Zobrazeno 1 - 10
of 71
pro vyhledávání: '"Soon-Young Oh"'
Autor:
Talgat Bainazarov, Alounso A. Gilzene, Taeyeon Kim, Gerardo R. López, Lawrence Louis, Soon-young Oh, Emma K. Taylor
Publikováno v:
Educational Administration Quarterly. 58:810-829
Members of the Educational Administration Quarterly (EAQ) internal editorial team took a critical look at the publication record of our journal with respect to epistemological plurality over the past 10 years. Our goal was to identify international p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5db06e306b2c91d6edd9100f3fd6efc6
https://doi.org/10.1177/0013161x221136729
https://doi.org/10.1177/0013161x221136729
Autor:
Byung Hoon Kim, Soon-Young Oh, Han Young Yu, Won G Hong, Yong Ju Yun, Yark Yeon Kim and Hae Jin Kim
Publikováno v:
Science and Technology of Advanced Materials, Vol 11, Iss 6, p 065003 (2010)
Humidity-dependent current–voltage (I–V) characteristics of Pd-doped vanadium pentoxide nanowires (Pd-VONs) were investigated. Electrical quadruple hysteresis (QH) was observed and attributed to the large amount of water molecules adsorbed on the
Externí odkaz:
https://doaj.org/article/42f550b7f7924e849e5c5455fc964b74
Publikováno v:
Journal of Loss Prevention in the Process Industries. 26:904-907
Many chemicals are being developed with the growth of science technology. Such chemicals bring many advantages to humans but also cause many social problems because of the hazards of the materials. Therefore, it is necessary to have a system which id
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b3bfb2e9fb9e1c0197b5b0288df29be
https://doi.org/10.1016/j.jlp.2012.12.001
https://doi.org/10.1016/j.jlp.2012.12.001
Autor:
Soon-Young Oh, Cheol-Jae Seong
Publikováno v:
Phonetics and Speech Sciences. 4:117-127
This research reports the prosodic characteristics (including articulation speech rate, pause characteristics, duration) of children with cochlear implants with reference to those of children with normal hearing. Subjects are 8-to 10-year-old childre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::204c91bb035fd594051ba0d7677660d3
https://doi.org/10.13064/ksss.2012.4.4.117
https://doi.org/10.13064/ksss.2012.4.4.117
Publikováno v:
Security and Communication Networks. 4:316-328
An inelastic flow is a flow with an inelastic rate, i.e., the rate is fixed, and it cannot be dynamically adjusted to traffic and load condition as in elastic flows like TCP. Real time, interactive sessions, and video/audio streaming are typical exam
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c81ac6925b682d548b97a2a71db3467
https://doi.org/10.1002/sec.183
https://doi.org/10.1002/sec.183
Autor:
Chang Hee Kim, Soon-Young Oh, Hae Jin Kim, Yark Yeon Kim, Byung Hoon Kim, Han Young Yu, Sang Moon Lee, Won G. Hong, Yong Ju Yun
Publikováno v:
International Journal of Hydrogen Energy. 35:1300-1304
The high-pressure H 2 sorption isotherms of polyaniline–vanadium pentoxide nanocomposites (PANI–VONC) have been performed at liquid nitrogen temperature. A large increment of hydrogen storage capacity occurs in PANI–VONC (∼1.8 wt%) in contras
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c3f8ea8860eded4e95a152a7a9dd7c3
https://doi.org/10.1016/j.ijhydene.2009.11.089
https://doi.org/10.1016/j.ijhydene.2009.11.089
Publikováno v:
Journal of the Korean Physical Society. 54:1798-1801
High-performance three-dimensional (3-D) stacked poly-Si complementary metal-oxidesemiconductor (CMOS) inverters with a high-quality laser-crystallized channel were fabricated. Lowtemperature crystallization methods of an a-Si lm using excimer-laser
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfeac3dd6909a2994635197834828cce
https://doi.org/10.3938/jkps.54.1798
https://doi.org/10.3938/jkps.54.1798
Publikováno v:
Microelectronic Engineering. 85:1395-1398
The Schottky barrier heights for electrons and holes of erbium-silicided Schottky diodes were extracted from the current-voltage-temperature characteristics in reverse bias condition. The effective barrier heights increased with temperature. The high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::021b71933a5e4019486987fc93b39c0d
https://doi.org/10.1016/j.mee.2007.12.019
https://doi.org/10.1016/j.mee.2007.12.019
Publikováno v:
Microelectronic Engineering. 85:1206-1209
Three-dimensionally stacked CMOS inverters were fabricated by using the poly-Si thin film transistor (TFT) with hafnium-oxide (HfO"2) gate dielectric and Pt gate electrode. For fabrication of 3-D stacked CMOS inverters consist of poly-Si NMOS/interla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::654ea82f1020b9e19a9a6473049325dd
https://doi.org/10.1016/j.mee.2007.12.026
https://doi.org/10.1016/j.mee.2007.12.026
Autor:
Won-Jae Lee, Soon-Young Oh, Jin-Suk Wang, Soon-Yen Jung, Shi-Guang Li, Yeong-Cheol Kim, Ying-Ying Zhang, Zhun Zhong, Hi-Deok Lee, Ga-Won Lee
Publikováno v:
Transactions on Electrical and Electronic Materials. 9:47-51
In this paper, thermal stability of Nickel silicide formed on p-type silicon wafer using Ni-V alloy film was studied. As compared with pure Ni, Ni-V shows better thermal stability. The addition of Vanadium suppresses the phase transition of NiSi to $
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6fcac17b74b9b437aaf77212f2b1cd0
https://doi.org/10.4313/teem.2008.9.2.047
https://doi.org/10.4313/teem.2008.9.2.047