Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Soon-Moon Jung"'
Autor:
Jaehong Park, Taejung Lee, Woojin Rim, Geum-Jong Bae, Hoonki Kim, Taeyeong Kim, Jong-Hoon Jung, Dong-Won Kim, S. D. Kwon, Hakchul Jung, Hyung-Tae Kim, Taejoong Song, Soon-Moon Jung, Sanghoon Baek, Keun Hwi Cho, Jongwook Kye
Publikováno v:
ISSCC
Advanced technologies help to improve SRAM performance via recent transistor breakthroughs [1], which allow SRAM designers to focus on handling metal resistance by alleviating device performance impediments. Since SRAM margins are more vulnerable to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39061cc23ae105d92382e833936d1627
https://doi.org/10.1109/isscc42613.2021.9365988
https://doi.org/10.1109/isscc42613.2021.9365988
Autor:
Hyun-Ki Yoon, Young Chang An, Halim Park, Wooyeol Maeng, Hag-Ju Cho, Sungchul Kim, Jinhyeok Song, S. D. Kwon, Sunny Park, Ilhyeon Choi, Eui-Young Jeong, Huichul Shin, Soon-Gyu Lee, Soon-Moon Jung, Bong Ho You, Mingeun Song
Publikováno v:
2017 Symposium on VLSI Technology.
RF-CMOS process employing 14nm FinFET technology is introduced for the first time and its RF performance is characterized. Compared with its 28nm planar counterpart, the optimized 14nm RF FinFET consumes 63% of DC power with 53% of device active area
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7f81ca53008458759a4cd9917686ec8
https://doi.org/10.23919/vlsit.2017.7998155
https://doi.org/10.23919/vlsit.2017.7998155
Publikováno v:
IEEE Transactions on Electron Devices. 57:474-481
For the first time, the smallest 3-D stacked six-transistor (6T) static-random-access-memory (SRAM) cell technology is successfully developed by using a laser crystallization process to grow perfect single-crystal Si layers on the amorphous dielectri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc4546035f681696dfca6e74544e6aa8
https://doi.org/10.1109/ted.2009.2037368
https://doi.org/10.1109/ted.2009.2037368
Autor:
Hoosung Cho, Doo-gon Kim, Ki-Tae Park, Yeong-Taek Lee, Hansoo Kim, Soon-Moon Jung, Jae-Hoon Jang, Soonwook Hwang, Myounggon Kang, Youngwook Jeong, Yong-Il Seo, Chang-Hyun Kim
Publikováno v:
IEEE Journal of Solid-State Circuits. 44:208-216
A 3-dimensional double stacked 4 gigabit multilevel cell NAND flash memory device with shared bitline structure have successfully developed. The device is fabricated by 45 nm floating-gate CMOS and single-crystal Si layer stacking technologies. To su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b32f938fde8d4137c27a41345287899c
https://doi.org/10.1109/jssc.2008.2006437
https://doi.org/10.1109/jssc.2008.2006437
Autor:
Deok-Hyung Lee, Rak-Hwan Kim, S.Y. Yoo, Jeonghyun Baek, Jung-A Choi, K.-M. Chung, E. S. Jung, Il-Goo Kim, Ki-Yeol Park, Soon-Moon Jung, Soomin Ahn, Byung-ki Kim, J.H. Hwang, Jihoon Cha, JiYeon Ku, Eun-hong Lee, S. S. Paak, Y. W. Cho, Min-Sang Kim, D. Park, J.S. Yoon, Jae-Hak Kim, T. Matsuda, Hyoji Choi, Hye-Lan Lee, Sungho Park, Jisu Kim, B. U. Yoon, H. K. Kang, Sang-Don Nam, Jun-Bum Lee, Nae-In Lee
Publikováno v:
Publons
CVD-Ru represents a critically important class of materials for BEOL interconnects that provides Cu reflow capability. The results reported here include superior gap-fill performance, a solution for plausible integration issues, and robust EM / TDDB
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::22f458c520ee4ee669c5ab0f102c828b
https://doi.org/10.1109/iedm.2014.7047153
https://doi.org/10.1109/iedm.2014.7047153
Publikováno v:
2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
Photo diode (PD) well potential of 4-Tr CMOS image sensor (CIS) is changed according to the axial direction of off-axis wafer slicing which minimizes the channeling effect of ion implantation process. Channeling causes an incomplete charge transfer i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f409bbc7696569329654629caef8a3e
https://doi.org/10.1109/icsict.2014.7021272
https://doi.org/10.1109/icsict.2014.7021272
Publikováno v:
IEEE Transactions on Electron Devices. 47:1673-1677
Charged spacers in the field emission display (FED) are analyzed with the Monte Carlo method. The spacer is made of an insulator, which has generally a high secondary electron emission property. Under electron bombardment, the secondary electron emis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4cd5b0aef49d55ea7f26374c3d67260b
https://doi.org/10.1109/16.853047
https://doi.org/10.1109/16.853047
Publikováno v:
Journal of The Electrochemical Society. 145:3963-3966
We describe a novel, solid-phase crystallization method for synthesizing large-grained, textured silicon films on amorphous substrates at relatively low processing temperatures ( 10 μm) for films crystallized by the SSC method. Hall measurements con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b0a24caa0f1a2ae84a7cff44b7c594b
https://doi.org/10.1149/1.1838899
https://doi.org/10.1149/1.1838899
Publikováno v:
Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1b2069aaee9e991c2ae8c9bdc2bc1c7
https://doi.org/10.7567/ssdm.2011.i-4-4l
https://doi.org/10.7567/ssdm.2011.i-4-4l
Autor:
Kitae Park, Myounggon Kang, Yeong-Taek Lee, Han-soo Kim, Hoosung Cho, Youngwook Jeong, Soonwook Hwang, Yong-ll Seo, Jae-Hoon Jang, Won-Seong Lee, Chang-Hyun Kim, Doo-gon Kim, Soon-Moon Jung
Publikováno v:
ISSCC
Recently, 3-dimensional (3D) memories have regained attention as a potential future memory solution featuring low cost, high density and high performance. We present a 3D double stacked 4Gb MLC NAND flash memory device with shared bitline structure,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2968e55b5c5d0e4823abfa1d8dd4231e
https://doi.org/10.1109/isscc.2008.4523281
https://doi.org/10.1109/isscc.2008.4523281