Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Soo-Ik Jang"'
Autor:
Soo-Ik Jang, Hyun Min Jang
Publikováno v:
Ceramics International. 26:421-425
Thin films of Ba 0.5 Sr 0.5 TiO 3 (BST) were fabricated on RuO 2 /Ru/SiO 2 /Si substrates by spin coating multicomponent sol prepared using metal alkoxides. To analyze the surface effect of the dielectric film on the leakage current characteristics r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7896a51030da67351f17746093901ee6
https://doi.org/10.1016/s0272-8842(99)00073-5
https://doi.org/10.1016/s0272-8842(99)00073-5
Autor:
Soo-Ik Jang, Hyun Min Jang
Publikováno v:
Thin Solid Films. 330:89-95
Thin films of BaxSr1−xTiO3 (BST, with x=0.5) were fabricated on a RuO2/Ru/SiO2/Si substrate by the spin coating of the multicomponent sol prepared using metal alkoxides. Boron alkoxide was intentionally introduced to establish a better microstructu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bff9626fbd5957863fc993eb0916728
https://doi.org/10.1016/s0040-6090(98)00560-4
https://doi.org/10.1016/s0040-6090(98)00560-4
Publikováno v:
Journal of Materials Research. 12:1327-1334
Chemically homogeneous BaxSr1−xTiO3 (BST with x = 0.6) multicomponent sol was synthesized using barium oxide, strontium chloride, and Ti-alkoxide (titanium isopropoxide) as starting materials. Acetylacetone (AcAc) was introduced as a chelating agen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6663780747f863f77bf62f96d32182f
https://doi.org/10.1557/jmr.1997.0181
https://doi.org/10.1557/jmr.1997.0181
Autor:
Sang-Bom Kang, Joo-Tae Moon, In Sang Jeon, Si-Young Choi, U-In Chung, Kab-Jin Nam, Dong Chan Kim, Byung-Il Ryu, Hye-Lan Lee, Ji-Hyun Kim, Soo-Ik Jang, Sang-Jin Hyun, Sug-hun Hong, Hye-min Kim
Publikováno v:
2007 IEEE Symposium on VLSI Technology.
For the first time, we have successfully integrated HfSiON gate dielectric to DRAM and obtained excellent data retention time. Lower gate leakage current and better mobility of HfSiON than plasma nitrided oxide resulted in a 22% smaller propagation d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::162ab452f25fe75ebe824dfbc11216b3
https://doi.org/10.1109/vlsit.2007.4339685
https://doi.org/10.1109/vlsit.2007.4339685
Autor:
Seong Geon Park, Taek Soo Jeon, Yu Gyun Shin, Hag-Ju Cho, Joo Tae Moon, Sang-Yong Kim, Beom Jun Jin, Hye Lan Lee, U-In Chung, Soo Ik Jang, Hong-bae Park, Sang Bom Kang
Publikováno v:
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..
In this work, HfSiON gate dielectric is integrated for the first time in dual gate oxide of DRAM with recess channel arrary transistor (RCAT) and W/poly-Si gate for the development of sub-60nm DRAM technology. No degradation of cell transistor charac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2c2a52f96bfc06328ee61cdfdcd53ed
https://doi.org/10.1109/iedm.2004.1419204
https://doi.org/10.1109/iedm.2004.1419204
Autor:
Suk-Jin Chung, Cha-young Yoo, Soo-Ik Jang, Kyu-Ho Cho, Jin Yong Kim, Joo-Tae Moon, Byeong-Yun Nam, Jae-soon Lim, Ki-chul Kim, U-In Chung, Byung-Il Ryu, Han-jin Lim, Kyung-In Choi, Sung-ho Han, Kwang-Hee Lee, Jin-Il Lee, Jeong-Hee Chung, Sung-Tae Kim
Publikováno v:
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..
As a new alternative for the DRAM capacitor of 50 nm generation, Ru/Insulator/TiN (RIT) capacitor with the lowest Toxeq of 0.85 nm has been successfully developed for the first time. TiO/sub 2//HfO/sub 2/ and Ta/sub 2/O/sub 5//HfO/sub 2/ double-layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4758eddec777464dd4a6d10c658b5fb
https://doi.org/10.1109/iedm.2004.1419308
https://doi.org/10.1109/iedm.2004.1419308
Autor:
Young-Woo Kweon, Dae-Young Park, Ilgweon Kim, Tae-Seok Kwon, Tae-Un Youn, Se-Kyeong Choi, Nam-Sung Kim, Soo-ik Jang, Joo-Seog Park
Publikováno v:
Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8900fc660f617259a4e3bf50aacf7ae1
https://doi.org/10.7567/ssdm.2002.p3-10
https://doi.org/10.7567/ssdm.2002.p3-10
Autor:
Seong Geon Park, Beom Jun Jin, Hye Lan Lee, Hong Bae Park, Taek Soo Jeon, Hag-Ju Cho, Sang Yong Kim, Soo Ik Jang, Sang Bom Kang, Yu Gyun Shin, U-In Chung, Joo Tae Moon
Publikováno v:
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004; 2004, p515-518, 4p
Autor:
Sangjin Hyun, Hye-Min Kim, Hye-Lan Lee, Kab-Jin Nam, Sug-Hun Hong, Dong-Chan Kim, Jihyun Kim, Soo-Ik Jang, In Sang Jeon, Sangbom Kang, Siyoung Choi, U-In Chung, Joo-Tae Moon, Byung-Il Ryu
Publikováno v:
2007 IEEE Symposium on VLSI Technology; 2007, p184-185, 2p