Zobrazeno 1 - 10
of 94
pro vyhledávání: '"Songphol Kanjanachuchai"'
Autor:
Matasit Chikumpa, Zon, Supachok Thainoi, Suwit Kiravittaya, Aniwat Tandaechanurat, Noppadon Nuntawong, Suwat Sopitpan, Visittapong Yordsri, Chanchana Thanachayanont, Songphol Kanjanachuchai, Somchai Ratanathammaphan, Somsak Panyakeow
Publikováno v:
Materials Research Express, Vol 7, Iss 10, p 105007 (2020)
InSb/Al _x ln _1− _x Sb superlattices (SLs) are grown by molecular beam epitaxy on (001) InSb substrate and Raman scattering spectroscopy of the samples under magnetic field is investigated. Al contents in AlInSb of the samples are varied. All samp
Externí odkaz:
https://doaj.org/article/a678b4743904404399136d622781dcaa
Autor:
Chalermchai Himwas, Visittapong Yordsri, Chanchana Thanachayanont, Saharat Chomdech, Wenich Pumee, Somsak Panyakeow, Songphol Kanjanachuchai
Publikováno v:
Nanoscale Advances; 2/7/2024, Vol. 6 Issue 3, p846-854, 9p
Autor:
null Zon, Supachok Thainoi, Suwit Kiravittaya, Noppadon Nuntawong, Suwat Sopitpan, Songphol Kanjanachuchai, Somchai Ratanathammaphan, Somsak Panyakeow
Publikováno v:
Materials Science and Engineering: B. 285:115958
Autor:
Karn Rongrueangkul, Suwat Sopitpan, Aniwat Tandaechanurat, Panithan Srisinsuphya, R. Khanchaitham, Visittapong Yordsri, Chanchana Thanachayanont, Somsak Panyakeow, Songphol Kanjanachuchai, Supachok Thainoi, Suwit Kiravittaya, Noppadon Nuntawong, Somchai Ratanathammaphan
Publikováno v:
Journal of Crystal Growth. 514:36-39
Distinct InSb/InAs quantum nano-stripes possessing type-II band alignment with a broken gap are grown using molecular beam epitaxy with low substrate temperature and slow growth rate, aiming for light emission in a mid-infrared range. The quantum nan
Autor:
Somchai Ratanathammaphan, Chanchana Thanachayanont, R. Chumkaew, Suwat Sopitpan, Somsak Panyakeow, P. Lekwongderm, Songphol Kanjanachuchai, Noppadon Nuntawong, Visittapong Yordsri, Suwit Kiravittaya, Aniwat Tandaechanurat, Supachok Thainoi
Publikováno v:
Journal of Crystal Growth. 512:198-202
We report on the Raman spectroscopy of self-assembled InSb nano-stripes grown on (0 0 1) GaSb substrate by molecular beam epitaxy. The nano-stripes have a truncated pyramidal shape with the typical dimension of ∼150 × 200 × 25 nm3. Raman spectros
Autor:
Aniwat Tandaechanurat, Thanaphat Rakpaises, Somsak Panyakeow, Suwit Kiravittaya, Somchai Ratanathammaphan, Visittapong Yordsri, Nanthaphop Sridumrongsak, Noppadon Nuntawong, Supachok Thainoi, Suwat Sopitpan, C. Chevuntulak, Songphol Kanjanachuchai, Chanchana Thanachayanont
Publikováno v:
Journal of Crystal Growth. 512:159-163
Interdigitated quantum dots, which are multiple stacks of type-I InAs/GaAs quantum dots and type-II GaSb/GaAs quantum dots, are grown using molecular beam epitaxy. By incorporating the interdigitated quantum dots into a p-i-n AlGaAs/GaAs heterojuncti
Autor:
Chanchana Thanachayanont, Somchai Ratanathammaphan, Aniwat Tandaechanurat, Zon, Somsak Panyakeow, Supachok Thainoi, Suwit Kiravittaya, Visittapong Yordsri, Songphol Kanjanachuchai, Noppadon Nuntawong, Suwat Sopitpan
Publikováno v:
Journal of Crystal Growth. 512:136-141
The effects of growth temperature, growth rate and local growth position on the morphology of self-assembled InSb/GaAs quantum dots (QDs) on (0 0 1) Ge substrate are investigated. It is found that for low growth rates, anti-phase domain (APD) boundar
Autor:
Phisut Narabadeesuphakorn, Visittapong Yordsri, Somchai Ratanathammaphan, Suwat Sopitopan, Somsak Panyakeow, Aniwat Tandaechanurat, Noppadon Nuntawong, Chanchana Thanachayanont, Suwit Kiravittaya, Supachok Thainoi, Songphol Kanjanachuchai
Publikováno v:
Journal of Crystal Growth. 487:40-44
Growth of InSb/GaAs quantum nanostructures on GaAs substrate by using molecular beam epitaxy with low growth temperature and slow growth rate typically results in a mixture of isolated and paired nano-stripe structures, which are termed as single and
Autor:
Chanchana Thanachayanont, Songphol Kanjanachuchai, Somsak Panyakeow, Maria Tchernycheva, Visittapong Yordsri, C. Himwas
Publikováno v:
Nanotechnology. 33:095602
We report on the growth, structural, and optical properties of GaAs/GaAsPBi core–shell nanowires (NWs) synthesized by molecular beam epitaxy (MBE). The structure presents advantageous optical properties, in particular, for near- and mid-infrared op