Zobrazeno 1 - 10
of 144
pro vyhledávání: '"Songrui Zhao"'
Autor:
Liuan Li, Shi Fang, Wei Chen, Yueyue Li, Mohammad Fazel Vafadar, Danhao Wang, Yang Kang, Xin Liu, Yuanmin Luo, Kun Liang, Yiping Dang, Lei Zhao, Songrui Zhao, Zongzhi Yin, Haiding Sun
Publikováno v:
Nano-Micro Letters, Vol 16, Iss 1, Pp 1-16 (2024)
Highlights A novel photoelectrochemical (PEC) photosensor composed of GaN nanowire-on-Si platform demonstrates record-high responsivity of 247.8 mA W−1 with ultra-stable operation characteristics. Strategic internal and external band structure engi
Externí odkaz:
https://doaj.org/article/e4d6620d993c4fd183a2a8251ac178e5
Autor:
Milad Fathabadi, Songrui Zhao
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 12, Pp n/a-n/a (2023)
Abstract Semiconductor p‐n heterojunctions are important building blocks for modern electronic and photonic devices. Further combining semiconductor p‐n heterojunctions with light and electrolyte environment, interesting photoelectrochemical (PEC
Externí odkaz:
https://doaj.org/article/4a5e9fa3836a4f1eb7a448d6035241b5
Autor:
Mohammad Fazel Vafadar, Songrui Zhao
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-7 (2023)
Abstract Surface-emitting (SE) semiconductor lasers have changed our everyday life in various ways such as communication and sensing. Expanding the operation wavelength of SE semiconductor lasers to shorter ultraviolet (UV) wavelength range further b
Externí odkaz:
https://doaj.org/article/d5d820505ff54434bb8051de1beb2e87
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-7 (2022)
Abstract Vertical light-emitting diodes (LEDs) have many advantages such as uniform current injection, excellent scalability of the chip size, and simple packaging process. Hitherto, however, technologically important semiconductor aluminum gallium n
Externí odkaz:
https://doaj.org/article/47be62873eda40ccae100221f8ea4674
Autor:
Sheng Chu, Pengfei Ou, Roksana Tonny Rashid, Pegah Ghamari, Renjie Wang, Hong Nhung Tran, Songrui Zhao, Huiyan Zhang, Jun Song, Zetian Mi
Publikováno v:
iScience, Vol 23, Iss 8, Pp 101390- (2020)
Summary: Photoelectrochemical CO2 reduction into syngas (a mixture of CO and H2) provides a promising route to mitigate greenhouse gas emissions and store intermittent solar energy into value-added chemicals. Design of photoelectrode with high energy
Externí odkaz:
https://doaj.org/article/05629939e6e9440f9e2dd29bd7e009e0
Publikováno v:
Micromachines, Vol 11, Iss 2, p 125 (2020)
In this paper, we discuss the recent progress made in aluminum gallium nitride (AlGaN) nanowire ultraviolet (UV) light-emitting diodes (LEDs). The AlGaN nanowires used for such LED devices are mainly grown by molecular beam epitaxy (MBE) and metalorg
Externí odkaz:
https://doaj.org/article/fc704aeacb88472ebf8b35f10ae7275e
Autor:
Songrui Zhao, Zetian Mi
Publikováno v:
Crystals, Vol 7, Iss 9, p 268 (2017)
p-Type doping represents a key step towards III-nitride (InN, GaN, AlN) optoelectronic devices. In the past, tremendous efforts have been devoted to obtaining high quality p-type III-nitrides, and extraordinary progress has been made in both material
Externí odkaz:
https://doaj.org/article/6f7b087944764df194ed95e79d85984a
Autor:
Mackie, Songrui Zhao. J. M., MacLaughlin, D. E., Bernal, O. O., Ishikawa, J. J., Ohta, Y., Nakatsuji, S.
Muon spin rotation and relaxation experiments in the pyrochlore iridate Eu2Ir2O7 yield a well-defined muon spin precession frequency below the metal-insulator/antiferromagnetic transition temperature TM = 120 K, indicative of long-range commensurate
Externí odkaz:
http://arxiv.org/abs/1104.1213
Publikováno v:
Crystal Growth & Design. 23:3091-3097
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9f0a9b614639b66b6fd193cfd8a5e49
https://doi.org/10.1021/acs.cgd.3c00162
https://doi.org/10.1021/acs.cgd.3c00162
Publikováno v:
ACS Applied Optical Materials. 1:652-659
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e170085541ffba67e52cb4d9df836bf
https://doi.org/10.1021/acsaom.3c00023
https://doi.org/10.1021/acsaom.3c00023