Zobrazeno 1 - 10
of 281
pro vyhledávání: '"Song, Zhi Gang"'
Publikováno v:
In Surfaces and Interfaces November 2024 54
Enhancing valley splitting in SiGe heterostructures is a crucial task for developing silicon spin qubits. Complex SiGe heterostructures, sharing a common feature of four-monolayer (4ML) Ge layer next to the silicon quantum well (QW), have been comput
Externí odkaz:
http://arxiv.org/abs/2110.10861
Autor:
Chen, Yan-Mei, Hu, Shu-Jian, Lin, Xian-Dan, Tian, Jun-Hua, Lv, Jia-Xin, Wang, Miao-Ruo, Luo, Xiu-Qi, Pei, Yuan-Yuan, Hu, Rui-Xue, Song, Zhi-Gang, Holmes, Edward C., Zhang, Yong-Zhen
Publikováno v:
In Cell 12 October 2023 186(21):4662-4675
We calculate the electronic structures of Germanium nanowires by taking the effective-mass theory. The electron and hole states at the G-valley are studied via the eight-band k.p theory. For the [111] L-valley, we expand the envelope wave function us
Externí odkaz:
http://arxiv.org/abs/1910.10957
Publikováno v:
Phys. Rev. B 98, 165131 (2018)
In this study, two ideal triple degenerate point (TDP) semimetals were predicted, namely, HfIrAs and HfIrBi, that exhibit clean TDPs around the fermi level. At the atomic level, the origin of the TDP was analyzed, and when combined with the low-energ
Externí odkaz:
http://arxiv.org/abs/1808.01163
Publikováno v:
In Materials Science & Engineering A 23 August 2022 851
Topological phase transition in a single material usually refers to transitions between a trivial band insulator and a topological Dirac phase, but the transition may also occur between different classes of topological Dirac phases. However, it is a
Externí odkaz:
http://arxiv.org/abs/1702.05697
Akademický článek
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We demonstrate theoretically that a new system quantum well can realize the topological transition based on the 16-band kp model. Utilizing the strain introduced by the doped impurities, the band anti crossing induced by the doped nitrogen and valenc
Externí odkaz:
http://arxiv.org/abs/1605.07077
Publikováno v:
Scientific Reports 6, 19018 (2016)
The quantum anomalous Hall system with Chern number 2 can be destroyed by sufficiently strong disorder. During its process towards localization, it was found that the electronic states will be directly localized to an Anderson insulator (with Chern n
Externí odkaz:
http://arxiv.org/abs/1509.07609