Zobrazeno 1 - 3
of 3
pro vyhledávání: '"SongJoo LEE"'
Publikováno v:
Journal of Biomechanical Science and Engineering, Vol 16, Iss 2, Pp 21-00068-21-00068 (2021)
As visual stimuli for exercise and cognitive rehabilitation of biomechanics, virtual reality (VR) and augmented reality (AR) devices have getting popularity. In the process of developing the relevant content for VR and AR, there has been a problem th
Externí odkaz:
https://doaj.org/article/d50452aa766547c6bc195f65ac74819c
Autor:
Choong-Ho Lee, Pushkar Ranade, Chenming Hu, Xiaofan Meng, Qiang Lu, Hideki Takeuchi, Weiping Bai, Tsu-Jae King, Songjoo Lee, Dim-Lee Kwong, Xiewen Wang, Yee-Chia Yeo, R. Lin, Hongfa Luan, Tso-Ping Ma, Xin Guo
Publikováno v:
International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).
Mo metal gate p-MOSFETs with several advanced gate dielectrics were fabricated. A suitable p-MOSFET work function was achieved and good device characteristics were obtained in all cases. Thermodynamic stability of Mo on Si/sub 3/N/sub 4/, ZrO/sub 2/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1965a144aeada368aaabfda4dd040853
https://doi.org/10.1109/iedm.2000.904401
https://doi.org/10.1109/iedm.2000.904401
Autor:
Qiang Lu, Lin, R., Ranade, P., Yee Chia Yeo, Xiaofan Meng, Takeuchi, H., Tsu-Jae King, Chenming Hu, Hongfa Luan, Songjoo Lee, Weiping Bai, Choong-Ho Lee, Dim-Lee Kwong, Xin Guo, Xiewen Wang, Tso-Ping Ma
Publikováno v:
International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138); 2000, p641-644, 4p