Výsledky vyhledávání - "Sophia Arnauts"

Surface Chemistry and Nanoscale Wet Etching of Group IV Semiconductors in Acidic H2O2 Solutions

Autor: Stefan De Gendt, Graniel Harne A. Abrenica, Mikhail V. Lebedev, Sophia Arnauts, Thomas Mayer, Dennis H. van Dorp

Publikováno v: Solid State Phenomena. 314:66-70

In this atomic-scale study on technologically relevant group IV semiconductors, Ge and SiGe, we relate surface chemistry, in particular the nature of surface oxides, to wet etching kinetics. ICP-MS quantification of Ge in HCl solution containing H2O�

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7020a45162a1fab810c865db4863a7c0
https://doi.org/10.4028/www.scientific.net/ssp.314.66

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Atomic-scale investigations on the wet etching kinetics of Ge versus SiGe in acidic H2O2 solutions: a post operando synchrotron XPS analysis

Autor: Nazaninsadat Bazzazian, Mathias Fingerle, Clement Porret, Hugo Bender, Dennis H. van Dorp, Mikhail V. Lebedev, Stefan De Gendt, Wolfram Calvet, Graniel Harne A. Abrenica, Thomas Mayer, Sophia Arnauts

Publikováno v: Journal of Materials Chemistry C. 8:10060-10070

In this atomic-scale study on wet etching, the importance of surface chemistry, in particular the nature of the surface oxides, is demonstrated for technologically relevant group IV semiconductors, Ge and SiGe. Elemental quantification of Ge in hydro

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ebea6986b2a594d6ffc94777edccb99e
https://doi.org/10.1039/d0tc02763d

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Nanoscale Etching of GaAs and InP in Acidic H2O2 Solution: A Striking Contrast in Kinetics and Surface Chemistry

Autor: Thierry Conard, Johan Meersschaut, Sophia Arnauts, Mikko Laitinen, Dennis H. van Dorp, John J. Kelly, Timo Sajavaara, Frank Holsteyns

Publikováno v: Solid State Phenomena. 282:48-51

In this study of nanoscale etching for state-of-the-art device technology the importance of the nature of the surface oxide, is demonstrated for two III-V materials. Etching kinetics for GaAs and InP in acidic solutions of hydrogen peroxide are strik

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3714eeb457b3668a3cc97214a1d931f5
https://doi.org/10.4028/www.scientific.net/ssp.282.48

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(Invited) Atomic-Scale Investigations on the Wet Etching of Group IV Semiconductors in Acidic H2O2 Solution: The Case Ge Versus Si-Ge

Autor: Graniel Harne A. Abrenica, Mikhail V. Lebedev, Stefan De Gendt, Efrain A. Altamirano Sanchez, Thomas Mayer, Dennis H. van Dorp, Sophia Arnauts

Publikováno v: ECS Meeting Abstracts. :1029-1029

Over the decades, Si-based complementary metal–oxide semiconductor (CMOS) technology has challenged the semiconductor industry in improving device performance while maintaining the scaling requirements. However, the use of the group IV semiconducto

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::92db97141d4324f285427cc029cbc4a2
https://doi.org/10.1149/ma2021-01311029mtgabs

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Towards Atomic-Layer-Scale Processing of High Mobility Channel Materials in Acidic Solutions for N5 and N7 Technology Nodes

Autor: Graniel Harne A. Abrenica, Sophia Arnauts, Frank Holsteyns, Dennis H. van Dorp

Publikováno v: Solid State Phenomena. 255:51-54

In this work the etching kinetics of Ge (100) is studied in acidic solutions containing and oxidizing agent. It is shown that the etch rate in the low etch-rate range is controlled by the concentration of the acid, oxidizing agent and the hydrodynami

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f58c8207962d1f7a660db175fd58c332
https://doi.org/10.4028/www.scientific.net/ssp.255.51

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Wet Chemical Processing of Ge in Acidic H2O2 Solution: Nanoscale Etching and Surface Chemistry

Autor: Mathias Fingerle, Mikhail V. Lebedev, Graniel Harne A. Abrenica, Thomas Mayer, Dennis H. van Dorp, Sophia Arnauts, Stefan De Gendt, Frank Holsteyns

Publikováno v: ECS Journal of Solid State Science and Technology. 9:084002

Herein, we investigate wet-chemical etching of Ge (100) in acidic H2O2 solutions for technologically advanced device processing. Nanoscale etching kinetics data were provided by inductively coupled plasma mass spectrometry (ICP-MS) measurements. Rota

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f9d2e9e602d3a15a8f33c1ac609030b4
https://doi.org/10.1149/2162-8777/abb1c5

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Epitaxial Defects in Nanoscale InP Fin Structures Revealed by Wet-Chemical Etching

Autor: Hugo Bender, Andreas Schulze, Sophia Arnauts, Manuel Mannarino, Wilfried Vandervorst, Dennis H. van Dorp, C Merckling, Alain Moussa

Publikováno v: Crystals; Volume 7; Issue 4; Pages: 98

In this work, we report on wet-chemical defect revealing in InP fin structures relevant for device manufacturing. Both HCl and HBr solutions were explored using bulk InP as a reference. A distinct difference in pit morphology was observed between the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::38a7715b8b7f3f70f09670a94877673e

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(Invited) Wet-Chemical Etching of III-V Semiconductors: Towards Atomic-Layer-Scale Processing

Autor: Dennis H. van Dorp, Sophia Arnauts, John Kelly, Frank Holsteyns

Publikováno v: ECS Meeting Abstracts. :1227-1227

Recent developments in device technology resulted in an upsurge of interest in III-V compound semiconductors. These include improved fabrication techniques for flexible electronic devices,[1,2] and epitaxial integration of various III-V channel mater

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::783020e6b6b37d5d62b5fa9b2e7ce4be
https://doi.org/10.1149/ma2019-01/24/1227

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