Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Soo Seok Kang"'
Autor:
Sang-Hyeon Kim, Ilpyo Roh, Jae-Hoon Han, Dae-Myeong Geum, Seong Kwang Kim, Soo Seok Kang, Hang-Kyu Kang, Woo Chul Lee, Seong Keun Kim, Do Kyung Hwang, Yun Heub Song, Jin Dong Song
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 42-48 (2021)
In this study, we demonstrated low leakage current and high mobility thin body (In)GaSb p-FETs. Through the optimization of the V/III ratio during the epitaxial growth, we achieved a highly insulating bottom Al0.95Ga0.05Sb barrier, which eliminates t
Externí odkaz:
https://doaj.org/article/e14f70b92ca14adebb389839bfcd79c5
Publikováno v:
ACS Omega, Vol 3, Iss 11, Pp 14562-14566 (2018)
Externí odkaz:
https://doaj.org/article/b3251657a65f4c57bc8b5e345427f6ce
Autor:
Rafael Jumar Chu, Geunhwan Ryu, Seungwan Woo, Tae Soo Kim, Daehwan Jung, Soo Seok Kang, Jae-Hoon Han, Won Jun Choi, Namgi Hong, In Hwan Lee
Publikováno v:
ACS Applied Materials & Interfaces. 13:55648-55655
Current infrared thermal image sensors are mainly based on planar firm substrates, but the rigid form factor appears to restrain the versatility of their applications. For wearable health monitorin...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efd5736afa5e210f1e88ad000f602d70
https://doi.org/10.1021/acsami.1c14687
https://doi.org/10.1021/acsami.1c14687
Autor:
Seong Keun Kim, Dae-Myeong Geum, Hang-Kyu Kang, Soo Seok Kang, Do Kyung Hwang, Jae-Hoon Han, Seong Kwang Kim, Sanghyeon Kim, Woo Chul Lee, Yun-Heub Song, Jin Dong Song, Il-Pyo Roh
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 42-48 (2021)
In this study, we demonstrated low leakage current and high mobility thin body (In)GaSb p-FETs. Through the optimization of the V/III ratio during the epitaxial growth, we achieved a highly insulating bottom Al0.95Ga0.05Sb barrier, which eliminates t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9e770011f321351cc20af37b96e9f927
https://ieeexplore.ieee.org/document/9264257/
https://ieeexplore.ieee.org/document/9264257/
Autor:
Joonyeon Chang, Hyeyoun Chang, Seoung-Hwan Park, Doyeol Ahn, Dong Seob Kim, Ju Young Lim, S. Ko, S. J. Park, Jin Dong Song, Soo Seok Kang, S. H. Yang
Publikováno v:
Scientific Reports, Vol 10, Iss 1, Pp 1-8 (2020)
Scientific Reports
Scientific Reports
Cuprous halides, characterized by a direct wide band-gap and a good lattice matching with Si, is an intrinsic p-type I-VII compound semiconductor. It shows remarkable optoelectronic properties, including a large exciton binding energy at room tempera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fdd1b8ce55709d6816b1441bf95afd7b
http://link.springer.com/article/10.1038/s41598-020-61021-2
http://link.springer.com/article/10.1038/s41598-020-61021-2
Autor:
Seungwan, Woo, Geunhwan, Ryu, Soo Seok, Kang, Tae Soo, Kim, Namgi, Hong, Jae-Hoon, Han, Rafael Jumar, Chu, In-Hwan, Lee, Daehwan, Jung, Won Jun, Choi
Publikováno v:
ACS applied materialsinterfaces. 13(46)
Current infrared thermal image sensors are mainly based on planar firm substrates, but the rigid form factor appears to restrain the versatility of their applications. For wearable health monitoring and implanted biomedical sensing, transfer of activ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::097f0199b0bbb21d20f1f0acf01b5071
https://pubmed.ncbi.nlm.nih.gov/34779602
https://pubmed.ncbi.nlm.nih.gov/34779602
Autor:
Ji Hoon Kang, Cheol-Hwee Shim, HyeYoung Hyun, Dae-Myeong Geum, Min-Chul Park, Soo Seok Kang, Kisung Kwak, Jin Dong Song, Sanghyeon Kim, Won Jun Choi, Suk-Ho Choi
Publikováno v:
Scientific Reports, Vol 9, Iss 1, Pp 1-8 (2019)
Scientific Reports
Scientific Reports
Short-wave infrared (SWIR) detectors and emitters have a high potential value in several fields of applications, including the internet of things (IoT) and advanced driver assistance systems (ADAS), gas sensing. Indium Gallium Arsenide (InGaAs) photo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3bfc3194e5ebe45f15af533a6c2f6e27
http://link.springer.com/article/10.1038/s41598-019-49300-z
http://link.springer.com/article/10.1038/s41598-019-49300-z
Autor:
Namgi Hong, Won Jun Choi, Daehwan Jung, Ki Jun Yu, Rafael Jumar Chu, Soo Seok Kang, Jae-Hoon Han, Geunhwan Ryu
Publikováno v:
Optics express. 28(24)
We demonstrate flexible GaAs photodetector arrays that were hetero-epitaxially grown on a Si wafer for a new cost-effective and reliable wearable optoelectronics platform. A high crystalline quality GaAs layer was transferred onto a flexible foreign
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b5b3aee338e8d99b9ea5197b03b419b0
https://pubmed.ncbi.nlm.nih.gov/33379747
https://pubmed.ncbi.nlm.nih.gov/33379747
Autor:
Hyoyoung Lee, Gyea Young Kwak, Jong Min Kim, Soo Seok Kang, Sung Kim, Hanleem Lee, Kyung Joong Kim, Suk-Ho Choi, Dong Hee Shin, Ju Hwan Kim, Ha Seung Lee, Chan Wook Jang, Sang Woo Seo
Publikováno v:
Nano Energy. 43:124-129
To overcome small- and indirect-bandgap nature of crystalline bulk Si, a lot of efforts have been made to utilize Si quantum dots (SQDs) in optoelectronic devices. By controlling the size of Si quantum dots (SQDs), it is possible to vary the energy b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::405b82c71f11d4a77c7e836e0ac005d0
https://doi.org/10.1016/j.nanoen.2017.11.017
https://doi.org/10.1016/j.nanoen.2017.11.017
Publikováno v:
Solid-State Electronics. 176:107942
We report a comparative study of metamorphic InAs p-i-n photodetectors epitaxially grown on GaAs and Si by molecular beam epitaxy. Linearly graded InAlAs buffers were employed to bridge the high lattice mismatch between InAs and Si. Quantitative meas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6a6b09cb6609b529f3f8da543ee1a5b
https://doi.org/10.1016/j.sse.2020.107942
https://doi.org/10.1016/j.sse.2020.107942