Strongly-bound excitons and trions in anisotropic 2D semiconductors

Autor: Yoon, Sangho, Kim, Taeho, Seo, Seung-Young, Shin, Seung-Hyun, Song, Su-Beom, Kim, B. J., Watanabe, Kenji, Taniguchi, Takashi, Lee, Gil-Ho, Jo, Moon-Ho, Qiu, Diana Y., Kim, Jonghwan

Publikováno v: Phys. Rev. B 103, 041407 (2021)

Monolayer and few-layer phosphorene are anisotropic quasi-two-dimensional (quasi-2D) van der Waals (vdW) semiconductors with a linear-dichroic light-matter interaction and a widely-tunable direct-band gap in the infrared frequency range. Despite rece

Externí odkaz: http://arxiv.org/abs/2009.13992

Evidence of Higher Order Topology in Multilayer WTe$_2$ from Josephson Coupling through Anisotropic Hinge States

Autor: Choi, Yong-Bin, Xie, Yingming, Chen, Chui-Zhen, Park, Jin-Ho, Song, Su-Beom, Yoon, Jiho, Kim, Bum Joon, Taniguchi, Takashi, Watanabe, Kenji, Lee, Hu-Jong, Kim, Jong-Hwan, Fong, Kin Chung, Ali, Mazhar N., Law, Kam Tuen, Lee, Gil-Ho

The noncentrosymmetric Td-WTe$_2$, previously known as a type-II Weyl semimetal, is expected to have higher order topological phases with topologically protected, helical one-dimensional (1D) hinge states when their scarcely separated Weyl points get

Externí odkaz: http://arxiv.org/abs/1909.02537

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Author Correction: Evidence of higher-order topology in multilayer WTe 2 from Josephson coupling through anisotropic hinge states.

Autor: Choi YB; Department of Physics, Pohang University of Science and Technology, Pohang, Republic of Korea., Xie Y; Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China., Chen CZ; Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China.; Institute for Advanced Study and School of Physical Science and Technology, Soochow University, Suzhou, China., Park J; Department of Physics, Pohang University of Science and Technology, Pohang, Republic of Korea., Song SB; Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea., Yoon J; Max Plank Institute for Microstructure Physics, Halle (Saale), Germany., Kim BJ; Department of Physics, Pohang University of Science and Technology, Pohang, Republic of Korea.; Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang, Republic of Korea., Taniguchi T; Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Ibaraki, Japan., Watanabe K; Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Ibaraki, Japan., Kim J; Department of Physics, Pohang University of Science and Technology, Pohang, Republic of Korea.; Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea., Fong KC; Raytheon BBN Technologies, Quantum Information Processing Group, Cambridge, MA, USA. kc.fong@raytheon.com., Ali MN; Max Plank Institute for Microstructure Physics, Halle (Saale), Germany. maz@berkeley.edu., Law KT; Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China. phlaw@ust.hk., Lee GH; Department of Physics, Pohang University of Science and Technology, Pohang, Republic of Korea. lghman@postech.ac.kr.; Asia Pacific Center for Theoretical Physics, Pohang, Republic of Korea. lghman@postech.ac.kr.

Publikováno v: Nature materials [Nat Mater] 2020 Sep; Vol. 19 (9), pp. 1036.