Zobrazeno 1 - 10
of 35
pro vyhledávání: '"Sonja Matich"'
Autor:
Gregor Koblmüller, Daniel Ruhstorfer, Markus Döblinger, Lincoln J. Lauhon, Bernhard Loitsch, Sonja Matich, Nari Jeon
Publikováno v:
Nano Letters. 18:5179-5185
Ternary III-V alloys of tunable bandgap are a foundation for engineering advanced optoelectronic devices based on quantum-confined structures including quantum wells, nanowires, and dots. In this context, core-shell nanowires provide useful geometric
Autor:
Bernhard Loitsch, Gerhard Abstreiter, Jonathan J. Finley, Stefanie Morkötter, J. Becker, Jakob Seidl, Dominik M. Irber, Yang Tang, Lincoln J. Lauhon, Damon J. Carrad, Matthew Grayson, Sonja Matich, Markus Döblinger, Gregor Koblmüller, Nari Jeon, Julia Winnerl
Publikováno v:
Nano Letters. 17:4886-4893
Modulation-doped III-V semiconductor nanowire (NW) heterostructures have recently emerged as promising candidates to host high-mobility electron channels for future high-frequency, low-energy transistor technologies. The one-dimensional geometry of N
Autor:
Julia Winnerl, Luca Francaviglia, Martin Hetzl, Martin Stutzmann, Max Kraut, Sonja Matich, Anna Fontcuberta i Morral, Markus Döblinger
Publikováno v:
Nanoscale. 9:7179-7188
The large surface-to-volume ratio of GaN nanowires implicates sensitivity of the optical and electrical properties of the nanowires to their surroundings. The implementation of an (Al, Ga) N shell with a larger band gap around the GaN nanowire core i
Autor:
Thomas Stettner, Paul Schmiedeke, Andreas Thurn, Markus Döblinger, Jochen Bissinger, Sonja Matich, Daniel Ruhstorfer, Hubert Riedl, Jonathan J. Finley, Gregor Koblmueller
Publikováno v:
Conference on Lasers and Electro-Optics.
Autor:
Andreas Thurn, Gregor Koblmüller, Paul Schmiedeke, Jonathan J. Finley, Sonja Matich, Markus Döblinger
Publikováno v:
Applied Physics Letters
Realizing telecom-band lasing in GaAs-based nanowires (NW) with low bandgap gain media has proven to be notoriously difficult due to the high compressive strain built up in the active regions. Here, we demonstrate an advanced coaxial GaAs-InGaAs mult
Autor:
Gregor Koblmüller, Daniel Ruhstorfer, H. Riedl, Markus Döblinger, Sonja Matich, Armin Lang, Jonathan J. Finley
Publikováno v:
Nanotechnology. 32:135604
We report a comprehensive study of the growth dynamics in highly periodic, composition tunable InAsSb nanowire (NW) arrays using catalyst-free selective area molecular beam epitaxy. Employing periodically patterned SiO2-masks on Si (111) with various
Autor:
Ian D. Sharp, Martin Hetzl, Martin Stutzmann, Sijie Hao, Viktoria F. Kunzelmann, Qinglin Sai, Changtai Xia, Sonja Matich
Publikováno v:
Applied Physics Letters. 116:092102
Room temperature sub-gap optical absorption spectra measured by photothermal deflection spectroscopy were investigated for hetero- and homo-epitaxial β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy as well as for a bulk crystal. The a
Autor:
Andreas Thurn, Gregor Koblmüller, Markus Döblinger, Daniel Ruhstorfer, Megan O. Hill, Thomas Stettner, Lincoln J. Lauhon, T. Kostenbader, H. Riedl, Michael Kaniber, Sonja Matich, Jonathan J. Finley, Jochen Bissinger, Paul Schmiedeke
Publikováno v:
Nano letters. 18(10)
Semiconductor nanowire (NW) lasers are attractive as integrated on-chip coherent light sources with strong potential for applications in optical communication and sensing. Realizing lasers from individual bulk-type NWs with emission tunable from the
Autor:
Julia Winnerl, Jürgen Christen, Jonathan J. Finley, Marcus Müller, Sonja Matich, Peter Veit, Gregor Koblmüller, Bernhard Loitsch, F. Bertram
Publikováno v:
Applied Physics Letters
Mapping individual radiative recombination channels at the nanoscale in direct correlation with the underlying crystal structure and composition of III–V semiconductor nanostructures requires unprecedented highly spatially resolved spectroscopy met
Autor:
Thomas Stettner, Bernhard Loitsch, Lincoln J. Lauhon, Sonja Matich, Jonathan J. Finley, Nari Jeon, J. Becker, Yeanitza Trujillo Gottschalk, Christian Pöpsel, Gregor Koblmüller, Alexander W. Holleitner, Marcus Altzschner, Markus Döblinger
Publikováno v:
Nano letters. 18(6)
Core-shell semiconductor nanowires (NW) with internal quantum heterostructures are amongst the most complex nanostructured materials to be explored for assessing the ultimate capabilities of diverse ultrahigh-resolution imaging techniques. To probe t