Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Soonkon Kim"'
Autor:
Hyojung Kim, Soonkon Kim, Jongmin Yoo, Changyong Oh, Bosung Kim, Hyuncheol Hwang, Jungmin Park, Pyungho Choi, Jangkun Song, Kiju Im, Byoungdeog Choi
Publikováno v:
AIP Advances, Vol 11, Iss 3, Pp 035312-035312-5 (2021)
In this paper, the dependence of threshold voltage (Vth) changes to amorphous-indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) under positive bias light illumination (PBIS) on the height of the conduction band offset was studied. Using
Externí odkaz:
https://doaj.org/article/0c99a7a58f9b4b879b3c4e2ccf27ad2c
Publikováno v:
Journal of Electrical Engineering & Technology. 16:1027-1033
This study investigates the effect of the gate SiO2 thickness (80, 100, and 130 nm) deposited by plasma enhanced chemical vapor deposition on the interface and reliability characteristics of low-temperature polycrystalline silicon thin film transisto
Autor:
Bohyeon Jeon, Pyungho Choi, Byoungdeog Choi, Kihwan Kim, Hyo Jung Kim, Junehwan Kim, Jong Woo Park, Minjun Song, Jang-Kun Song, Jungmin Park, Soonkon Kim
Publikováno v:
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE. 20:474-478
In this paper, we introduce a method enabling faster and more innovative analysis of the channel characteristics of amorphous indium-gallium- zinc oxide (a-IGZO) thin film transistors (TFTs) manufactured on flexible substrates through electrical prop
Autor:
Hyo-Jung Kim, Ki-Hwan Kim, Yongjo Kim, Minjun Song, Youngmi Cho, Byungdeog Choi, Hyunguk Cho, Soonkon Kim
Publikováno v:
SID Symposium Digest of Technical Papers. 51:1338-1341
Autor:
Jang-Kun Song, Jongwoo Park, Minjun Song, Pyungho Choi, Hyo-Jung Kim, Soonkon Kim, Byoungdeog Choi, Hyuncheol Hwang, Ki-Ju Im, Taeyoung Khim, Sangmin Lee
Publikováno v:
IEEE Electron Device Letters. 41:737-740
In this paper, we propose a novel mechanism for the $\text{V}_{{\text {th}}}$ shift of amorphous-indium gallium zinc oxide (a-IGZO) thin film transistors under negative bias illumination stress (NBIS). Three kinds of IGZO TFTs with different gate die
Publikováno v:
IEEE Electron Device Letters. 40:1427-1430
The charge trapping characteristics of the high-k laminated traps with different thickness ratios were investigated in order to improve the distribution of threshold voltage and the charge loss problems in 3D NAND flash memories with TCAT structure.
Autor:
Soonkon Kim, Jong-Min Lee, Jun-Yong Noh, Jung-Hwan Oh, Pyungho Choi, Byoungdeog Choi, Soo-Ho Shin, Hyoungsub Kim
Publikováno v:
IEEE Transactions on Electron Devices. 65:4839-4845
In the development of dynamic random access memory (DRAM) with a device size of 20 nm or less, the leakage current of a capacitor with high-k dielectrics is one of the main factors causing the failure of a device. To reduce the failure rate of the de
Autor:
Dohyun Beak, Byoungdeog Choi, Soonkon Kim, Nara Lee, Jongwoo Park, Gaeun Lee, Junehwan Kim, Hyo-Jung Kim, Pyungho Choi, Jang-Kun Song
Publikováno v:
Journal of nanoscience and nanotechnology. 21(3)
Use of thinner oxides to improve the operating speed of a complementary metal-oxidesemiconductor (CMOS) device causes serious gate leakage problems. Leakage current of the dielectric analysis method has I–V, C–V, and charge pumping, but the proce
Autor:
Nayoung Lee, Kwangjun Koo, Hyunki Kim, Byoungdeog Choi, Soonkon Kim, Pyungho Choi, Jaehyeong Lee
Publikováno v:
Journal of Nanoscience and Nanotechnology. 18:5899-5903
Hafnium-silicate (HfSiO4, (HfO2)x(SiO2)1-x) and hafnium-zirconate (HfZrO4, (HfO2)x(ZrO2)1-x) films were employed as a gate dielectric to enhance the electrical properties of pure HfO2. (HfO2)x(SiO2)1-x and (HfO2)x(ZrO2)1-x films were formed onto p-Si
Autor:
Younghwan Hyeon, Kwangjun Koo, Pyungho Choi, Minsoo Kim, Byoungdeog Choi, Jeong Hyun Lee, Kiwon Lim, Soonkon Kim, Sangsub Kim
Publikováno v:
Journal of Nanoscience and Nanotechnology. 18:6005-6009
In this study, the charge polarity of aluminum fluoride (AlF3) as a function of varying thickness (tAlF3 = 20, 35, 50, 65, and 80 nm) was discussed. AlF3 films were deposited onto p-Si wafers via electron beam sputtering. Thickness dependent charge p