Direct laser-enabled graphene oxide-Reduced graphene oxide layered structures with micropatterning.

Autor: Fatt Teoh, Hao, Tao, Ye, Soon Tok, Eng, Wei Ho, Ghim, Haur Sow, Chorng

Publikováno v: Journal of Applied Physics; Sep2012, Vol. 112 Issue 6, p064309, 6p

Ge0.97Sn0.03 p-channel metal-oxide-semiconductor field-effect transistors: Impact of Si surface passivation layer thickness and post metal annealing.

Autor: Guo, Pengfei, Han, Genquan, Gong, Xiao, Liu, Bin, Yang, Yue, Wang, Wei, Zhou, Qian, Pan, Jisheng, Zhang, Zheng, Soon Tok, Eng, Yeo, Yee-Chia

Publikováno v: Journal of Applied Physics; Jul2013, Vol. 114 Issue 4, p044510-044510-8, 1p

Thickness-Induced Metal-Insulator Transition in Sb-doped SnO2 Ultrathin Films: The Role of Quantum Confinement.

Autor: Ke C; Microelectronics Centre, School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798., Zhu W; Microelectronics Centre, School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798., Zhang Z; Institute of Materials Research &Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602., Soon Tok E; Department of Physics, National University of Singapore, Science Drive 3, Singapore 119260., Ling B; Microelectronics Centre, School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798., Pan J; Institute of Materials Research &Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602.; Department of Physics, National University of Singapore, Science Drive 3, Singapore 119260.

Publikováno v: Scientific reports [Sci Rep] 2015 Nov 30; Vol. 5, pp. 17424. Date of Electronic Publication: 2015 Nov 30.