Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Soon-yeon Park"'
Autor:
Won-Sok Lee, Duhyun Lee, Sang Ho Jeon, Son Juho, D. Minn, Dae-Woong Kang, Sung-Gi Yang, Y. Aoki, J. Jang, Ki-chul Kim, Hyun-Chul Park, Jung-hyeon Kim, Soon-yeon Park, S. Kim, J. H. Lee, J.M. Park, B.S. Suh, M. Kim, Chung-woo Kim, Jung-Hyoung Lee, Kyung-Hoon Min, A.-S. Ryu, Young-Wug Kim, S.Y. Lee
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
This paper presents design challenges and solutions for the fifth generation (5G) phased-array transceiver ICs in millimeter-wave (MMW) frequency bands. A 28nm bulk CMOS device technology is selected to integrate multiple RF phased-array elements in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d86ad2928f3bbabca4604eaa3f43d36b
https://doi.org/10.1109/iedm13553.2020.9371948
https://doi.org/10.1109/iedm13553.2020.9371948
Autor:
D. K. Sohn, Y.K. Bae, Y.D. Lim, Yohan Kim, J.G. Hong, C. Ryou, Soon-yeon Park, C.G. Koh, Jae Gon Lee, Jung-Chak Ahn, S. Hyun, Byung-chan Lee, Sangjoo Lee, Yang-Soo Son, D.H. Cha, C.L. Cheng, Sung-dae Suk, S.W. Nam, H.-J. Cho, J.S. Yoon, Won-Jun Jang, M. Sadaaki, Ming Li, S.H. Hong, Wouns Yang, Sang-pil Sim, Dong-Won Kim, S. Choi, Jung-In Hong, Won-Cheol Jeong, B. U. Yoon, Hwa-Sung Rhee, Min-Sang Kim, Chilhee Chung, Daphnee Hui Lin Lee, Sang-Bom Kang, Kang-ill Seo, Hee-Soo Kang
Publikováno v:
2011 International Electron Devices Meeting.
A 20 nm logic device technology for low power and high performance application is presented with the smallest contacted-poly pitch (CPP) of minimal 80 nm ever reported in bulk Si planar device. We have achieved nFET and pFET drive currents of 770 µA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54cdf33871f7ca3ae9bad66959de4b4c
https://doi.org/10.1109/iedm.2011.6131556
https://doi.org/10.1109/iedm.2011.6131556
Publikováno v:
The Journal of bone and joint surgery. British volume. 93(10)
We examined the differences in post-operative functional disability and patient satisfaction between 56 patients who underwent a lumbar fusion at three or more levels for degenerative disease (group I) and 69 patients, matched by age and gender, who
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::516457ae8b6e74b3480b7bd77768efc4
https://pubmed.ncbi.nlm.nih.gov/21969442
https://pubmed.ncbi.nlm.nih.gov/21969442
Autor:
A.T. Kim, Hong-jae Shin, M.Y. Kim, H. K. Kang, S.W. Nam, Y.J. Moon, Suk-Joo Lee, Tae-Kyung Kim, S.M. Choi, Young-Jin Wee, I.R. Kim, J.W. Hwang, B.S. Suh, J.E. Ku, Jae-Duk Lee, Won Ho Choi, G.P. Suh, K. W. Lee, Jung-hyeon Kim, Hyeon-deok Lee, I.H. Oh, A.M. Lee, Nae-In Lee, K.-K. Park, Soon-yeon Park, J.Y. Maeng
Publikováno v:
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..
We present the effect of mechanical strength and residual stress of dielectric barrier on electromigration performance in Cu/low-k interconnects. It has been discovered that mechanical strength and residual stress of dielectric capping layer have a g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17e857fa1202c6ab089b66acb91a486b
https://doi.org/10.1109/iedm.2004.1419343
https://doi.org/10.1109/iedm.2004.1419343
Autor:
Yong-kuk Jeong, Soon-yeon Park, Jae-Hyun Joo, Sung-Choon Lee, Seok-jun Won, Joo-Tae Moon, Cha-young Yoo, Sung-tae Kim, Wan-Don Kim
Publikováno v:
International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).
RIR(Ru/Crystalline-Ta/sub 2/O/sub 5/Ru) capacitor with concave structure was studied for the application into multigigabit-scale DRAM device. In this work, several novel technologies were successfully developed to solve current issues in the fabricat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d0c9ec13a1a8e08a16ab85f4871e96c
https://doi.org/10.1109/iedm.2001.979480
https://doi.org/10.1109/iedm.2001.979480
Publikováno v:
Japanese Journal of Applied Physics. 43:2235
We attempted to evaluate the role of tunneling oxide in a magnetic tunneling junction (MTJ) cell using scanning probe microscopy (SPM). In particular, we focused on the variation in the thickness uniformity of aluminum oxide thin film, thereby correl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f169e2525210de264eed5e69e3293396
https://doi.org/10.1143/jjap.43.2235
https://doi.org/10.1143/jjap.43.2235