Zobrazeno 1 - 10
of 82
pro vyhledávání: '"Song Lin Feng"'
Autor:
Song Lin Feng, Le Li, San Nian Song, Lan Lan Shen, Bo Liu, Shi Long Lv, Liang Cai Wu, Ming Qi, Tian Qi Guo, Zhi Tang Song
Publikováno v:
Materials Science Forum. 898:1812-1816
Power consumption has long been a great obstacle in phase change memory technology. Silicon carbide was introduced to be a buffer layer between the phase change material and the metal electrode in this work. The results showed that the new structure
Autor:
Yonghui Zheng, Yan Cheng, Song Lin Feng, Wei Jun Yin, Zhi Tang Song, Weili Liu, Min Zhu, San Nian Song
Publikováno v:
Materials Science Forum. 848:489-493
By using Zr6.5(Sb2Te3)93.5 film, Te nanowires with a diameter of 5 to 30 nm were fabricated through annealing process. The results of the bright field TEM images, selected area electron diffraction (SAED) and high resolution transmission electron mic
Autor:
Shi Long Lv, Le Li, Bo Liu, Zhi Tang Song, Zhonghua Zhang, Yan Cheng, Tian Qi Guo, Lan Lan Shen, San Nian Song, Song Lin Feng, Liang Cai Wu
Publikováno v:
Materials Science Forum. 848:425-429
The performance of phase change memory (PCM) cell, based on Ti0.5Sb2Te3, was significantly improved by using a tantalum dioxide buffer layer. The presence of a buffer layer reduced the reset voltage of the PCM cell. The theoretical thermal simulation
Publikováno v:
Materials Science Forum. 815:44-48
Electron beam (EB) annealing was used to acquire a reasonable and stable component in Si-Sb-Te material. For Si2Sb2Te5phase change material, EB irradiation can induce phase separation and some regions have remained unchanged, which manifests as SixSb
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 319:95-99
Tang Sancai was widely used in the Tang Dynasty, and the study of this pottery provides information about the sociocultural aspects of the Tang people. To understand the characteristics of the different kilns for the production of Tang Sancai, Energy
Publikováno v:
Advanced Materials Research. 873:825-830
In this paper, the two time instability factors in phase change memory, amorphous resistance drift and spontaneous crystallization process, are studied based on Ti2.75(SbxTe)97.25 and Ti6.85(SbxTe)93.15. The drift coefficients of both components are
Publikováno v:
Journal of Applied Physics; Mar2008, Vol. 103 Issue 6, p063723, 5p, 8 Graphs
Publikováno v:
Journal of Applied Physics; 9/15/2004, Vol. 96 Issue 6, p3277-3281, 5p, 1 Diagram, 5 Graphs
Publikováno v:
Japanese Journal of Applied Physics. 47:7239-7242
The transmiss on time and tunneling probability of an electron through a double quantum dot are studied using the transfer matrix technique. The time-dependent Schrodinger equation is applied for a Gaussian wave packet passing through the double quan
Publikováno v:
Chinese Physics B. 17:3054-3057
In the framework of the effective mass theory, this paper calculates the electron energy levels of an InAs/GaAs tyre-shape quantum ring (TSQR) by using the plane wave basis. The results show that the electron energy levels are sensitively dependent o