Zobrazeno 1 - 10
of 206
pro vyhledávání: '"Soon-Ku Hong"'
Autor:
Wonkee Chae, Minkyung Jeong, Donggil Lee, Jongbeom Lee, Dong Won Chun, Soo Yeol Lee, Soon-Ku Hong, Su Hyeon Kim, Jun Hyun Han
Publikováno v:
Journal of Materials Research and Technology, Vol 24, Iss , Pp 9476-9490 (2023)
6061 aluminum (Al) alloys were asymmetrically rolled to apply shear deformation, and the effects of pre/post-aging treatment on the mechanical properties and texture evolution were analyzed. The texture was analyzed using electron backscattered diffr
Externí odkaz:
https://doaj.org/article/31ae7196e1d0461d94ec2950550a6d35
Publikováno v:
IUCrJ, Vol 8, Iss 3, Pp 462-467 (2021)
The compound α-Ga2O3 is an ultra-wide-bandgap semiconductor and possesses outstanding properties such as a high breakdown voltage and symmetry compared with other phases. It has been studied for applications in high-performance power devices. Howeve
Externí odkaz:
https://doaj.org/article/44e5c897db9d43c1a684d115035f4a35
Autor:
Seung-Jae Lee, Seong Ran Jeon, Sung Hoon Jung, Young-Jun Choi, Hae-Gon Oh, Hae-Yong Lee, Min-Ki Kwon, Soon-Ku Hong
Publikováno v:
physica status solidi (a).
Publikováno v:
IUCrJ, Vol 8, Iss 3, Pp 462-467 (2021)
IUCrJ
IUCrJ
Low dislocation density of α-Ga2O3 grown on conical frustum-patterned sapphire substrate (CF-PSS) has been studied. The threading dislocation propagation path of α-Ga2O3 on CF-PSS was observed.
The compound α-Ga2O3 is an ultra-wide-bandgap se
The compound α-Ga2O3 is an ultra-wide-bandgap se
Publikováno v:
Korean Journal of Materials Research. 30:399-405
Autor:
Im Gyu Yeo, Soon-Ku Hong, Tai Hee Eun, Han Suk Seo, Seung Seok Lee, Jang Yul Kim, Myong Chuel Chun
Publikováno v:
Materials Science Forum. 1004:51-56
We investigated the relation between the nucleation of dislocations and the lattice misfits by nitrogen concentration difference between seed and grown crystal during the initial stage of growth. 4H-SiC single crystals were grown with various nitroge
Publikováno v:
Korean Journal of Materials Research. 29:579-585
In this study, we investigate the effect of Al/N source ratios and growth rates on the growth and structural properties of AlN films on c-plane sapphires by plasma-assisted molecular beam epitaxy. Both growth rates and Al/N ratios affect crystal qual
Publikováno v:
Thin Solid Films. 682:93-98
Gallium oxide films were grown with nitrogen on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. Nitrogen and oxygen gases supplied simultaneously through one plasma source were used to grow gallium oxide films with nitrogen. Al
Publikováno v:
Applied Surface Science. 481:819-824
Single crystal pseudo-wurtzite ZnSnN2 films were grown successful for the first time with [ 11 2 ¯ 0 ] growth direction. The ZnSnN2 films were grown as single crystal on sapphire substrate using ZnO buffers. There was no formation of an orthorhombic
Publikováno v:
ECS Journal of Solid State Science and Technology. 11:035008
We investigated the growth and properties of Ga2O3 films on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). Growth parameters generally affect the structure and properties of films. In growing Ga2O3 films on sapphire su