Zobrazeno 1 - 10
of 71
pro vyhledávání: '"Sonia Conesa-Boj"'
4D‐STEM Nanoscale Strain Analysis in van der Waals Materials: Advancing beyond Planar Configurations
Publikováno v:
Small Science, Vol 4, Iss 3, Pp n/a-n/a (2024)
Achieving nanoscale strain fields mapping in intricate van der Waals (vdW) nanostructures, like twisted flakes and nanorods, presents several challenges due to their complex geometry, small size, and sensitivity limitations. Understanding these strai
Externí odkaz:
https://doaj.org/article/9efe00e046fa4bfba1eb6bedd882520a
Autor:
Hao Zhang, Önder Gül, Sonia Conesa-Boj, Michał P. Nowak, Michael Wimmer, Kun Zuo, Vincent Mourik, Folkert K. de Vries, Jasper van Veen, Michiel W. A. de Moor, Jouri D. S. Bommer, David J. van Woerkom, Diana Car, Sébastien R Plissard, Erik P.A.M. Bakkers, Marina Quintero-Pérez, Maja C. Cassidy, Sebastian Koelling, Srijit Goswami, Kenji Watanabe, Takashi Taniguchi, Leo P. Kouwenhoven
Publikováno v:
Nature Communications, Vol 8, Iss 1, Pp 1-7 (2017)
Disorder has been a prime challenge to study the topological properties in a hybrid system. Here, Zhanget al. report ballistic superconductivity in InSb nanowires interfacing with a NbTiN superconductor, paving the way for disorder-free Majorana devi
Externí odkaz:
https://doaj.org/article/05b40ff9f8e14523bd5d92afecabeadc
Publikováno v:
ACS Physical Chemistry Au, 2(3)
The phenomenon of polytypism, namely unconventional crystal phases displaying a mixture of stacking sequences, represents a powerful handle to design and engineer novel physical properties in two-dimensional (2D) materials. In this work, we character
Publikováno v:
Journal of Physics and Chemistry of Solids. 178:111350
Autor:
Laurien I. Roest, Louis Maduro, Eiji Okunishi, Juan Rojo, Sabrya E. van Heijst, Sonia Conesa-Boj, Hiroki Hashiguchi, Masaki Mukai
Publikováno v:
van Heijst, S E, Mukai, M, Okunishi, E, Hashiguchi, H, Roest, L I, Maduro, L, Rojo, J & Conesa-Boj, S 2021, ' Illuminating the Electronic Properties of WS 2 Polytypism with Electron Microscopy ', Annalen der Physik, vol. 533, no. 3, 2000499, pp. 1-9 . https://doi.org/10.1002/andp.202000499
Annalen der Physik, 533(3)
Annalen der Physik, 533(3):2000499, 1-9. Wiley-VCH Verlag
Annalen der Physik
Annalen der Physik, 533(3)
Annalen der Physik, 533(3):2000499, 1-9. Wiley-VCH Verlag
Annalen der Physik
Tailoring the specific stacking sequences (polytypes) of layered materials represents a powerful strategy to identify and design novel physical properties. While nanostructures built upon transition-metal dichalcogenides (TMDs) with either the 2H or
Publikováno v:
ACS Applied Materials & Interfaces
ACS applied materials & interfaces, 12(13)
ACS applied materials & interfaces, 12(13)
Layered materials (LMs) such as graphene or MoS2 have attracted a great deal of interest recently. These materials offer unique functionalities due to their structural anisotropy characterized by weak van der Waals bonds along the out-of-plane axis a
Publikováno v:
ACS Physical Chemistry Au. 2(3)
The phenomenon of polytypism, namely unconventional crystal phases displaying a mixture of stacking sequences, represents a powerful handle to design and engineer novel physical properties in two-dimensional (2D) materials. In this work, we character
Publikováno v:
Journal of Applied Physics. 132:173103
Recent studies of Transition Metal Dichalcogenides (TMDs) have revealed exciting optical properties like stable excitons and chiral light-matter interactions. Chemical vapor deposition (CVD) techniques provide a platform for the fabrication of nanost
Autor:
Sonia Conesa-Boj
Publikováno v:
Low-Dimensional Materials and Devices 2021.
One of the driving forces of the ongoing nanotechnology revolution is the ever-improving ability to understand and control the properties of quantum matter down to the atomic scale. Key drivers in this revolution are quantum materials, such as the la
Autor:
Laurien I. Roest, Jaco ter Hoeven, Isabel Postmes, Abel Brokkelkamp, Sonia Conesa-Boj, Juan Rojo, Sergiy Krylyuk, Albert V. Davydov
Publikováno v:
Low-Dimensional Materials and Devices 2021.
Indium Selenide (InSe) is a remarkable two-dimensional quantum material whose characteristic properties include a bandgap in the near infrared region that increases with fewer layers. InSe is known to crystallize in either the β-, γ- or the e-phase