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pro vyhledávání: '"Songbaek Choe"'
Autor:
Shuichi Nagai, Hiroaki Ueno, Noboru Negoro, Yasuhiro Yamada, Miori Hiraiwa, Masahiro Ishida, Songbaek Choe, Yasufumi Kawai, Osamu Tabata, Go Yamada
Publikováno v:
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
A compact and fast GaN bi-directional switching diode is described, which is integrated with a GaN/Si bi-directional power switch and a Drive-by-Microwave (DBM) isolated gate driver using a microwave wireless power transfer. The fabricated 600V 15A G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bda9fbc7d1994c6d2de2144718f6dbc3
https://doi.org/10.1109/ispsd.2016.7520808
https://doi.org/10.1109/ispsd.2016.7520808
