Zobrazeno 1 - 10
of 265
pro vyhledávání: '"Songmuang R"'
Autor:
Buatip, N., Auzelle, T., John, P., Rauwerdink, S., Sohdi, M., Saluan, M., Fernandez, B., Monroy, E., Mornex, D., Bowen, C. R., Songmuang, R.
In this study, detailed analysis of the direct piezo-response of AlN nanowire-based vertically integrated nanogenerators (VINGs) is undertaken as a function of mechanical excitation frequency. We show that the piezo-charge, piezo-voltage, and impedan
Externí odkaz:
http://arxiv.org/abs/2402.09771
Publikováno v:
Nanoscale Research Letters, Vol 1, Iss 1, Pp 1-10 (2006)
AbstractOrdering phenomena related to the self-assembly of InAs quantum dots (QD) grown on GaAs(001) substrates are experimentally investigated on different length scales. On the shortest length-scale studied here, we examine the QD morphology and ob
Externí odkaz:
https://doaj.org/article/0975b1f28b114d5681ad67ecf6c7a672
Publikováno v:
Nanoscale Research Letters, Vol 1, Iss 1, Pp 74-78 (2006)
Abstract We report on the growth and characterization of lateral InAs/GaAs (001) quantum-dot molecules (QDMs) suitable for single QDM optical spectroscopy. The QDMs, forming by depositing InAs on GaAs surfaces with self-assembled nanoholes, are align
Externí odkaz:
https://doaj.org/article/5f575cf092fc41d08e14d66ac2093e89
Autor:
Jaloustre, L., Le-Denmat, S., Auzelle, T., Azadmand, M., Geelhaar, L., Dahlem, F., Songmuang, R.
Piezoelectric semiconductor III-Nitride nanostructures have received increasing interest as an alternative material for energy harvesters, sensors, and self-sustainable electronics, demanding well-clarification of their piezoelectric behavior. Despit
Externí odkaz:
http://arxiv.org/abs/1910.01187
Autor:
Zagonel, L. F., Tizei, L. H. G., Vitiello, G. Z., Jacopin, G., Rigutti, L., Tchernycheva, M., Julien, F. H., Songmuang, R., Ostasevicius, T., de la Peña, F., Ducati, C., Midgley, P. A, Kociak, M.
Publikováno v:
Phys. Rev. B 93, 205410 (2016)
We report on a detailed study of the intensity dependent optical properties of individual GaN/AlN Quantum Disks (QDisks) embedded into GaN nanowires (NW). The structural and optical properties of the QDisks were probed by high spatial resolution cath
Externí odkaz:
http://arxiv.org/abs/1605.07504
We present a set of experimental results identifying various effects that govern the carrier dynamics of self-catalyzed GaAs/AlGaAs core-shell nanowires (NWs) grown by molecular beam epitaxy i.e. surface recombination velocity, surface charge traps,
Externí odkaz:
http://arxiv.org/abs/1511.05401
The Al-Ga intermixing at Al(Ga)N/GaN interfaces in nanowires and the chemical inhomogeneity in AlxGa1-xN/AlN nanodisks (NDs) are attributed to the strain relaxation process. This interpretation is supported by the three-dimensional strain distributio
Externí odkaz:
http://arxiv.org/abs/1409.3683
In this work, we compare the photodetector performance of single defect-free undoped and n-in GaN nanowires (NWs). In vacuum, undoped NWs present a responsivity increment, nonlinearities and persistent photoconductivity effects (~ 100 s). Their unpin
Externí odkaz:
http://arxiv.org/abs/1212.1591
Publikováno v:
Nanotechnology 2012 23 455205
The optical properties of a stack of GaN/AlN quantum discs (QDiscs) in a GaN nanowire have been studied by spatially resolved cathodoluminescence (CL) at the nanoscale (nanoCL) using a Scanning Transmission Electron Microscope (STEM) operating in spe
Externí odkaz:
http://arxiv.org/abs/1209.2545
Diffusion-enhanced and desorption-limited growth regimes of Ga-assisted GaAs nanowires were identified. In the latter regime, the number of vertical NWs with a narrow length distribution was increased by raising the growth temperature. The maximum ax
Externí odkaz:
http://arxiv.org/abs/1206.4274