Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Soo Cheol Kang"'
Autor:
Tae Jin Yoo, Hyeon Jun Hwang, Soo Cheol Kang, Sunwoo Heo, Ho-In Lee, Young Gon Lee, Hokyung Park, Byoung Hun Lee
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 424-428 (2021)
Barrier height ( $\phi _{b}$ ), trap state, bandgap ( $E_{g}$ ), and band alignment information of the metal–ZrO2–metal capacitor have been extracted using internal photoemission (IPE) system. By correlating the IPE analysis with I-V and C-V char
Externí odkaz:
https://doaj.org/article/519aa93d04494911ab18c5356ffa3035
Autor:
Soo Cheol Kang, Hyun-Wook Jung, Sung-Jae Chang, Seung Mo Kim, Sang Kyung Lee, Byoung Hun Lee, Haecheon Kim, Youn-Sub Noh, Sang-Heung Lee, Seong-Il Kim, Ho-Kyun Ahn, Jong-Won Lim
Publikováno v:
Nanomaterials, Vol 10, Iss 11, p 2116 (2020)
An enhancement-mode AlGaN/GaN metal-insulator-semiconductor high-electron- mobility-transistor was fabricated using a recess gate and CF4 plasma treatment to investigate its reliable applicability to high-power devices and circuits. The fluorinated-g
Externí odkaz:
https://doaj.org/article/fe8bc6099d2b4c19bc414e2ed09b6d2e
Autor:
Sung-Jae Chang, Dong-Seok Kim, Tae-Woo Kim, Jung-Hee Lee, Youngho Bae, Hyun-Wook Jung, Soo Cheol Kang, Haecheon Kim, Youn-Sub Noh, Sang-Heung Lee, Seong-Il Kim, Ho-Kyun Ahn, Jong-Won Lim
Publikováno v:
Nanomaterials, Vol 10, Iss 11, p 2175 (2020)
The device performance deterioration mechanism caused by the total ionizing dose effect after the γ-ray irradiation was investigated in GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) for a 5 nm-thick SiN and H
Externí odkaz:
https://doaj.org/article/18e43b84a212499da1141036540960f9
Autor:
Soo Cheol Kang, So Young Kim, Sang Kyung Lee, Kiyung Kim, Billal Allouche, Hyeon Jun Hwang, Byoung Hun Lee
Publikováno v:
Nanomaterials, Vol 10, Iss 6, p 1186 (2020)
The electrical characteristics of Zinc oxide (ZnO) thin-film transistors are analyzed to apprehend the effects of oxygen vacancies after vacuum treatment. The energy level of the oxygen vacancies was found to be located near the conduction band of Zn
Externí odkaz:
https://doaj.org/article/aa707325e2a841a88c3191664614b8df
Autor:
Soyoung Kim, Soo Cheol Kang, Byoung Hun Lee, Sunwoo Heo, Seung-Mo Kim, Yongsu Lee, Tae Jin Yoo, Hyeon Jun Hwang, Ho-In Lee
Publikováno v:
Carbon. 179:627-632
The intrinsic characteristics of novel devices and materials are often misunderstood due to the characterization methods which are developed to analyze existing devices or materials. Even though graphene is a very well-known material, there hasn't be
Autor:
Byoung Hun Lee, Tae Jin Yoo, Ho-In Lee, Soo Cheol Kang, Young Gon Lee, Hyeon Jun Hwang, Hokyung Park, Sunwoo Heo
Publikováno v:
IEEE Journal of the Electron Devices Society. 9:424-428
Barrier height ( $\phi _{b}$ ), trap state, bandgap ( $E_{g}$ ), and band alignment information of the metal–ZrO2–metal capacitor have been extracted using internal photoemission (IPE) system. By correlating the IPE analysis with I-V and C-V char
Autor:
Sung-Jae Chang, Seong-Il Kim, Soo Cheol Kang, Kyu Jun Cho, Jong-Won Lim, Hae Cheon Kim, Hyun-Wook Jung, Sang-Heung Lee, Hokyun Ahn, Youn Sub Noh
Publikováno v:
ECS Transactions. 98:519-526
GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) are intensively investigated for high power, high frequency [1] and aerospace application [2] due to its wide bandgap, high breakdown field, and high carrier densi
Autor:
Donghwan Lim, Soo Cheol Kang, Chang Hwan Choi, Byoung Hun Lee, Sang Kyung Lee, Dong-Seon Lee, Seokjin Kang
Publikováno v:
IEEE Electron Device Letters. 40:1716-1719
The unique degradation behavior of a tunneling field-effect transistor (TFET) under hot-carrier injection (HCI) stress has been previously investigated. However, while the source side (p+/p junction) of degradation (due to HCI stress) has been extens
Publikováno v:
Nanomaterials, Vol 8, Iss 10, p 797 (2018)
The electrical characteristics and operation mechanism of a molybdenum disulfide/black phosphorus (MoS2/BP) heterojunction device are investigated herein. Even though this device showed a high on-off ratio of over 1 × 107, with a lower subthreshold
Externí odkaz:
https://doaj.org/article/2ab9c2da667c4ab7be27027fb17c5a74
Publikováno v:
Solid-State Electronics. 158:46-50
The reliability of a bulk fin field-effect transistor (FinFET) with a high-k dielectric/metal-gate stack has been investigated by comparing the effects of DC and AC stresses. It is well known that the relaxation during the off-cycle of the AC stress