Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Song-Hyeon Kuk"'
Autor:
Bong Ho Kim, Song‐Hyeon Kuk, Seong Kwang Kim, Joon Pyo Kim, Yoon‐Je Suh, Jaeyong Jeong, Chan Jik Lee, Dae‐Myeong Geum, Young Joon Yoon, Sang Hyeon Kim
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 1, Pp n/a-n/a (2024)
Abstract The study demonstrates HfZrOx (HZO)‐based Si ferroelectric field‐effect transistors (FeFETs) with a low operating voltage (1.5 V) and immediate read‐after‐write operation (100 ns) via HZO thickness scaling, electron‐beam‐irradiat
Externí odkaz:
https://doaj.org/article/f9b6aae35a3049e9b8b5aadcc75f6987
Autor:
Bong Ho Kim, Song‐Hyeon Kuk, Seong Kwang Kim, Joon Pyo Kim, Yoon‐Je Suh, Jaeyong Jeong, Dae‐Myeong Geum, Seung‐Hyub Baek, Sang Hyeon Kim
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 5, Pp n/a-n/a (2023)
Abstract The authors demonstrate improved switching voltage, retention, and endurance properties in HfZrOx (HZO)‐based n/p‐ferroelectric field‐effect transistors (FeFETs) via oxygen scavenging. Oxygen scavenging using titanium (Ti) in the gate
Externí odkaz:
https://doaj.org/article/13530e7de0bd4393bcea090cda1c95ab
Autor:
Bong Ho Kim, Song-Hyeon Kuk, Seong Kwang Kim, Joon Pyo Kim, Yoon-Je Suh, Jaeyong Jeong, Dae-Myeong Geum, Seung-Hyub Baek, Sang Hyeon Kim
Publikováno v:
IEEE Transactions on Electron Devices. 70:1996-2000
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2d4f3eb1d757fefee06a53fc739bc28
https://doi.org/10.1109/ted.2023.3244900
https://doi.org/10.1109/ted.2023.3244900
Autor:
Joon Pyo Kim, Seong Kwang Kim, Seohak Park, Song-hyeon Kuk, Taeyoon Kim, Bong Ho Kim, Seong-Hun Ahn, Yong-Hoon Cho, YeonJoo Jeong, Sung-Yool Choi, Sanghyeon Kim
Publikováno v:
Nano Letters. 23:451-461
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7723d8af2b1abdcac9ac041de4f8e013
https://doi.org/10.1021/acs.nanolett.2c03453
https://doi.org/10.1021/acs.nanolett.2c03453
Autor:
Song-Hyeon Kuk, Seungmin Han, Dong Hyun Lee, Bong Ho Kim, Joonsup Shim, Min Hyuk Park, Jae-Hoon Han, Sang-Hyeon Kim
Publikováno v:
IEEE Electron Device Letters. 44:36-39
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a443d28ccb8beeeea0887e321821b3a
https://doi.org/10.1109/led.2022.3219247
https://doi.org/10.1109/led.2022.3219247
Autor:
Bong Ho Kim, Song‐Hyeon Kuk, Seong Kwang Kim, Joon Pyo Kim, Yoon‐Je Suh, Jaeyong Jeong, Dae‐Myeong Geum, Seung‐Hyub Baek, Sang Hyeon Kim
Publikováno v:
Advanced Electronic Materials. 9
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca158cf649cc618887683a577a27fab1
https://doi.org/10.1002/aelm.202201257
https://doi.org/10.1002/aelm.202201257
Publikováno v:
IEEE Transactions on Electron Devices. 69:2080-2087
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd136676b226f035b774a55c4953ad5c
https://doi.org/10.1109/ted.2022.3154687
https://doi.org/10.1109/ted.2022.3154687
Autor:
Bong Ho Kim, Song-hyeon Kuk, Seong Kwang Kim, Joon Pyo Kim, Dae-Myeong Geum, Seung-Hyub Baek, Sang Hyeon Kim
Publikováno v:
Nanoscale Advances. 4:4114-4121
We demonstrate the successful remote oxygen scavenging of HZO-based capacitors, highlighting the significant enhancement of remanent polarization, switching voltage, endurance, and retention.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42054b12433d4263cab31f5cd7492307
https://doi.org/10.1039/d2na00533f
https://doi.org/10.1039/d2na00533f
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::221d62ef7c8724d010a2bb3de9a668c6
https://doi.org/10.1109/iedm19574.2021.9720642
https://doi.org/10.1109/iedm19574.2021.9720642
Autor:
Bong Ho Kim, Song-hyeon Kuk, Seong Kwang Kim, Joon Pyo Kim, Dae-Myeong Geum, Seung-Hyub Baek, Sang Hyeon Kim
Publikováno v:
Nanoscale Advances; 10/7/2022, Vol. 4 Issue 19, p4114-4121, 8p