Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Songyi Yoo"'
Publikováno v:
Micromachines, Vol 11, Iss 11, p 952 (2020)
A capacitorless one-transistor dynamic random-access memory device that uses a poly-silicon body (poly-Si 1T-DRAM) has been suggested to overcome the scaling limit of conventional one-transistor one-capacitor dynamic random-access memory (1T-1C DRAM)
Externí odkaz:
https://doaj.org/article/7338c06d56d143b59d7829eb7139f435
Publikováno v:
Micromachines, Vol 11, Iss 2, p 228 (2020)
Recently, one-transistor dynamic random-access memory (1T-DRAM) cells having a polysilicon body (poly-Si 1T-DRAM) have attracted attention as candidates to replace conventional one-transistor one-capacitor dynamic random-access memory (1T-1C DRAM). P
Externí odkaz:
https://doaj.org/article/bf091c9032364f0488ed8263e34df201
Publikováno v:
Journal of Nanoscience and Nanotechnology. 21:4216-4222
A capacitorless one-transistor dynamic random-access memory cell with a polysilicon body (poly-Si 1T-DRAM) has a cost-effective fabrication process and allows a three-dimensional stacked architecture that increases the integration density of memory c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8d9325a94e95cbe139020185be7c9d1f
https://doi.org/10.1166/jnn.2021.19389
https://doi.org/10.1166/jnn.2021.19389
Publikováno v:
Electronics
Volume 9
Issue 6
Electronics, Vol 9, Iss 1051, p 1051 (2020)
Volume 9
Issue 6
Electronics, Vol 9, Iss 1051, p 1051 (2020)
Capacitorless one-transistor dynamic random-access memory cells that use a polysilicon body (poly-Si 1T-DRAM) have been studied to overcome the scaling issues of conventional one-transistor one-capacitor dynamic random-access memory (1T-1C DRAM). Gen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::400eccf5d434285fe49aed0a36203e0f
Publikováno v:
Micromachines
Micromachines, Vol 11, Iss 2, p 228 (2020)
Volume 11
Issue 2
Micromachines, Vol 11, Iss 2, p 228 (2020)
Volume 11
Issue 2
Recently, one-transistor dynamic random-access memory (1T-DRAM) cells having a polysilicon body (poly-Si 1T-DRAM) have attracted attention as candidates to replace conventional one-transistor one-capacitor dynamic random-access memory (1T-1C DRAM). P
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bf19a3bc7f8399039fc22bf0c4865a5b
http://europepmc.org/articles/PMC7074760
http://europepmc.org/articles/PMC7074760
Publikováno v:
Micromachines; Nov2020, Vol. 11 Issue 11, p952, 1p
Publikováno v:
Electronics (2079-9292); Jun2020, Vol. 9 Issue 6, p1051, 1p
Publikováno v:
Micromachines; Feb2020, Vol. 11 Issue 2, p228-228, 1p