-Zr research and its
Publikováno v:
2018 International Integrated Reliability Workshop (IIRW).
Accelerated electromigration (EM) testing generally utilizes a constant direct current (DC). However, in operation or “real life” the metal interconnect is commonly exposed to an alternating current (AC) or pulsed direct current (PDC). If at all,