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pro vyhledávání: '"Soo Gil Jachun"'
Autor:
Youngseok Kwon, Jin-hyock Kim, Sujin Chae, Youngho Lee, Soo Gil Jachun, Jachun Ku, Yongsun Sohn, Sungki Park, Deuk-Sung Choi, Jaechul Om
Publikováno v:
Journal of the Korean Physical Society. 59:466-469
We investigated the influence of phase-change materials on the device performance for low-power and high-speed phase-change random access memory (PCRAM). The Ge-doped SbTe (Ge-ST) alloy was used as a phase-change material and was compared with the co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::000077f48f3aa2c741d33a666e4a3f2b
https://doi.org/10.3938/jkps.59.466
https://doi.org/10.3938/jkps.59.466
