Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Sonia Chopra"'
Publikováno v:
International Journal of Hypertension, Vol 2012 (2012)
Background. The aim of present study is to observe the association between the levels of ankle-brachial index (ABI) and cardiovascular risk factors among people with type 2 diabetes mellitus in north India. A cross-sectional study was carried out at
Externí odkaz:
https://doaj.org/article/0f516e33fadc4689bb23142b0a98d5b3
Publikováno v:
Journal of the California Dental Association. 36:769-774
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26772e481ee5d04c690cb51e19936253
https://doi.org/10.1080/19424396.2008.12224235
https://doi.org/10.1080/19424396.2008.12224235
Publikováno v:
International Journal of Electronics. 93:279-289
An analytical model for the post-saturation region including the kink regime of a short channel polycrystalline silicon thin film transistor is presented. Considering the impact ionization mechanism caused by high electric field in the pinch off regi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d73038c882ccca6e53665e6940bceaee
https://doi.org/10.1080/00207210500350612
https://doi.org/10.1080/00207210500350612
Publikováno v:
Thin Solid Films. 504:55-58
In this article, a double gate poly-Si TFT structure is analyzed to study the variation of channel potential profile and threshold voltage with dielectric constant, metal work-function and other device parameters. Green's Function is used to obtain t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06612a15064591f55ad3e463c3836ac2
https://doi.org/10.1016/j.tsf.2005.09.038
https://doi.org/10.1016/j.tsf.2005.09.038
Publikováno v:
Semiconductor Science and Technology. 21:370-377
In this work, a two-dimensional potential distribution formulation/model is presented for double-gate poly-crystalline silicon thin film transistors. The work aims at deriving a potential solution for the threshold voltage estimation of the device un
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1b6cfb8c98a82862da2b0963fde72b1
https://doi.org/10.1088/0268-1242/21/3/028
https://doi.org/10.1088/0268-1242/21/3/028
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 53:2682-2687
An analytical analysis for a poly-crystalline silicon thin-film transistor is presented. The Green's function approach is adopted to solve the two-dimensional Poisson's equation using Neumann's boundary conditions at the silicon-silicon di-oxide inte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::448b8af363c30a21818b2333f8ae137e
https://doi.org/10.1109/tmtt.2005.854206
https://doi.org/10.1109/tmtt.2005.854206
Autor:
Sonia Chopra, R. S. Gupta
Publikováno v:
International Journal of Electronics. 88:127-143
An accurate model for the drain characteristics, transconductance, cut-off frequency and transit time of a short geometry polysilicon thin film transistor (poly-Si TFT) is presented. An accurate threshold voltage and field dependent mobility are the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a28c46c0e86ea69394406d2ce93e5a5
https://doi.org/10.1080/00207210010002041
https://doi.org/10.1080/00207210010002041
Autor:
R. S. Gupta, Sonia Chopra
Publikováno v:
Microelectronic Engineering. 54:263-275
Short channel effects are incorporated to investigate the impact of the channel length on the turn-on characteristics of a polycrystalline silicon thin-film transistor (poly-Si TFT). The developed threshold voltage and field effect mobility are the k
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db81f0364342b441c2e831ce2c1e8851
https://doi.org/10.1016/s0167-9317(00)00412-3
https://doi.org/10.1016/s0167-9317(00)00412-3
Autor:
R. S. Gupta, Sonia Chopra
Publikováno v:
Semiconductor Science and Technology. 15:1065-1070
An analytical model of the above-threshold characteristics of a small-geometry poly-silicon thin film transistor considering the grain boundary effect on the turn-on behaviour is proposed. Small geometry effects are also incorporated to develop an ac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7aa12bc3433cb1abb1feca130ebeda1b
https://doi.org/10.1088/0268-1242/15/11/310
https://doi.org/10.1088/0268-1242/15/11/310
Autor:
Sonia Chopra, R. S. Gupta
Publikováno v:
Semiconductor Science and Technology. 15:197-202
A model that characterizes the subthreshold regime and the threshold voltage of a short-channel polycrystalline silicon thin-film transistor (poly-Si TFT) is developed and supported experimentally. The subthreshold variations with gate and drain volt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::563fe69498d514c997b8f34506144863
https://doi.org/10.1088/0268-1242/15/2/320
https://doi.org/10.1088/0268-1242/15/2/320