Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Soon Mok Ha"'
Autor:
Jeong-ho Yeo, Boo-Hyun Ham, Jin-Seok Heo, Hoyeon Kim, Soon Mok Ha, Joon-Soo Park, Suk-Woo Nam
Publikováno v:
Microelectronic Engineering. 110:66-69
In semiconductor manufacturing below 45nm node, immersion lithography is serious technique to increase depth of focus (DOF) at obtainable apertures and to improve resolution with apertures higher than one. However, immersion environment between wafer
Publikováno v:
Sensors and Actuators A: Physical. 155:278-284
Dielectric elastomers have shown remarkably large actuation strain and energy density. A wide range of novel applications have been conceptualized, but commercial devices have not materialized due to the high rates of failure during high-strain actua
Autor:
Zhibin Yu, Qibing Pei, Matthew Senesky, Soon Mok Ha, Dongjuan Xi, Tuling Lam, James Biggs, Wei Yuan, Liangbing Hu, Bin Chen, George Grüner
Publikováno v:
Advanced Materials. 20:621-625
Certain dielectric elastomers such as the 3M VHB 4910 acrylic adhesive films have exhibited electrically induced strains as high as 380 % in area expansion. The calculated maximum specific energy density of 3.4 J g and maximum stress of 8 MPa are att
Publikováno v:
Smart Materials and Structures. 16:S280-S287
Mechanical prestrain is generally required for most electroelastomers to obtain high electromechanical strain and high elastic energy density. However, prestrain can cause several serious problems, including a large performance gap between the active
Publikováno v:
Advanced Materials. 18:887-891
Publikováno v:
Thin Solid Films. :575-578
The effects of microstructure on the electrical properties of Ln 2 Ti 2 O 7 (Ln=La, Nd) films were investigated by depositing on Pt/Ti/Si and Y 2 O 3 /Si substrates using the sol–gel and spin-coating method. The films were crystallized at 800 °C i
Publikováno v:
Ferroelectrics. 259:283-288
PZT films were sputter-deposited from a target containing 50 % excess PbO on Pt/Ti/SiO2/Si substrate at 550 °C. In site of the symmetric Pt/PZT/Pt capacitor structure, fatigue behavior showed asymmetric degradation and leakage current at TE and BE s
Publikováno v:
Thin Solid Films. :525-530
The effect of excess Pb and O content on the formation of PZT films with perovskite phase and their electrical properties has been investigated. PZT films were sputter-deposited from a target containing 50% excess Pb and O on Pt/Ti/SiO 2 /Si substrat
Publikováno v:
Thin Solid Films. :531-535
Cation-substituted PZT thin films are more desirable for ferroelectric memory applications due to their lower coercive field, higher resisitivity and lower dielectric memory-aging rate compared to PZT thin films. The resulting effect of cation-substi
Publikováno v:
SPIE Proceedings.
In recent semiconductor manufacturing, hardmask is unavoidable requirement to further transfer the patterning from thin photoresist to underlayer. While several types of hardmask materials have been investigated, amorphous carbon has been attractive