Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Song-yan Chen"'
Autor:
Jing-Qiu Guo, Song-Yan Chen, Xue-Mei Chen, Jing-Quan Lu, Yu Song, He-Yu Liu, Li-Na Hu, Zheng-Yan Zhu
Publikováno v:
Frontiers in Surgery, Vol 9 (2022)
ObjectiveTo investigate the clinical effect of Multi-focused (MF) laser in the treatment of vulvar lichen sclerosus (VLS).MethodsIn this single-center, randomized controlled trial, we compared the effect of fractionated MF laser with other treatments
Externí odkaz:
https://doaj.org/article/5bae470840ae4351ad8c334cd17c3f3b
Autor:
Chia-Hsun Hsu, Yun-Shao Cho, Wan-Yu Wu, Shui-Yang Lien, Xiao-Ying Zhang, Wen-Zhang Zhu, Sam Zhang, Song-Yan Chen
Publikováno v:
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-10 (2019)
Abstract In this study, aluminum oxide (Al2O3) films were prepared by a spatial atomic layer deposition using deionized water and trimethylaluminum, followed by oxygen (O2), forming gas (FG), or two-step annealing. Minority carrier lifetime of the sa
Externí odkaz:
https://doaj.org/article/dfdf84826a70499da18f8465022c6490
Autor:
Xiao-Ying Zhang, Chia-Hsun Hsu, Shui-Yang Lien, Wan-Yu Wu, Sin-Liang Ou, Song-Yan Chen, Wei Huang, Wen-Zhang Zhu, Fei-Bing Xiong, Sam Zhang
Publikováno v:
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-8 (2019)
Abstract In this work, hafnium oxide (HfO2) thin films are deposited on p-type Si substrates by remote plasma atomic layer deposition on p-type Si at 250 °C, followed by a rapid thermal annealing in nitrogen. Effect of post-annealing temperature on
Externí odkaz:
https://doaj.org/article/7360e0efe40c4405b712f373bf9963ee
Autor:
Xiao-Ying Zhang, Chia-Hsun Hsu, Shui-Yang Lien, Song-Yan Chen, Wei Huang, Chih-Hsiang Yang, Chung-Yuan Kung, Wen-Zhang Zhu, Fei-Bing Xiong, Xian-Guo Meng
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-7 (2017)
Abstract Hafnium oxide (HfO2) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynamic stability with silicon. How
Externí odkaz:
https://doaj.org/article/b777a281e97645849db3cd8e05c1d57b
Autor:
Chia-Hsun Hsu, Shih-Mao Liu, Shui-Yang Lien, Xiao-Ying Zhang, Yun-Shao Cho, Yan-Hua Huang, Sam Zhang, Song-Yan Chen, Wen-Zhang Zhu
Publikováno v:
Nanomaterials, Vol 9, Iss 10, p 1392 (2019)
In this study, needle-like and pyramidal hybrid black silicon structures were prepared by performing metal-assisted chemical etching (MACE) on alkaline-etched silicon wafers. Effects of the MACE time on properties of the black silicon wafers were inv
Externí odkaz:
https://doaj.org/article/5baf6799b79e4fd2b0bb8c51b52cc946
Autor:
Xiao-Ying Zhang, Chia-Hsun Hsu, Yun-Shao Cho, Shui-Yang Lien, Wen-Zhang Zhu, Song-Yan Chen, Wei Huang, Lin-Gui Xie, Lian-Dong Chen, Xu-Yang Zou, Si-Xin Huang
Publikováno v:
Applied Sciences, Vol 7, Iss 12, p 1244 (2017)
Recombination of charge carriers at silicon surfaces is one of the biggest loss mechanisms in crystalline silicon (c-Si) solar cells. Hafnium oxide (HfO2) has attracted much attention as a passivation layer for n-type c-Si because of its positive fix
Externí odkaz:
https://doaj.org/article/ae619f0811704fe482894baee11d8bcb
Autor:
Xueshan Qiu, Yuan Wang, Enhua Wang, Da-Lei Yang, Lian-He Yang, Li Zhang, Na Tang, Lin-Lin Bai, Hong-Tao Xu, Qingchang Li, Xiupeng Zhang, Guiyang Jiang, Song-Yan Chen, Lei Lei, Yi-Wen Zheng
Publikováno v:
Oncotarget
// Yi-Wen Zheng 1, * , Li Zhang 1, * , Yuan Wang 1 , Song-Yan Chen 1 , Lei Lei 1 , Na Tang 1 , Da-Lei Yang 1 , Lin-Lin Bai 1 , Xiu-Peng Zhang 1 , Gui-Yang Jiang 1 , Lian-He Yang 1 , Hong-Tao Xu 1 , Qing-Chang Li 1 , Xue-Shan Qiu 1 and En-Hua Wang 1 1
Autor:
Lin-Gui Xie, Lian-Dong Chen, Wei Huang, Song-Yan Chen, Yun-Shao Cho, Xiao-Ying Zhang, Wen-Zhang Zhu, Xu-Yang Zou, Si-Xin Huang, Chia-Hsun Hsu, Shui-Yang Lien
Publikováno v:
Applied Sciences, Vol 7, Iss 12, p 1244 (2017)
Applied Sciences; Volume 7; Issue 12; Pages: 1244
Applied Sciences; Volume 7; Issue 12; Pages: 1244
Recombination of charge carriers at silicon surfaces is one of the biggest loss mechanisms in crystalline silicon (c-Si) solar cells. Hafnium oxide (HfO2) has attracted much attention as a passivation layer for n-type c-Si because of its positive fix
Autor:
Lin-Lin Bai, Song-Yan Chen, Li Zhang, Hong-Tao Xu, Wei-Nan Li, Hong-Yi Cao, Enhua Wang, Peng Zhang, Yuan Wang, Lian-He Yang
Publikováno v:
Tumor Biology. 36:7061-7067
Thyroid cancer 1 (TC1, C8orf4) plays important roles in many signaling pathways, such as Wnt/β-catenin signaling pathway, and is involved in the development of many cancers. The objective of this study was to examine the expression of TC1 and invest
Autor:
Xiao-Ying, Zhang, Chia-Hsun, Hsu, Shui-Yang, Lien, Song-Yan, Chen, Wei, Huang, Chih-Hsiang, Yang, Chung-Yuan, Kung, Wen-Zhang, Zhu, Fei-Bing, Xiong, Xian-Guo, Meng
Publikováno v:
Nanoscale Research Letters
Hafnium oxide (HfO2) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynamic stability with silicon. However, the