Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Soo Bok Chin"'
Autor:
W. Namkoong, Soo-Bok Chin, Y. Jang, Chulgi Song, Ilsin An, Sung-Muk Lee, Jaisun Kyoung, Jong-Hoi Kim, Tae-Hyuk Ahn
Publikováno v:
Journal of the Korean Physical Society. 53:1650-1654
Zirconium oxide (ZrO2) is suggested as a good candidate for a high-k dielectric. For the storage capacitor in a dynamic random access memory, a multi-stack of ZrO2 and Al2O3 is reported to reduce the leakage current and to secure a high capacitance.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::331223aecd0dc381c7430edc848e1bb5
https://doi.org/10.3938/jkps.53.1650
https://doi.org/10.3938/jkps.53.1650
Autor:
Christine Brown, Gangadharan Sivaraman, Raghav Babulnath, Chang Ho Lee, Minjung Yoon, Satya Kurada, Mingwei Li, Il-suk Park, Dongchul Ihm, Jeong-Ho Ahn, Soo-Bok Chin, Rajiv Galani, Shijin Seong, Hyung-Seop Kim, JaeHyun Kim
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXVIII.
Historically when we used to manufacture semiconductor devices for 45 nm or above design rules, IC manufacturing yield was mainly determined by global random variations and therefore the chip manufacturers / manufacturing team were mainly responsible
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca11839f4948596d3a807fd9f1329bfb
https://doi.org/10.1117/12.2046651
https://doi.org/10.1117/12.2046651
Autor:
Seongchae Choi, Hee-Won Sunwoo, Shijin Seong, Dongchul Ihm, Ho-Kyu Kang, Jun-Bum Lee, Byoung-Ho Lee, Dong-Ryul Lee, Soo-Bok Chin, Jeong-Ho Ahn, Hyung-Seop Kim
Publikováno v:
SPIE Proceedings.
This paper presents a methodology for detecting defects more effectively that have a substantial yield impact on several critical layers using a simulation program, which is considerably helpful in analyzing defects on the wafer. First, this paper pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb212c8f67378c418a62c4651ec699ca
https://doi.org/10.1117/12.2011387
https://doi.org/10.1117/12.2011387
Autor:
Jun-Bum Lee, Byoung-Ho Lee, Arun Lobo, Ho-Kyu Kang, Dong-Ryul Lee, Chang Ho Lee, Soo-Bok Chin, Gangadharan Sivaraman, Jeong-Ho Ahn, Seongchae Choi, Ravikumar Sanapala, Tetsuya Yamamoto, Dongchul Ihm, Rahul Lakhawat
Publikováno v:
SPIE Proceedings.
Development of an advanced design node for NAND flash memory devices in semiconductor manufacturing requires accelerated identification and characterization of yield-limiting defect types at critical front-end of line (FEOL) process steps. This enabl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d50fb5fee9c83719adce09532f9dd48
https://doi.org/10.1117/12.916505
https://doi.org/10.1117/12.916505
Autor:
Peter Ko, Jiyoung Noh, Namki Suk, Jeong-Ho Ahn, Jae Young Park, Timothy A. Johnson, Soo-Bok Chin, Dongchul Ihm, Ho-Kyu Kang, Byoung-Ho Lee
Publikováno v:
SPIE Proceedings.
Distributions of via Depth and bottom CD for TSV wafer have been studied by scanning interference microscopy (Unifire 7900, Nanometrics Inc.). We plotted whole wafer maps for each via depth and bottom CD and found useful relationship between them (i.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::303fbeca3e07e9416700ccd0b9eafe0b
https://doi.org/10.1117/12.917797
https://doi.org/10.1117/12.917797
Autor:
Jaisun Kyoung, Jusang Rhim, Soo-Bok Chin, Hyoungjoo Lee, Ilsin An, Chulgi Song, Sangyouk Lee, Tae-Hyuk Ahn
Publikováno v:
SPIE Proceedings.
Crystal growth and haze formation on photomasks become serious problems in UV lithography. As the wavelength becomes shorter, photons carry more energy, so the chances of having a photochemical reaction become much higher. Pellicle, adhesive, residue
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34723e54306f26f317748baaae941953
https://doi.org/10.1117/12.772151
https://doi.org/10.1117/12.772151
Publikováno v:
SPIE Proceedings.
As the design rules of semiconductor devices have decreased, the detection of critical killer defect has became more important. One of killer defect is under-etch defect caused by insufficient contact etch. Although very low throughput only e-beam in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d51c95dd9b709a8293769a7c5b957e4
https://doi.org/10.1117/12.710746
https://doi.org/10.1117/12.710746
Autor:
Jong Seo Hong, Young-Sun Cho, Soo Bok Chin, Byoung-Ho Lee, Chang Lyong Song, Tae-Yong Lee, Jun Sik Hong
Publikováno v:
SPIE Proceedings.
As the design rule of semiconductor devices shrinks to below 100nm dimensions, the degree of pattern alignment from different process levels has become a crucial factor affecting both process control and induced defect on unit process. Isolated and d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbe8af452fa1077e9fffdbaa1b6a1229
https://doi.org/10.1117/12.656736
https://doi.org/10.1117/12.656736
Autor:
Soo Bok Chin, Do Hyun Cho, Dongchul Ihm, Byoung-Ho Lee, Hyo Cheon Kang, Chang Lyong Song, Jum Bun Lee, Tae-Yong Lee
Publikováno v:
SPIE Proceedings.
The measurement of edge roughness has become a hot issue in the semiconductor industry. Especially the contact roughness is being more critical as design rule shrinks. Major vendors offer a variety of features to measure the edge roughness in their C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7495b53c8f2240b119dc9596aeb9292f
https://doi.org/10.1117/12.597948
https://doi.org/10.1117/12.597948
Autor:
Luca Grella, Chang-Lyong Song, Byoung-Ho Lee, Tae-Yong Lee, Do-Hyun Cho, Jorge P. Fernandez, Domingo Choi, Soo-Bok Chin
Publikováno v:
SPIE Proceedings.
As the design rules of semiconductor devices continue to decrease, the detection of critical killer defects has become more difficult. In this paper, μ-bridge defects are studied. In order to detect special μ-bridges, both direct inspection and sim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5099cd3a29808db7c242d9b136b2422
https://doi.org/10.1117/12.596473
https://doi.org/10.1117/12.596473