Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Songyi Yoo"'
Publikováno v:
Micromachines, Vol 11, Iss 11, p 952 (2020)
A capacitorless one-transistor dynamic random-access memory device that uses a poly-silicon body (poly-Si 1T-DRAM) has been suggested to overcome the scaling limit of conventional one-transistor one-capacitor dynamic random-access memory (1T-1C DRAM)
Externí odkaz:
https://doaj.org/article/7338c06d56d143b59d7829eb7139f435
Publikováno v:
Micromachines, Vol 11, Iss 2, p 228 (2020)
Recently, one-transistor dynamic random-access memory (1T-DRAM) cells having a polysilicon body (poly-Si 1T-DRAM) have attracted attention as candidates to replace conventional one-transistor one-capacitor dynamic random-access memory (1T-1C DRAM). P
Externí odkaz:
https://doaj.org/article/bf091c9032364f0488ed8263e34df201
Publikováno v:
Journal of Nanoscience and Nanotechnology. 21:4216-4222
A capacitorless one-transistor dynamic random-access memory cell with a polysilicon body (poly-Si 1T-DRAM) has a cost-effective fabrication process and allows a three-dimensional stacked architecture that increases the integration density of memory c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8d9325a94e95cbe139020185be7c9d1f
https://doi.org/10.1166/jnn.2021.19389
https://doi.org/10.1166/jnn.2021.19389
Publikováno v:
Electronics
Volume 9
Issue 6
Electronics, Vol 9, Iss 1051, p 1051 (2020)
Volume 9
Issue 6
Electronics, Vol 9, Iss 1051, p 1051 (2020)
Capacitorless one-transistor dynamic random-access memory cells that use a polysilicon body (poly-Si 1T-DRAM) have been studied to overcome the scaling issues of conventional one-transistor one-capacitor dynamic random-access memory (1T-1C DRAM). Gen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::400eccf5d434285fe49aed0a36203e0f
Publikováno v:
Micromachines
Micromachines, Vol 11, Iss 2, p 228 (2020)
Volume 11
Issue 2
Micromachines, Vol 11, Iss 2, p 228 (2020)
Volume 11
Issue 2
Recently, one-transistor dynamic random-access memory (1T-DRAM) cells having a polysilicon body (poly-Si 1T-DRAM) have attracted attention as candidates to replace conventional one-transistor one-capacitor dynamic random-access memory (1T-1C DRAM). P
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bf19a3bc7f8399039fc22bf0c4865a5b
http://europepmc.org/articles/PMC7074760
http://europepmc.org/articles/PMC7074760
Publikováno v:
Environmental Health and Toxicology, Vol 30 (2015)
Objectives There has been a growing concern about the possible carcinogenic effects of the electromagnetic radiofrequency fields emitted from mobile phones. The purpose of this study was to investigate the association between mobile phone use and the
Externí odkaz:
https://doaj.org/article/8322da01d81744e4acb65740638f7c60